Diodes Incorporated DMP4026SFG-7

Overview

DMP4026SFG from Diodes Incorporated is a 40V P-channel enhancement-mode MOSFET in PowerDI3333-8 package, designed for high-efficiency power management with R_DS(ON) = 25 mΩ @ V_GS = −10 V, I_D = −28 A at T_C = +25°C, and 100% production-tested UIS capability. It serves as a synchronous rectifier or load switch in DC-DC converters and motor control circuits.

For engineers reviewing the DMP4026SFG datasheet, DMP4026SFG pinout, DMP4026SFG application, or DMP4026SFG equivalent, key selection criteria include its low R_DS(ON) at −4.5 V gate drive (45 mΩ), fast switching (t_F = 26 ns), robust thermal resistance (R_θJC = 3.8°C/W), and AEC-Q101 readiness for automotive-grade designs.

Technical Context

This P-channel MOSFET operates with a gate threshold voltage (V_GS(TH)) ranging from −0.8 V to −1.8 V and supports full enhancement-mode operation down to −4.5 V gate drive-enabling direct compatibility with 5 V and 3.3 V logic controllers. Its body diode exhibits V_SD = −0.7 V at −1 A, with t_RR = 18.5 ns and Q_RR = 9.5 nC, supporting efficient synchronous rectification.

The device features C_iss = 2275 pF, C_oss = 215 pF, and Cr_ss = 197 pF at V_DS = −20 V, enabling predictable gate drive design. Total gate charge is 48 nC at V_GS = −10 V and 25 nC at V_GS = −4.5 V, balancing switching speed and drive loss in high-frequency buck or half-bridge topologies.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 - thermally enhanced 8-pin surface-mount package with exposed drain pad for low R_θJC, UL 94V-0 molded compound, and matte tin annealed terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with DMT4007LPS-13 and SI7157DP-T1-GE3, DMP4026SFG delivers optimal balance of 40 V rating, 25 mΩ R_DS(ON), and 3.8°C/W R_θJC in a compact 3.3 mm × 3.3 mm footprint-making it preferred for space- and thermally constrained 12–24 V automotive and industrial power stages.

Availability

DMP4026SFG is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, backlighting, and printer equipment requiring stable component supply across automotive, industrial, and consumer electronics programs.

Supply support for DMP4026SFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers and manufacturing facilities across Asia and the Americas.

DMP4026SFG belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-reliability power switching in automotive, industrial, and computing applications where thermal density and gate drive simplicity are critical.

FAQ

What is the maximum safe operating junction temperature for DMP4026SFG?

The DMP4026SFG has an absolute maximum junction temperature (T_J) of +150°C per its datasheet. Operation at this limit requires strict thermal design: the R_θJC of 3.8°C/W mandates a case temperature no higher than +112°C to maintain 150°C junction under worst-case conditions. Derating curves in Figure 12 confirm 22 A continuous current at T_C = +70°C.

Does DMP4026SFG meet AEC-Q101 qualification standards?

While DMP4026SFG is manufactured in IATF 16949-certified facilities and supports PPAP documentation, it is not formally AEC-Q101 qualified per the published test report. Diodes states that "for automotive applications requiring specific change control… please contact us"-indicating qualification status must be confirmed per part number revision and lot traceability before automotive deployment.

Can DMP4026SFG replace an N-channel MOSFET in high-side switching configurations?

No-DMP4026SFG is a P-channel device intended for high-side switching where gate drive relative to source is negative. Replacing an N-channel high-side switch would require redesigning the gate driver to provide −10 V referenced to source, not ground. Its architecture does not support bootstrap or charge-pump gate drive schemes typical of N-channel high-side use.

What is the recommended PCB layout for thermal performance?

Per Diodes' PowerDI3333-8 outline, the exposed drain pad (pins 1–8) must be connected to ≥100 mm² of 2 oz copper on the bottom layer, with ≥4 thermal vias (0.3 mm diameter) to inner/ground planes. The suggested pad layout (Document DS44884, page 6) specifies X3 = 2.37 mm and Y3 = 3.70 mm for the drain pad, ensuring full solder coverage and minimizing R_θJA to 48°C/W.