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Diodes Incorporated DMP57D5UFB-7
- Part No.:
- DMP57D5UFB-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-UFDFN
- Datasheet:
-
DMP57D5UFB-7.pdf
- Description:
- MOSFET P-CH 50V 200MA 3DFN
- Quantity:
- Payment:
- Shipping:
Inventory:8,564
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Product details
Overview
DMP57D5UFB-7 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in a DFN1006-3 package, rated for -50 V VDSS, -200 mA continuous drain current, and 425 mW power dissipation. It features low gate threshold voltage (–0.7 to –1.0 V), RDS(ON) ≤ 6 Ω at VGS = –4.0 V, and AEC-Q101 qualification for automotive-grade reliability. It serves as a load switch or level-shifting high-side switch in compact DC-DC bias rails.
For engineers reviewing the DMP57D5UFB-7 datasheet, DMP57D5UFB-7 pinout, DMP57D5UFB-7 application, or DMP57D5UFB-7 equivalent, key selection criteria include verified RDS(ON) at low VGS, thermal resistance (294 °C/W), ESD protection (1 kV HBM), AEC-Q101 compliance, and DFN1006-3 footprint compatibility with space-constrained PCB layouts.
Technical Context
This MOSFET operates in enhancement mode with a negative gate threshold enabling direct logic-level control from 1.8 V or 2.5 V microcontrollers. Its internal body diode supports reverse-current blocking and flyback energy handling in low-power switching topologies.
The device uses a silicon die mounted in a lead-free, halogen-free molded plastic case (UL 94V-0), with NiPdAu-plated copper terminals optimized for reflow soldering. Thermal performance is characterized on FR-4 PCBs per JESD51-7, with junction-to-ambient resistance of 294 °C/W under standard mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –50 V - Maximum drain-source blocking voltage before avalanche conduction |
| RDS(ON) @ VGS = –4.0 V | ≤ 6 Ω - Ensures <100 mW conduction loss at 100 mA load current |
| VGS(th) | –0.7 to –1.0 V - Enables full turn-on with 1.8 V logic outputs without level shifting |
| ID (continuous) | –200 mA - Suitable for low-current bias rail switching and LED dimming control |
| Ciss | 29 pF - Limits gate drive power and enables fast switching (<100 ns typical ton) |
| ESD Rating | 1 kV HBM - Protects gate oxide during board assembly and handling |
| TJ Range | –55 to +150 °C - Supports operation in under-hood automotive and industrial ambient environments |
Pinout & Package
Package: DFN1006-3 (1.0 × 0.6 mm, 0.4 mm height), bottom-exposed thermal pad, no leads. Molded green compound, UL 94V-0 rated.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Drain) | Main current-carrying terminal (high-side switch node) | Connected to load supply rail; carries full switched current and must be routed with thermal relief |
| Pin 2 (Source) | Reference node for gate control and current return path | Biased to system ground or higher potential; defines VGS reference and impacts body diode orientation |
| Pin 3 (Gate) | Control input for channel conduction | High-impedance node requiring low-capacitance trace routing; protected by integrated 1 kV ESD diode |
Key Features
| Feature | Design Value |
|---|---|
| Low VGS(th) (–0.7 to –1.0 V) | Enables direct drive from 1.8 V I/O without external level shifters or pull-up resistors |
| RDS(ON) ≤ 6 Ω @ –4 V | Reduces conduction loss to <0.6 mW at 100 µA standby current, improving battery runtime |
| AEC-Q101 qualified | Validated for automotive applications including infotainment power sequencing and sensor biasing |
| DFN1006-3 footprint | Minimizes PCB area (0.6 mm²) while maintaining thermal performance via exposed pad soldering |
| 1 kV HBM ESD protection | Eliminates need for external gate protection components in ESD-prone assembly environments |
Applications
| Automotive Interior Lighting Control | Portable Medical Sensor Biasing |
|---|---|
Use Scenario: Switching 3.3 V bias rails for ambient light sensors and touch controllers in vehicle cabins. IC Role / Device Role / Timing Role: High-side load switch controlling power delivery to analog front-end ICs. Use Value: Low VGS(th) ensures full turn-on from MCU GPIO; RDS(ON) limits voltage drop to <0.6 V at 100 mA, preserving ADC reference accuracy. | Use Scenario: Enabling/disabling power to low-noise op-amps and temperature sensors in handheld diagnostic devices. IC Role / Device Role / Timing Role: Precision on/off control of analog signal chain power domains. Use Value: Sub-1 V threshold allows clean shutdown using 1.8 V microcontroller outputs; low leakage (<10 µA) prevents battery drain during sleep modes. |
| USB-C Port Power Management | Industrial IoT Node Voltage Translation |
Use Scenario: Controlling VCONN or auxiliary power paths in USB-C receptacles where space is constrained. IC Role / Device Role / Timing Role: Compact, logic-compatible high-side switch for 5 V auxiliary rails. Use Value: DFN1006-3 footprint fits within tight connector keepouts; AEC-Q101 rating supports extended temperature operation near connectors. | Use Scenario: Level-shifting 3.3 V control signals to 5 V sensor buses in edge-node gateways. IC Role / Device Role / Timing Role: Bidirectional voltage translator using source-follower configuration. Use Value: Verified RDS(ON) stability across –55 to +125 °C ensures consistent translation ratio in uncontrolled environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMP56D0UFB-7 | Lower VDSS (–40 V), lower RDS(ON) (≤ 4.5 Ω @ –4 V), same package and pinout | Preferred for 3.3 V/5 V systems with <40 V transients; not suitable for 50 V surge environments | Select when lower on-resistance is critical and system max voltage is ≤40 V |
| DMG1012T-7 | Higher VDSS (–60 V), higher RDS(ON) (≤ 12 Ω @ –4.5 V), same DFN1006-3 footprint | Supports wider input range but requires higher gate drive voltage for optimal RDS(ON) | Choose when 50–60 V transient immunity is required and 12 Ω on-resistance is acceptable |
Compared with DMP56D0UFB-7, DMP57D5UFB-7 offers higher voltage margin (–50 V vs –40 V) at the cost of slightly higher RDS(ON); versus DMG1012T-7, it delivers lower conduction loss at lower gate voltages but sacrifices absolute voltage rating-making it optimal for 3.3 V logic-controlled 50 V-tolerant bias switching.
Availability
DMP57D5UFB-7 is available at Aetrix Electronics and suitable for automotive interior lighting control, portable medical sensor biasing, and USB-C port power management requiring stable component supply and long-term lifecycle support.
Supply support for DMP57D5UFB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.
This part belongs to Diodes' DMPx series of automotive-qualified small-signal MOSFETs, designed specifically for space-constrained, low-voltage logic-driven power switching in automotive and portable electronics.
FAQ
Is DMP57D5UFB-7 suitable for hot-swap applications?
No. This MOSFET lacks integrated slew-rate control, current limiting, or fault reporting circuitry required for safe hot-swap operation. Its RDS(ON) and thermal resistance are optimized for steady-state switching-not inrush current management. For hot-swap use, consider dedicated hot-swap controllers like DIODES AP22802W.
What is the maximum recommended PCB copper area for thermal relief on the DFN1006-3 exposed pad?
The datasheet specifies thermal characterization on standard FR-4 with 1 in² (645 mm²) of 1 oz copper connected to the exposed pad. For reliable 425 mW operation at TA = 85 °C, use ≥25 mm² of 1 oz copper tied to internal ground planes via ≥4 thermal vias (0.3 mm diameter, filled).
Does the "NOT RECOMMENDED FOR NEW DESIGN" status affect existing production?
No. Diodes Incorporated maintains full production and support for DMP57D5UFB-7 per its published lifetime buy program. The notice reflects newer alternatives (e.g., DMP56D0UFB-7) with improved RDS(ON) or packaging-but does not indicate obsolescence or reduced quality assurance.
Can DMP57D5UFB-7 be used in linear (analog) regulation mode?
Not recommended. Its RDS(ON) variation with temperature (±20% over –55 to +125 °C) and lack of SOA curves beyond pulsed conditions make it unsuitable for stable linear regulation. Use purpose-built LDOs or adjustable regulators for precision analog biasing.
DMP57D5UFB-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-UFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4V
- Rds On (Max) @ Id, Vgs:
- 6Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 29 pF @ 4 V
- FET Feature:
- -
- Power Dissipation (Max):
- 425mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X1-DFN1006-3
DMP57D5UFB-7 FAQ
1.How can I place an order for DMP57D5UFB-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP57D5UFB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP57D5UFB-7 reliable?
The price and inventory of DMP57D5UFB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP57D5UFB-7 is usually 5 days.
3.What payment methods are accepted for DMP57D5UFB-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP57D5UFB-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP57D5UFB-7?
DMP57D5UFB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP57D5UFB-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP57D5UFB-7?
For technical support, including DMP57D5UFB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP57D5UFB-7 requirements.
6.How does Aetrix verify that DMP57D5UFB-7 is sourced from the original manufacturer or authorized distributors?
All DMP57D5UFB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP57D5UFB-7 meets industry standards.
7.What is the process for return or replacement of DMP57D5UFB-7?
All DMP57D5UFB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP57D5UFB-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP57D5UFB-7 part is unused and in its original packaging.
Return procedure for DMP57D5UFB-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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