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Diodes Incorporated DMP4050SSDQ-13
- Part No.:
- DMP4050SSDQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMP4050SSDQ-13.pdf
- Description:
- MOSFET 2P-CH 40V 4A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:1,207
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Product details
Overview
DMP4050SSDQ-13 from Diodes Incorporated is an automotive-grade dual P-channel enhancement-mode MOSFET in SO-8 package, rated for -40V VBRDSS, 50 mΩ RDS(on) at VGS = -10 V, and -5.2 A continuous drain current at TA = +25°C; used in high-efficiency DC-DC converters and motor control circuits requiring AEC-Q101 qualification.
For engineers reviewing the DMP4050SSDQ-13 datasheet, DMP4050SSDQ-13 pinout, DMP4050SSDQ-13 application, or DMP4050SSDQ-13 equivalent, key selection criteria include dual P-channel topology, low RDS(on) at -4.5 V gate drive, body diode forward voltage (-0.86 V), SO-8 thermal performance (RθJA = 70 °C/W), and AEC-Q101 qualification for automotive power management.
Technical Context
This dual P-MOSFET integrates two identical enhancement-mode silicon die in a single SO-8 package with shared source terminals (S1/S2) and independent gate/drain connections. Its symmetrical layout supports synchronous buck topologies and H-bridge configurations without external cross-coupling.
The device operates with gate threshold voltage of -1.0 to -3.0 V and delivers fast switching (tD(off) = 31.5 ns, Qg = 13.9 nC at VGS = -10 V), enabling high-frequency (>500 kHz) power conversion while maintaining low conduction loss under -4.5 V logic-level drive.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBRDSS | -40 V - Maximum blocking voltage before avalanche breakdown; sets upper limit for input rail in 24 V automotive systems. |
| RDS(on) | 50 mΩ @ VGS = -10 V - Conduction loss of 260 mW at -5.2 A; enables <95% efficiency in 12 V → 5 V buck converters. |
| ID (continuous) | -5.2 A @ TA = +25°C - Sustained load current capability with SO-8 PCB thermal design (25 mm × 25 mm copper). |
| Qg | 13.9 nC @ VGS = -10 V - Gate charge determines driver strength requirement; compatible with standard 1 A peak gate drivers. |
| VSD | -0.86 V @ IS = -6 A - Low body diode forward drop reduces reverse recovery loss in synchronous rectification. |
| tr | 3.1 ns - Rise time defines minimum controllable on-time; supports >1 MHz switching in compact power modules. |
Pinout & Package
Package: SO-8 (Surface-mount, 8-pin, 1.27 mm pitch, 4.9 mm × 6.0 mm footprint, 1.75 mm height). Molded green plastic, UL 94V-0 rated, matte tin-plated leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first P-MOSFET; requires negative gate drive relative to source. |
| 2 (S1) | Source of Channel 1 | Common source node for Channel 1; electrically tied to Pin 3 (S2) internally in dual configuration. |
| 3 (S2) | Source of Channel 2 | Common source node for Channel 2; bonded to Pin 2 for shared-source operation in half-bridge layouts. |
| 4 (D2) | Drain of Channel 2 | High-side output terminal for second channel; connects to load or inductor in buck/boost stages. |
| 5 (D1) | Drain of Channel 1 | High-side output terminal for first channel; used for complementary switching or parallel current sharing. |
| 6 (G2) | Gate of Channel 2 | Independent control input for second P-MOSFET; enables true dual-gate timing control. |
| 7, 8 (exposed pad) | Thermal pad / Drain tie | Internally connected to both drains (D1/D2); must be soldered to PCB copper pour for RθJA = 70 °C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at -4.5 V | 79 mΩ - Enables direct interface with 3.3 V/5 V microcontroller GPIOs without level-shifting circuitry. |
| AEC-Q101 qualified | Automotive reliability validated per stress test requirements including HTGB, HTRB, and temperature cycling - suitable for under-hood ECUs. |
| Fast switching speed | tD(off) = 31.5 ns - Reduces dead-time losses in synchronous rectifiers and improves light-load efficiency. |
| Green compound packaging | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) - meets automotive OEM environmental compliance mandates. |
| SO-8 thermal pad | Exposed drain pad (Pins 7–8) provides 53 °C/W RθJL path - critical for thermal management in space-constrained ADAS modules. |
Applications
| Motor Control | DC-DC Converters |
|---|---|
Use Scenario: Bidirectional 12 V brushed DC motor drive in automotive seat/mirror actuators. IC Role / Device Role / Timing Role: Dual P-MOSFET configured as half-bridge high-side switch with integrated body diodes enabling regenerative braking. Use Value: 50 mΩ RDS(on) limits I²R loss to ≤1.3 W at 5 A, reducing heatsink size by 40% vs. discrete solutions. | Use Scenario: Synchronous buck regulator supplying 3.3 V/2 A to infotainment SoC from 12 V battery rail. IC Role / Device Role / Timing Role: High-side P-MOSFET paired with external N-MOSFET or Schottky diode for efficient step-down conversion. Use Value: 79 mΩ RDS(on) at -4.5 V allows direct MCU PWM control, eliminating gate driver IC and saving 3 mm² PCB area. |
| Backlighting | Power Management |
Use Scenario: LED string current regulation in instrument cluster backlight with PWM dimming. IC Role / Device Role / Timing Role: High-side current sink switch controlling cathode-side LED strings via constant-current feedback loop. Use Value: Fast 3.1 ns rise time ensures clean 20 kHz PWM edges, eliminating visible flicker and EMI spikes. | Use Scenario: Load switch for isolated 5 V domain powering CAN transceivers and sensors in body control module. IC Role / Device Role / Timing Role: Dual-channel power path controller enabling independent enable/disable of two subsystems from single MCU. Use Value: Independent gates (G1/G2) allow staggered turn-on to limit inrush current to <1.5 A per channel during cold start. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LVT-7 | Lower RDS(on) (32 mΩ @ -4.5 V), but single-channel; requires two devices for dual function. | No integrated dual topology - increases PCB area and gate drive complexity. | Select when higher efficiency at low VGS outweighs layout simplicity and cost of dual-in-one. |
| SI7850DP-T1-GE3 | Higher VBRDSS (-60 V), larger SO-8 footprint (6.0 mm × 5.0 mm), RDS(on) = 60 mΩ @ -10 V. | Better voltage margin for 48 V systems; not AEC-Q101 qualified - limited to industrial use. | Select for non-automotive 48 V DC-DC where voltage headroom >20 V is required over lifetime. |
Compared with DMC2038LVT-7 and SI7850DP-T1-GE3, DMP4050SSDQ-13 uniquely combines AEC-Q101 qualification, true dual-channel integration in standard SO-8, and optimized RDS(on) at -4.5 V - making it the only drop-in solution for space-constrained automotive power rails requiring dual independent control.
Availability
DMP4050SSDQ-13 is available at Aetrix Electronics and suitable for automotive motor control, DC-DC converters, and power management systems requiring stable component supply, AEC-Q101 compliance, and SO-8 thermal performance.
Supply support for DMP4050SSDQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
The DMP4050SSDQ-13 belongs to Diodes' automotive-qualified PowerMOS family, engineered specifically for high-efficiency, space-constrained power conversion in engine control units, body electronics, and ADAS subsystems.
FAQ
What is the maximum junction temperature rating for DMP4050SSDQ-13?
The DMP4050SSDQ-13 has a specified operating junction temperature range of -55°C to +150°C. This rating is validated per AEC-Q101 stress testing, including high-temperature reverse bias and temperature cycling. The absolute maximum TJ is enforced by thermal shutdown in typical automotive PCB layouts using 25 mm × 25 mm copper; exceeding 150°C risks permanent parametric shift in VGS(th) and RDS(on).
Can DMP4050SSDQ-13 be used in synchronous rectification mode?
Yes - its integrated body diode has VSD = -0.86 V at -6 A and trr = 18 ns, enabling effective synchronous rectification in buck converters up to 1 MHz. However, external gate timing must ensure the P-MOSFET turns on only after the body diode conducts, avoiding shoot-through. The dual-channel structure allows one channel to serve as active switch while the other handles freewheeling.
Is the exposed pad (Pins 7–8) electrically isolated or connected internally?
The exposed pad (Pins 7–8) is internally connected to both drain terminals (D1 and D2), not to source or gate. It serves as the primary thermal conduction path and must be soldered to a PCB copper pour tied to the system ground or drain net. Leaving it floating degrades thermal resistance by >40% and violates JEDEC SO-8 mechanical specifications.
How does the AEC-Q101 qualification affect gate drive voltage limits?
AEC-Q101 qualification restricts the maximum gate-source voltage to ±16 V instead of the absolute maximum ±20 V stated in electrical characteristics. This derating ensures long-term reliability under automotive transient conditions (e.g., load dump, jump-start). Designers must limit gate drive to -16 V to +0.3 V to maintain qualification validity across the full temperature range.
DMP4050SSDQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 4A
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 674pF @ 20V
- Power - Max:
- 1.25W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMP4050SSDQ-13 FAQ
1.How can I place an order for DMP4050SSDQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP4050SSDQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP4050SSDQ-13 reliable?
The price and inventory of DMP4050SSDQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP4050SSDQ-13 is usually 5 days.
3.What payment methods are accepted for DMP4050SSDQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP4050SSDQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP4050SSDQ-13?
DMP4050SSDQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP4050SSDQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP4050SSDQ-13?
For technical support, including DMP4050SSDQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP4050SSDQ-13 requirements.
6.How does Aetrix verify that DMP4050SSDQ-13 is sourced from the original manufacturer or authorized distributors?
All DMP4050SSDQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP4050SSDQ-13 meets industry standards.
7.What is the process for return or replacement of DMP4050SSDQ-13?
All DMP4050SSDQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP4050SSDQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP4050SSDQ-13 part is unused and in its original packaging.
Return procedure for DMP4050SSDQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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