Diodes Incorporated DMP4026LK3-13

Overview

DMP4026LK3 from Diodes Incorporated is a 40V P-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for -40A continuous drain current at V_GS = -10V, with R_DS(ON) of 25mΩ (max), optimized for high-efficiency power management in DC-DC converters and motor control circuits.

For engineers reviewing the DMP4026LK3 datasheet, DMP4026LK3 pinout, DMP4026LK3 application, or DMP4026LK3 equivalent, key selection criteria include its low R_DS(ON) at -4.5V gate drive, 100% UIS-tested ruggedness, thermal resistance of 1.77°C/W (junction-to-case), and RoHS-compliant green packaging for industrial and automotive-qualified designs.

Technical Context

This MOSFET employs a trench-gate process to achieve low on-resistance while maintaining fast switching performance (t_D(ON) = 4.3ns, t_D(OFF) = 71.8ns) and low gate charge (Q_g = 45.8nC at V_GS = -10V). Its body diode exhibits V_SD = -0.7V (typ) at -1A, supporting synchronous rectification.

The device operates across -55°C to +150°C junction temperature range, with R_DS(ON) normalized variation under 1.6× over full temperature range at V_GS = -10V. It is qualified per J-STD-020 Level 3 moisture sensitivity and features matte tin annealed terminals solderable per MIL-STD-202.

Key Specifications

Pinout & Package

Package: TO252 (DPAK), surface-mount, exposed drain pad for thermal conduction. Dimensions per Diodes package outline DS44926 Rev. 3–2, with 5.33mm wide source/drain tab and 6.10mm body length.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with IRF4905PBF and DMT4006LPS-13, DMP4026LK3 delivers superior thermal performance via TO252's exposed drain pad, verified UIS ruggedness for inductive loads, and balanced R_DS(ON)/Q_g for 100–300kHz power stages - making it optimal for compact, high-current industrial power modules.

Availability

DMP4026LK3 is available at Aetrix Electronics and suitable for motor controls, DC-DC converters, and printer equipment requiring stable component supply, long-term lifecycle support, and RoHS-compliant green packaging.

Supply support for DMP4026LK3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The DMP4026LK3 belongs to Diodes' high-current P-channel MOSFET product line, engineered specifically for high-efficiency, thermally constrained power-switching applications including motor drives and synchronous rectification.

FAQ

What is the maximum continuous drain current for DMP4026LK3 at 70°C case temperature?

The datasheet specifies -32A continuous drain current at T_C = +70°C with V_GS = -10V. This derating reflects thermal limitations of the TO252 package when ambient or heatsink conditions restrict junction temperature rise. Operation above this current requires active cooling or pulse-width-limited duty cycles.

Does DMP4026LK3 support logic-level gate drive at 3.3V?

No - the gate threshold voltage range is -0.8V to -1.8V, but R_DS(ON) is not characterized below V_GS = -4.5V. At 3.3V drive (i.e., V_GS ≈ -3.3V), the device remains partially enhanced and exhibits significantly higher on-resistance (>100mΩ), risking thermal runaway. A minimum -4.5V gate drive is required for specified performance.

Is the exposed drain pad electrically isolated from other pins?

No - the exposed drain pad is internally connected to Pin 3 (Drain) and must be soldered to a PCB copper pour tied to the drain net. It serves both electrical conduction and thermal dissipation; isolation would compromise R_θJC and current rating. Thermal vias to inner layers are recommended but must remain on the same net.

What does "100% UIS tested" mean for DMP4026LK3 in practical design?

Each unit undergoes production testing for unclamped inductive switching with L = 0.3mH, yielding guaranteed I_AS = -22.9A and E_AS = 78.7mJ. This means the MOSFET can safely absorb worst-case inductive energy from motor or solenoid turn-off without external clamping, simplifying layout and improving reliability in flyback-prone applications.