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Diodes Incorporated DMP31D1UVTQ-13
- Part No.:
- DMP31D1UVTQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMP31D1UVTQ-13.pdf
- Description:
- MOSFET 2P-CH 30V 0.76A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:9,421
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Product details
Overview
DMP31D1UVTQ-13 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in TSOT26 package, rated for -30V VDSS, 1000mΩ RDS(ON) at VGS = -4.5V, and -0.76A continuous drain current at TA = +25°C. It serves as a compact, AEC-Q101-qualified power switch for low-voltage DC-DC converters and backlighting circuits in automotive and portable electronics.
For engineers reviewing the DMP31D1UVTQ-13 datasheet, DMP31D1UVTQ-13 pinout, DMP31D1UVTQ-13 application, or DMP31D1UVTQ-13 equivalent, key selection criteria include its dual-channel P-channel topology, low gate charge (1.0nC at VGS = -4.5V), AEC-Q101 qualification, TSOT26 thermal resistance (143°C/W with copper pad), and guaranteed RDS(ON) performance down to -55°C junction temperature.
Technical Context
This device integrates two independent P-channel MOSFETs sharing no internal connection-each with separate source, drain, and gate terminals. Its gate threshold voltage range (-0.5V to -1.1V) enables reliable turn-on from low-voltage logic (e.g., 1.8V/2.5V GPIO), while low input capacitance (54pF Ciss) supports fast switching in high-frequency buck or load-switch topologies.
The dual configuration allows synchronous operation in half-bridge or dual-load applications without cross-conduction risk. Thermal design leverages the TSOT26's 143°C/W RθJA (with 1-inch² copper pad), and body diode forward voltage (-0.8V to -1.2V at -300mA) supports bidirectional current handling in reverse-polarity protection or OR-ing circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -30V - Withstands up to -30V drain-source voltage before breakdown, suitable for 24V automotive supply rails with margin. |
| RDS(ON) | 1000mΩ @ VGS = -4.5V - Delivers ≤760mW conduction loss at 0.76A, critical for thermally constrained space-limited designs. |
| ID (continuous) | -0.76A @ TA = +25°C - Supports sustained load currents typical of LED drivers and small-signal power switches. |
| Qg | 1.0nC @ VGS = -4.5V - Enables efficient gate drive with low-power controllers; reduces switching losses in 1–2MHz DC-DC converters. |
| Ciss | 54pF - Limits Miller effect and improves noise immunity in high-dV/dt environments like motor control feedback paths. |
| TJ range | -55°C to +150°C - Validated for under-hood automotive use and industrial ambient conditions without derating. |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.9mm × 1.6mm × 0.6mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Q1 | Primary high-side switching node for first MOSFET; connects to input rail in load-switch configuration. |
| 2 (S1) | Source of Q1 | Reference node for Q1; tied to output or ground depending on circuit topology (e.g., high-side switch). |
| 3 (G1) | Gate of Q1 | Control input for Q1; requires negative VGS relative to S1 to turn on; compatible with 1.8V logic when referenced properly. |
| 4 (D2) | Drain of Q2 | Independent drain for second MOSFET; enables dual-load isolation or complementary switching without shared nodes. |
| 5 (S2) | Source of Q2 | Separate source reference for Q2; allows independent biasing-critical for floating load or dual-rail applications. |
| 6 (G2) | Gate of Q2 | Independent gate control for Q2; supports asynchronous or synchronized dual-channel operation with discrete timing. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at low VGS | 1500mΩ @ VGS = -2.5V - Enables direct drive from 2.5V microcontrollers without level-shifting. |
| Fast switching speed | tD(ON) = 3.8ns, tF = 20ns - Reduces transition losses in high-frequency (>500kHz) power stages. |
| AEC-Q101 qualification | Qualified per automotive stress test standard - Validated for use in infotainment, ADAS sensors, and body control modules. |
| Low leakage | IDSS ≤ -1µA @ VDS = -30V - Minimizes standby power loss in always-on systems such as telematics wake-up circuits. |
Applications
| LED Backlight Control | Automotive Load Switch |
|---|---|
Use Scenario: Driving parallel white LED strings in instrument cluster displays with PWM dimming. IC Role / Device Role / Timing Role: Dual-channel P-MOSFET acts as independent current-path switches for red/green/blue LED banks or left/right display zones. Use Value: Low RDS(ON) minimizes voltage drop across each channel, preserving headroom for constant-current regulator compliance; TSOT26 footprint saves board area in tight bezel layouts. | Use Scenario: Powering CAN transceiver and LIN bus interface ICs in gateway ECUs with controlled inrush and fault isolation. IC Role / Device Role / Timing Role: Each MOSFET independently enables/disables power domains, supporting sequential startup and diagnostic-controlled shutdown. Use Value: AEC-Q101 rating ensures reliability over 15-year vehicle lifetime; low gate charge enables fast response to ECU fault signals (<100µs cutoff). |
| Portable DC-DC Converter | Reverse-Polarity Protection |
Use Scenario: Synchronous rectification in 3.3V/5V buck converters for wearables and IoT sensors. IC Role / Device Role / Timing Role: Dual P-MOSFET replaces Schottky diodes in synchronous rectifier stage, with one FET per phase in interleaved topology. Use Value: 1000mΩ RDS(ON) cuts conduction loss by >60% vs. 0.4V diode drop at 0.5A, extending battery life in coin-cell-powered devices. | Use Scenario: Protecting USB-C PD sink ports and PMIC inputs from accidental reverse-connection during field servicing. IC Role / Device Role / Timing Role: One MOSFET placed in series with VBUS path; second used for auxiliary monitoring or redundant protection in dual-input systems. Use Value: Body diode orientation blocks reverse current flow; low VSD (-0.8V) limits forward drop during normal operation, reducing heat generation in compact enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN31D1UVTQ-13 | N-channel counterpart with same RDS(ON) and package; requires high-side gate driver or bootstrap circuitry. | Suitable only where active-low control and ground-referenced switching are acceptable. | Select when layout permits N-channel topology and gate drive complexity is acceptable for higher efficiency at high currents. |
| SI3483DV-T1-GE3 | Higher RDS(ON) (1400mΩ @ -4.5V); lower Qg (0.7nC); same TSOT26 footprint and AEC-Q101 rating. | Better suited for ultra-low-power always-on monitoring circuits where switching frequency exceeds 2MHz. | Prefer when minimizing gate drive energy dominates over conduction loss, e.g., in battery-backed real-time clock supervisors. |
Compared with DMN31D1UVTQ-13 and SI3483DV-T1-GE3, DMP31D1UVTQ-13 delivers the lowest RDS(ON) among TSOT26 dual P-channel MOSFETs, making it optimal for thermally constrained 24V automotive loads below 1A, while maintaining compatibility with legacy 2.5V logic interfaces without external level shifters.
Availability
DMP31D1UVTQ-13 is available at Aetrix Electronics and suitable for automotive infotainment power sequencing, portable medical sensor DC-DC regulation, and industrial HMI LED backlighting requiring stable component supply across multi-year production cycles.
Supply support for DMP31D1UVTQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets.
The DMP31D1UVTQ belongs to Diodes' AEC-Q101-qualified power MOSFET product line, engineered specifically for space-constrained, thermally demanding automotive subsystems requiring robust reverse-polarity protection and low-voltage logic compatibility.
FAQ
What is the maximum safe operating junction temperature for DMP31D1UVTQ-13?
The absolute maximum junction temperature is +150°C, validated per AEC-Q101 stress testing. Operation at this limit requires strict thermal design: PCB layout must include ≥1 inch² 2oz copper pour per device, and ambient temperature must remain ≤+85°C to maintain reliability over automotive service life.
Can DMP31D1UVTQ-13 be used in a single-supply high-side switch configuration?
Yes-each P-channel MOSFET operates as a high-side switch with source tied to VIN and drain to load. Gate must be driven ≤|VGS(th)| below source potential; for reliable turn-on at 3.3V rail, apply ≤1.8V to gate (e.g., using GPIO + resistor divider or dedicated P-ch driver).
Does DMP31D1UVTQ-13 support paralleling both channels for higher current?
No-channels are electrically isolated but share no thermal or electrical coupling compensation. Paralleling increases RDS(ON) mismatch risk due to VGS(th) variation (±0.3V), potentially causing current imbalance >30%. Use a single-channel part rated for higher current instead.
Is the TSOT26 package lead-free and RoHS compliant?
Yes-DMP31D1UVTQ-13 uses matte tin-annealed copper leadframe and green molding compound meeting EU RoHS 2015/863/EU, with bromine <900ppm, chlorine <900ppm (total Br+Cl <1500ppm), and antimony <1000ppm, certified per Diodes' quality definitions.
DMP31D1UVTQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 760mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 1Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 54pF @ 15V
- Power - Max:
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMP31D1UVTQ-13 FAQ
1.How can I place an order for DMP31D1UVTQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP31D1UVTQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP31D1UVTQ-13 reliable?
The price and inventory of DMP31D1UVTQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP31D1UVTQ-13 is usually 5 days.
3.What payment methods are accepted for DMP31D1UVTQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP31D1UVTQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP31D1UVTQ-13?
DMP31D1UVTQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP31D1UVTQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP31D1UVTQ-13?
For technical support, including DMP31D1UVTQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP31D1UVTQ-13 requirements.
6.How does Aetrix verify that DMP31D1UVTQ-13 is sourced from the original manufacturer or authorized distributors?
All DMP31D1UVTQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP31D1UVTQ-13 meets industry standards.
7.What is the process for return or replacement of DMP31D1UVTQ-13?
All DMP31D1UVTQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP31D1UVTQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP31D1UVTQ-13 part is unused and in its original packaging.
Return procedure for DMP31D1UVTQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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