Diodes Incorporated DMP31D7LW-13

Overview

DMP31D7LW-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in SOT323 package, rated for -30V V_DSS, 0.9Ω R_DS(ON) @ V_GS = -10V, and -0.52A continuous drain current at T_A = +25°C. It serves as a low-side load switch or synchronous rectifier in compact DC-DC converters.

For engineers reviewing the DMP31D7LW-13 datasheet, DMP31D7LW-13 pinout, DMP31D7LW-13 application, or DMP31D7LW-13 equivalent, key selection criteria include gate threshold voltage (-2.0V typ), low input capacitance (19pF C_iss), ESD-protected gate, and thermal resistance (424°C/W R_θJA) on FR-4 with minimum pad layout.

Technical Context

This MOSFET uses planar trench-enhanced silicon technology to achieve low R_DS(ON) while maintaining fast switching (t_D(ON) = 30ns, t_F = 31ns) and low gate charge (Q_g = 0.36nC @ V_GS = -4.5V). Its -2.0V typical V_GS(TH) enables direct interface with 3.3V logic controllers without level shifting.

The device integrates an ESD-protected gate structure and exhibits low leakage (I_DSS ≤ -1μA @ V_DS = -24V), low output capacitance (C_oss = 16pF), and stable R_DS(ON) over temperature (±15% variation from -55°C to +150°C).

Key Specifications

Pinout & Package

Package: SOT323 - ultra-compact surface-mount plastic package (2.15mm × 2.10mm × 0.95mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with DMG3415L-7 and AO3415, DMP31D7LW-13 offers optimal balance of ultra-small SOT323 footprint, integrated ESD protection, and sufficient R_DS(ON) for sub-1A loads-making it preferred for space-constrained, cost-sensitive IoT and sensor nodes where gate drive simplicity matters.

Availability

DMP31D7LW-13 is available at Aetrix Electronics and suitable for DC-DC converters, USB power delivery switches, and industrial sensor node power gating requiring stable component supply across automotive-grade extended temperature programs.

Supply support for DMP31D7LW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, JCET, and its own facilities.

DMP31D7LW-13 belongs to Diodes' "PowerMOS" portfolio targeting space-constrained, high-efficiency power management in consumer, computing, and industrial applications-designed specifically for low-voltage logic-compatible load switching.

FAQ

What is the maximum safe operating voltage for DMP31D7LW-13?

The absolute maximum drain-source voltage (V_DSS) is -30V. Operation beyond this rating risks avalanche breakdown and permanent damage. For reliable 24V rail applications, maintain ≤20V transient overshoot using clamping circuits or proper layout practices-verified by the device's -30V BVDSS rating tested at ID = -250μA.

Can DMP31D7LW-13 be driven directly by a 3.3V microcontroller GPIO?

Yes. With a typical gate threshold voltage of -2.0V and guaranteed turn-on at -2.6V, the device fully enhances at 3.3V logic-high (V_GS ≈ -3.3V). No level shifter is needed, though a 10Ω series gate resistor is recommended to dampen ringing and limit peak current during switching.

Does DMP31D7LW-13 include built-in ESD protection?

Yes. The datasheet explicitly states "ESD Protected Gate" and specifies compliance with JESD22-A114 (HBM ≥2kV). This eliminates the need for external gate protection diodes in most applications, provided standard PCB layout rules (short traces, ground plane) are followed.

What is the thermal performance limitation of DMP31D7LW-13 on a standard FR-4 board?

On a 2oz copper FR-4 board with minimum recommended pad layout, R_θJA is 424°C/W. At 0.29W dissipation, junction temperature rise is ~123°C above ambient-limiting usable ambient range to ≤27°C for T_J ≤150°C. For higher ambient, use enhanced copper pours or reduce current to stay within safe SOA limits.