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Diodes Incorporated DMP58D1LV-13

Part No.:
DMP58D1LV-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
SOT-563, SOT-666
Datasheet:
AetrixDMP58D1LV-13.pdf
Description:
MOSFET 2P-CH 50V 0.22A SOT563
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,096

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Product details

Overview

DMP58D1LV-13 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in SOT563 package, rated for -50V VDSS, 8 Ω RDS(on) @ VGS = -5V, and -220 mA continuous drain current at +25°C. It serves as a compact, low-threshold switching device for bidirectional power path control in space-constrained portable electronics.

For engineers reviewing the DMP58D1LV-13 datasheet, DMP58D1LV-13 pinout, DMP58D1LV-13 application, or DMP58D1LV-13 equivalent, key selection criteria include its dual-channel symmetry, low gate threshold (-0.8 to -2.0 V), fast switching (tr = 12 ns), body diode conduction capability, and thermal resistance of 259 °C/W on standard FR-4.

Technical Context

This dual MOSFET integrates two identical P-channel devices sharing no internal connection-each channel has independent source, drain, and gate terminals. Its low RDS(on) and sub-2V gate threshold enable direct interfacing with 1.8–3.3V logic without level shifting.

The device features low input capacitance (Ciss = 37 pF) and minimal gate charge (Qg = 0.6 nC @ VGS = -5V), supporting high-frequency switching up to several MHz in DC-DC load switches and battery protection circuits.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS-50 V - supports rail-to-rail operation in 3.3V/5V systems with margin against transients
RDS(on)8 Ω max @ VGS = -5V - enables <175 mW conduction loss at 220 mA, suitable for low-power load switching
VGS(th)-0.8 to -2.0 V - ensures full enhancement with 1.8V GPIO, eliminating need for external bias
Ciss37 pF - reduces drive power and propagation delay in high-speed digital switching
tr/tf12 ns / 21 ns - supports >10 MHz PWM duty-cycle control in LED dimming or power sequencing
PD0.49 W - delivers 220 mA continuously on standard 2oz FR-4 with minimum pad layout
TJ Range-55 to +150 °C - qualified for extended industrial temperature operation without derating

Pinout & Package

Package: SOT563 - 6-pin ultra-small surface-mount package (1.6 × 1.6 × 0.6 mm), lead-free, halogen-free, RoHS-compliant, moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
1 (S1)Source of Channel 1Common return node for first MOSFET; tied to system ground or local reference in dual-switch configurations
2 (G1)Gate of Channel 1Logic-level control input; accepts 1.8–5V drive directly without buffering
3 (D1)Drain of Channel 1Switched output node; connects to load or power rail requiring reverse-polarity protection
4 (D2)Drain of Channel 2Independent second switched output; enables dual-path isolation (e.g., USB VBUS + ID detection)
5 (G2)Gate of Channel 2Separate logic input for asynchronous control of second channel
6 (S2)Source of Channel 2Independent source terminal; allows floating or differential source referencing per channel

Key Features

FeatureDesign Value
Dual independent P-channel topologyEnables two isolated high-side switches in one footprint-reducing PCB area by 40% vs. discrete SOT23 solutions
Low gate threshold voltageVGS(th) down to -0.8 V ensures reliable turn-on with 1.8V microcontroller I/O, avoiding weak-drive failure modes
Low input capacitanceCiss = 37 pF minimizes gate drive current demand and timing skew between channels
Fast switching with low QgQg = 0.6 nC @ -5V enables <50 ns total switching transition under 10 kΩ drive impedance
Body diode forward voltageVSD = -0.8 V @ -100 mA supports bidirectional current flow in analog switch or reverse-current blocking roles

Applications

USB Type-C Port Power SwitchingPortable Device Battery Protection

Use Scenario: Dual-path control of VBUS and CC line power in compact USB-C receptacles.

IC Role / Device Role / Timing Role: Dual high-side switch managing 5V power delivery and configuration channel biasing independently.

Use Value: Eliminates need for two separate SOT23-6 MOSFETs; reduces BOM count and layout area while maintaining channel isolation.

Use Scenario: Reverse-current blocking and charge/discharge path isolation in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: Back-to-back P-MOSFET pair emulated using independent channels to prevent battery drain during shutdown.

Use Value: Achieves <1 µA off-state leakage (IDSS ≤ 500 nA) and withstands -50V reverse transients without external TVS.

IoT Sensor Node Power GatingIndustrial PLC Digital Input Conditioning

Use Scenario: Selective power-down of RF transceivers, ADCs, and sensors in battery-powered edge nodes.

IC Role / Device Role / Timing Role: Low-threshold load switch enabling microcontroller-driven sleep/wake sequencing with <100 ns response.

Use Value: Reduces quiescent current to <100 nA (IGSS ≤ ±100 nA) during deep-sleep, extending battery life by >30%.

Use Scenario: Isolation and level translation of 24V field inputs to 3.3V logic in modular I/O modules.

IC Role / Device Role / Timing Role: High-voltage tolerant front-end switch protecting downstream logic from ESD and overvoltage events.

Use Value: Withstands ±20V gate-source stress and -50V drain-source breakdown, enabling direct interface without Zener clamps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN58D1LH-7Same die, but in SOT26 package; higher RDS(on) (10 Ω @ -5V); 0.5 W PDLarger footprint; less suitable for ultra-dense layouts; higher thermal resistance (300 °C/W)Select when board space permits and higher power dissipation margin is required
AO6401Single-channel P-MOSFET (SOT23-6); RDS(on) = 70 mΩ @ -4.5V; VDSS = -30VRequires two devices for dual function; lower voltage rating limits use in 48V auxiliary railsChoose only if dual-channel integration is unnecessary and -30V rating suffices

Compared with DMN58D1LH-7 and AO6401, DMP58D1LV-13 provides superior space efficiency via integrated dual-channel SOT563 packaging, tighter gate threshold distribution for 1.8V logic compatibility, and optimized thermal performance on minimal copper area-making it optimal for wearables and miniaturized industrial controllers.

Availability

DMP58D1LV-13 is available at Aetrix Electronics and suitable for USB-C port management, IoT sensor node power gating, and industrial PLC digital input conditioning requiring stable component supply across long-lifecycle embedded programs.

Supply support for DMP58D1LV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, energy-efficient components for industrial, computing, and consumer markets.

The DMP58D1LV belongs to Diodes' low-voltage logic-level MOSFET product line, engineered specifically for space-constrained, battery-sensitive applications where dual-channel integration, low gate drive voltage, and robust transient immunity are critical.

FAQ

What is the maximum continuous drain current per channel at +70°C?

The DMP58D1LV-13 supports -180 mA continuous drain current per channel at +70°C ambient, as specified in the Absolute Maximum Ratings table. This derating reflects junction temperature rise under standard FR-4 mounting conditions with minimum recommended pad layout, ensuring safe operation within the -55°C to +150°C junction range.

Can the two channels be used in series for higher voltage blocking?

No-the DMP58D1LV-13 channels share no internal connection and have independent sources, but their drains and sources are not rated for series-connected voltage division. Each channel is individually rated for -50V VDSS; stacking them does not increase blocking capability and risks uneven voltage distribution due to parameter mismatch.

Is the body diode suitable for reverse polarity protection?

Yes-the intrinsic body diode exhibits VSD = -0.8 V at -100 mA and supports bidirectional conduction. When configured as a high-side switch with source tied to input rail and drain to load, it blocks reverse current during power-off, meeting typical reverse-polarity protection requirements in 5V systems.

Does this part require external gate resistors for EMI suppression?

Not inherently-the low Qg (0.6 nC) and fast tr/tf make gate ringing possible with long traces or high-drive-strength MCUs. A 10–47 Ω series gate resistor is recommended for EMI control in noisy environments, especially when driving capacitive loads >100 pF or operating above 1 MHz.

DMP58D1LV-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 P-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
50V
Current - Continuous Drain (Id) @ 25°C:
220mA (Ta)
Rds On (Max) @ Id, Vgs:
8Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
37pF @ 25V
Power - Max:
490mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-563

DMP58D1LV-13 FAQ

1.How can I place an order for DMP58D1LV-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP58D1LV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP58D1LV-13 reliable?

The price and inventory of DMP58D1LV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP58D1LV-13 is usually 5 days.

3.What payment methods are accepted for DMP58D1LV-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP58D1LV-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP58D1LV-13?

DMP58D1LV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP58D1LV-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP58D1LV-13?

For technical support, including DMP58D1LV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP58D1LV-13 requirements.

6.How does Aetrix verify that DMP58D1LV-13 is sourced from the original manufacturer or authorized distributors?

All DMP58D1LV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP58D1LV-13 meets industry standards.

7.What is the process for return or replacement of DMP58D1LV-13?

All DMP58D1LV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP58D1LV-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP58D1LV-13 part is unused and in its original packaging.

Return procedure for DMP58D1LV-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMP58D1LV-13 Tags

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