My Inquiry
My Account
Diodes Incorporated DMP56D0UV-7
- Part No.:
- DMP56D0UV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMP56D0UV-7.pdf
- Description:
- MOSFET 2P-CH 50V 0.16A SOT563
- Quantity:
- Payment:
- Shipping:
Inventory:4,431
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMP56D0UV-7 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in SOT563 package, rated for -50V VDSS, 6Ω RDS(ON) @ VGS = -4V, and -160mA continuous drain current at +25°C - optimized for compact DC-DC converters and battery-powered load switching.
For engineers reviewing the DMP56D0UV-7 datasheet, DMP56D0UV-7 pinout, DMP56D0UV-7 application, or DMP56D0UV-7 equivalent, key selection criteria include dual-channel P-MOSFET topology, low gate charge (0.58 nC), ESD-protected gate, thermal resistance of 313°C/W, and SOT563 footprint compatibility with space-constrained portable designs.
Technical Context
This dual P-channel MOSFET integrates two independent enhancement-mode transistors sharing no internal connection - each channel features identical -50V breakdown voltage, gate threshold range (-0.5V to -1.2V), and matched on-resistance characteristics across temperature. The device uses a standard silicon process with matte tin-plated copper leadframe.
Its low input capacitance (Ciss = 50.54 pF) and fast switching times (tD(on) = 4.46 ns, tf = 15.0 ns) support high-frequency operation in synchronous buck topologies and bidirectional power path control, while the -55°C to +150°C operating range enables use in industrial and automotive ambient environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -50 V - supports rail-to-rail operation up to 50V negative supply without avalanche conduction |
| RDS(ON) | 6 Ω @ VGS = -4V - enables <100 mW conduction loss at 100 mA load in portable systems |
| ID (cont.) | -160 mA @ TA = +25°C - defines maximum steady-state load current per channel on FR-4 PCB |
| Qg | 0.58 nC - reduces gate drive power and enables efficient 1–2 MHz switching in DC-DC controllers |
| RθJA | 313 °C/W - requires minimal copper area (per Diodes' recommended pad layout) for thermal management |
| Ciss | 50.54 pF - limits Miller effect and improves noise immunity in high-dV/dt environments |
| VGS(TH) | -0.5 to -1.2 V - ensures reliable turn-on with low-voltage logic-level gate drivers (e.g., 3.3V MCU outputs) |
Pinout & Package
Package: SOT563 - ultra-compact 6-pin surface-mount package with 0.5 mm pitch, 1.6 mm × 1.6 mm body, and 0.2 mm typical lead length; RoHS-compliant, halogen-free, and moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Common return node for first P-MOSFET; tied to local ground or negative rail in high-side switch configuration |
| D1 | Drain of Channel 1 | Switched output node for Channel 1; connects to load or inductor in DC-DC stage |
| G1 | Gate of Channel 1 | Logic-controlled input; requires negative voltage relative to S1 to turn on (e.g., MCU GPIO pulled low) |
| S2 | Source of Channel 2 | Independent source terminal; allows separate biasing or floating operation of second channel |
| D2 | Drain of Channel 2 | Second switched output; supports dual-load control or complementary switching in H-bridge pre-driver |
| G2 | Gate of Channel 2 | Isolated gate input; enables independent timing control for sequencing or redundancy applications |
Key Features
| Feature | Design Value |
|---|---|
| ESD-protected gate | Withstands >2 kV HBM per JEDEC JS-001 - eliminates need for external gate protection in handheld PCB layouts |
| Low RDS(ON) at low VGS | 8 Ω @ VGS = -2.5V - enables direct drive from 2.5V/3.3V logic without level-shifting circuitry |
| Ultra-low Ciss | 50.54 pF - minimizes gate drive current demand and dynamic losses in high-frequency PWM |
| Fast switching speed | tf = 15.0 ns - supports clean edge transitions in battery fuel gauge monitoring and power-path arbitration |
| Green packaging | Halogen- and antimony-free molding compound (Br+Cl <1500 ppm, Sb <1000 ppm) - meets IPC-1752A Class 2 reporting requirements |
Applications
| DC-DC Converter Power Stage | Battery Protection Circuit |
|---|---|
|
Use Scenario: Synchronous buck converter in wearable health monitors requiring regulated 3.3V from single-cell Li-ion (2.7–4.2V). IC Role / Device Role: Dual P-MOSFET used as high-side and low-side switches in discrete synchronous rectification stage. Use Value: 6Ω RDS(ON) at -4V gate drive reduces conduction loss by ~35% vs. comparable SOT-23-6 devices, extending runtime by 8–12 minutes per charge cycle. |
Use Scenario: Reverse-current blocking and over-discharge cutoff in Bluetooth earbud charging case. IC Role / Device Role: Independent channel control enables simultaneous battery isolation and load disconnect during fault conditions. Use Value: Matched VGS(TH) tolerance (-0.5V to -1.2V) ensures consistent turn-on behavior across channels, eliminating unbalanced current sharing in dual-battery configurations. |
| USB-C Power Path Switch | Industrial Sensor Node Power Gating |
|
Use Scenario: Bidirectional 5V power path management between USB-C port and system PMIC in portable test equipment. IC Role / Device Role: One channel controls upstream VBUS sourcing; the other manages downstream VBUS sinking under PD contract negotiation. Use Value: Low Qg (0.58 nC) and fast tD(off) (21.9 ns) enable sub-10 µs power path reconfiguration during USB PD role swaps. |
Use Scenario: Periodic wake-up and sensor activation in LoRaWAN environmental node powered by primary lithium thionyl chloride cell. IC Role / Device Role: High-side switch isolating microcontroller and RF transceiver from main battery during deep sleep (100 nA quiescent current). Use Value: 313°C/W RθJA allows full -160 mA load capability with only 25 mm² of 1-oz copper, fitting within 12 mm × 12 mm PCB area budget. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG6968UVT-7 | Lower RDS(ON) (3.5Ω @ -4.5V) but higher Qg (1.2 nC); same SOT563 package | Better efficiency above 200 mA, but slower switching and higher gate drive loss at 1–2 MHz | Prefer for high-current, low-frequency power rails where thermal margin exceeds 400 mW |
| AO6401 | Higher VDSS (-60V), larger SO-8 package, RDS(ON) = 75 mΩ @ -4.5V - not pin-compatible | Supports higher bus voltages and higher current (4.5A), but occupies 5× more board area | Select only when design requires >50V rating or >500 mA per channel; not suitable for space-constrained layouts |
Compared with DMG6968UVT-7 and AO6401, DMP56D0UV-7 delivers optimal balance of low gate charge, moderate RDS(ON), and ultra-small footprint - making it uniquely suited for sub-200 mA, high-density, battery-operated systems where thermal and layout constraints dominate.
Availability
DMP56D0UV-7 is available at Aetrix Electronics and suitable for DC-DC converters, battery protection circuits, and USB-C power path switching requiring stable component supply and long-term production continuity.
Supply support for DMP56D0UV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
DMP56D0UV-7 belongs to Diodes' "PowerMOS" portfolio - engineered specifically for energy-efficient, space-constrained power management in portable and IoT edge devices, emphasizing low gate charge, robust ESD performance, and green packaging compliance.
FAQ
What is the maximum pulsed drain current rating for DMP56D0UV-7?
The DMP56D0UV-7 supports -700 mA pulsed drain current (IDM) under 10 µs pulse width and 1% duty cycle conditions. This rating assumes proper PCB thermal relief and applies per channel independently. Exceeding this value risks localized junction overheating even if average power remains within 400 mW limit.
Can DMP56D0UV-7 be used in linear regulator pass transistor applications?
No - DMP56D0UV-7 is not characterized or guaranteed for linear mode operation. Its Safe Operating Area (SOA) is not specified beyond switching conditions, and its RDS(ON) variation with temperature (±20% from -55°C to +150°C) makes stable biasing impractical. It is intended exclusively for switching applications.
Is the SOT563 package of DMP56D0UV-7 compatible with standard reflow profiles?
Yes - the SOT563 package meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 and is qualified for standard Pb-free reflow profiles (peak temperature ≤260°C, time above 217°C ≤60 seconds). No pre-bake is required before assembly, provided storage humidity remains below 30% RH.
Does DMP56D0UV-7 include integrated body diodes, and what is their forward voltage?
Yes - each channel includes an inherent P-channel body diode (source-to-drain). At -100 mA forward current and TA = +25°C, VSD is -0.8 V (typical), with -1.2 V maximum. These diodes support freewheeling in inductive loads but are not optimized for high-efficiency synchronous rectification.
DMP56D0UV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 160mA
- Rds On (Max) @ Id, Vgs:
- 6Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.58nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds:
- 50.54pF @ 25V
- Power - Max:
- 400mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMP56D0UV-7 FAQ
1.How can I place an order for DMP56D0UV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP56D0UV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP56D0UV-7 reliable?
The price and inventory of DMP56D0UV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP56D0UV-7 is usually 5 days.
3.What payment methods are accepted for DMP56D0UV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP56D0UV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP56D0UV-7?
DMP56D0UV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP56D0UV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP56D0UV-7?
For technical support, including DMP56D0UV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP56D0UV-7 requirements.
6.How does Aetrix verify that DMP56D0UV-7 is sourced from the original manufacturer or authorized distributors?
All DMP56D0UV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP56D0UV-7 meets industry standards.
7.What is the process for return or replacement of DMP56D0UV-7?
All DMP56D0UV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP56D0UV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP56D0UV-7 part is unused and in its original packaging.
Return procedure for DMP56D0UV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMP56D0UV-7 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
