Diodes Incorporated DMP45H4D9HJ3

Overview

DMP45H4D9HJ3 from Diodes Incorporated is a 450V P-channel enhancement-mode MOSFET in TO251 (Type TH) package, rated for -4.6A continuous drain current at TC = +25°C, with R_DS(ON) = 4.9Ω @ V_GS = -10V and BVDSS = -450V. It delivers low input capacitance (C_iss = 547pF), high avalanche energy (E_AS = 187mJ), and operates across -55°C to +150°C junction temperature range - deployed in DC-DC converters and motor control stages requiring robust high-voltage switching.

For engineers reviewing the DMP45H4D9HJ3 datasheet, DMP45H4D9HJ3 pinout, DMP45H4D9HJ3 application, or DMP45H4D9HJ3 equivalent, key selection criteria include verified -450V blocking capability, thermal resistance R_θJC = 1.2°C/W, gate threshold voltage V_GS(TH) = -3.0 to -5.0V, body diode recovery time t_RR = 164ns, and RoHS-compliant lead-free finish on matte tin annealed terminals.

Technical Context

This P-channel MOSFET uses planar silicon process technology optimized for high-voltage power switching with controlled charge characteristics: Q_g = 13.7nC and Q_gd/Q_gs ratio of ~1.77 supports stable hard-switching operation under high dV/dt conditions (50V/ns peak diode recovery dv/dt). Its negative gate threshold ensures reliable turn-off biasing in high-side configurations without active gate pull-up.

The device integrates a low-leakage body diode (I_S = -3.0A max, V_SD = -1.3V @ I_S = -2.1A) and exhibits normalized R_DS(ON) drift of ≤2× over -55°C to +150°C, enabling predictable conduction loss in thermally constrained industrial power supplies and UPS inverters.

Key Specifications

Pinout & Package

Package: TO251 (Type TH), surface-mount variant of TO-251 with three leads (G, D, S), molded green plastic housing (UL 94V-0), 0.33g mass, and matte tin annealed copper leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage P-channel MOSFET applications.

Compared with DMT45H4D9HJ3, the DMP45H4D9HJ3 offers superior thermal performance in heatsink-mounted configurations due to lower R_θJC (1.2°C/W vs. 1.5°C/W typical for TO252), while IXTP45P045P fails basic voltage qualification for 400V DC bus use and is not a functional substitute.

Availability

DMP45H4D9HJ3 is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and uninterruptible power supply systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for DMP45H4D9HJ3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMP45H4D9HJ3 belongs to Diodes' high-voltage power MOSFET product line, engineered specifically for industrial and telecom power conversion where reliability under repetitive avalanche stress and stable parametric performance across wide temperature ranges are mandatory.

FAQ

What is the maximum safe operating voltage for DMP45H4D9HJ3?

The absolute maximum drain-source voltage (BVDSS) is -450V, tested per JEDEC JESD24-10 with ID = -250µA at VGS = 0V. Operation above this rating risks irreversible avalanche breakdown. Derating to ≤-405V (90% of rating) is recommended for long-term reliability in 400V DC bus applications with transient margins.

Can DMP45H4D9HJ3 be used in zero-voltage switching (ZVS) topologies?

Yes - its low Crss (3.1pF) and controlled Qgd/Qgs ratio support ZVS implementation in phase-shifted full-bridge or LLC resonant converters. The 164ns body diode tRR and low Qrr (1.3nC) minimize dead-time losses, but gate drive must ensure VGS remains below threshold during resonant transitions to avoid shoot-through.

Is DMP45H4D9HJ3 qualified for automotive applications?

No - the datasheet explicitly states that automotive qualification (AEC-Q101) requires separate change-controlled part numbers and PPAP documentation. DMP45H4D9HJ3 is rated for industrial temperature range (-55°C to +150°C) but lacks AEC-Q101 stress test reports, IATF 16949 manufacturing certification statements, or automotive-specific reliability data.

What is the recommended gate resistor value for 100kHz switching?

A 10Ω gate resistor is recommended for 100kHz operation with ±12V drive, balancing switching speed (tD(ON) ≈ 19ns, tF ≈ 31ns) and EMI suppression. Lower values increase dv/dt stress and risk oscillation; higher values extend turn-off time and raise switching losses - verify with actual layout parasitics using the provided Qg = 13.7nC and gate drive voltage swing.