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Diodes Incorporated DMP58D1LV-7
- Part No.:
- DMP58D1LV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMP58D1LV-7.pdf
- Description:
- MOSFET 2P-CH 50V 0.22A SOT563
- Quantity:
- Payment:
- Shipping:
Inventory:1,465
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Product details
Overview
DMP58D1LV-7 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in SOT563 package, rated for -50V VDSS, 8 Ω RDS(on) @ VGS = -5V, and -220 mA continuous drain current at +25°C. It serves as a compact, low-threshold power switch for space-constrained DC-DC load switching and analog signal routing in portable electronics.
For engineers reviewing the DMP58D1LV-7 datasheet, DMP58D1LV-7 pinout, DMP58D1LV-7 application, or DMP58D1LV-7 equivalent, key selection criteria include verified dual-channel P-MOS topology, gate threshold voltage (-0.8 to -2.0 V), body diode forward voltage (-0.8 to -1.4 V), thermal resistance (259 °C/W), and SOT563 footprint compatibility with high-density PCB layouts.
Technical Context
This device integrates two independent P-channel MOSFETs sharing no internal connection-each channel features separate source, drain, and gate terminals. Its low gate threshold enables direct interfacing with 3.3 V logic without level shifting, while low input capacitance (37 pF) supports fast switching (tD(on) = 2.6 ns, tf = 21 ns) in battery-powered systems.
The dual configuration allows synchronous operation in bidirectional analog switches or independent control of two low-power rails. Thermal performance is defined for FR-4 boards with minimum pad layout (RθJA = 259 °C/W) and enhanced 1-inch² copper (RθJA = 159 °C/W), supporting stable operation up to +150°C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -50 V - maximum blocking voltage per channel before avalanche conduction |
| RDS(on) | 8 Ω @ VGS = -5V, ID = -100mA - on-resistance determines conduction loss in load-switching applications |
| VGS(th) | -0.8 to -2.0 V - ensures reliable turn-on with standard 3.3 V GPIO, reducing need for external drivers |
| Ciss | 37 pF - low input capacitance minimizes gate drive energy and speeds up switching transitions |
| ID (max) | -220 mA @ TA = +25°C - continuous current rating per channel under standard PCB thermal conditions |
| tf | 21 ns - fall time defines minimum pulse width capability and reduces switching losses |
| Qg | 0.6 nC @ VGS = -5V - total gate charge impacts driver sizing and switching efficiency at high frequency |
Pinout & Package
Package: SOT563 - ultra-compact 6-pin surface-mount package (1.60 × 1.60 × 0.60 mm), lead-free, halogen-free, RoHS-compliant, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Common return path for first MOSFET; tied to system ground or negative rail in high-side switch configuration |
| 2 (G1) | Gate of Channel 1 | Control terminal for Channel 1; requires negative bias relative to S1 to turn on |
| 3 (D1) | Drain of Channel 1 | Output node for Channel 1; connects to load or downstream circuitry |
| 4 (D2) | Drain of Channel 2 | Independent output node for second MOSFET; electrically isolated from D1 |
| 5 (G2) | Gate of Channel 2 | Separate control terminal for Channel 2; enables independent or synchronized switching |
| 6 (S2) | Source of Channel 2 | Return path for Channel 2; may be connected to same or different reference than S1 |
Key Features
| Feature | Design Value |
|---|---|
| Low gate threshold voltage | VGS(th) down to -0.8 V enables full enhancement with 3.3 V logic-level control signals |
| Ultra-low input capacitance | Ciss = 37 pF reduces gate drive power and improves switching speed in portable systems |
| Matched dual-channel structure | Two fully isolated P-MOS devices in one SOT563 footprint save board area versus discrete solutions |
| Thermally robust packaging | RθJA = 159 °C/W with enhanced copper pad supports sustained 220 mA operation at elevated ambient temperatures |
Applications
| Battery Load Switching | Analog Signal Routing |
|---|---|
Use Scenario: Power gating of non-critical subsystems (e.g., Bluetooth module, sensor array) in wearables to extend battery life. IC Role / Device Role / Timing Role: Dual-channel P-MOSFET acts as two independent high-side load switches controlled by MCU GPIOs. Use Value: Low RDS(on) (8 Ω) and low leakage (<500 nA) minimize quiescent current and voltage drop during active operation. | Use Scenario: Bidirectional analog multiplexing in medical sensor front-ends where signal integrity and low on-capacitance are critical. IC Role / Device Role / Timing Role: Each channel functions as a low-leakage analog switch; body diode orientation supports reverse-current blocking. Use Value: Ciss = 37 pF and VSD = -0.8 V ensure minimal signal distortion and fast settling in sub-1 MHz signal paths. |
| USB Port Power Control | Low-Power Microcontroller Peripherals |
Use Scenario: Independent 5 V and 3.3 V rail switching for USB-C accessory detection and VBUS management in portable hubs. IC Role / Device Role / Timing Role: Dual P-MOS provides isolated high-side switching for two independent supply domains. Use Value: -50 V VDSS rating provides margin against transient overvoltage events on USB lines. | Use Scenario: Controlled power-up sequencing of RF transceiver, EEPROM, and display driver peripherals in IoT edge nodes. IC Role / Device Role / Timing Role: Two independent enable switches driven by microcontroller reset or sleep-state pins. Use Value: Matched VGS(th) across channels ensures consistent turn-on timing and eliminates sequencing skew. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN58D1LW-7 | Same SOT563 package, but N-channel; requires high-side driver or logic inversion for high-side switching | Not suitable for direct 3.3 V GPIO-controlled high-side loads without additional circuitry | Select only if N-channel topology aligns with existing gate drive architecture and level-shifting is acceptable |
| AO6401 | Higher RDS(on) (11 Ω @ -4.5 V), larger TSOP-6 package (3.05 × 1.65 mm), higher Qg (2.1 nC) | Less suitable for ultra-compact, low-power designs due to larger footprint and higher switching losses | Prefer when higher current handling (>300 mA) is required and board space permits larger package |
Compared with DMN58D1LW-7 and AO6401, DMP58D1LV-7 delivers optimal combination of low gate threshold, compact SOT563 size, and matched dual-channel performance for 3.3 V–controlled load switching in space- and power-constrained applications.
Availability
DMP58D1LV-7 is available at Aetrix Electronics and suitable for battery load switching, analog signal routing, and USB port power control requiring stable component supply, long-term lifecycle support, and traceable sourcing for consumer and industrial OEM programs.
Supply support for DMP58D1LV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, energy-efficient components for power management, signal integrity, and protection applications.
The DMP58D1LV belongs to Diodes' low-voltage P-channel MOSFET product line, engineered specifically for compact, logic-level-compatible power switching in portable and battery-operated electronics.
FAQ
What is the maximum continuous drain current per channel at +70°C ambient?
The DMP58D1LV-7 supports -180 mA continuous drain current per channel at TA = +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations under standard FR-4 mounting conditions with minimum recommended copper pad layout.
Can both channels be used in parallel to increase current capacity?
No-parallel operation is not recommended. The device contains two electrically isolated P-MOSFETs with no internal matching guarantee; uneven current sharing due to VGS(th) variation could cause thermal runaway. Each channel must be used independently per datasheet design intent.
Is the body diode rated for reverse recovery in high-frequency switching?
Yes-the body diode has characterized reverse recovery parameters: tRR = 67 ns and QRR = 78 nC at IF = -1 A and di/dt = 100 A/μs. These values support use in moderate-frequency (<1 MHz) synchronous rectification or flyback snubbing where controlled reverse recovery is required.
Does the SOT563 package support reflow soldering per JEDEC J-STD-020?
Yes-the SOT563 package is rated Moisture Sensitivity Level 1 per J-STD-020, meaning it may be stored indefinitely at ≤30°C/85% RH and is compatible with standard Pb-free reflow profiles without baking, simplifying manufacturing for high-volume assembly.
DMP58D1LV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 220mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 8Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 37pF @ 25V
- Power - Max:
- 490mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMP58D1LV-7 FAQ
1.How can I place an order for DMP58D1LV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP58D1LV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP58D1LV-7 reliable?
The price and inventory of DMP58D1LV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP58D1LV-7 is usually 5 days.
3.What payment methods are accepted for DMP58D1LV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP58D1LV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP58D1LV-7?
DMP58D1LV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP58D1LV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP58D1LV-7?
For technical support, including DMP58D1LV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP58D1LV-7 requirements.
6.How does Aetrix verify that DMP58D1LV-7 is sourced from the original manufacturer or authorized distributors?
All DMP58D1LV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP58D1LV-7 meets industry standards.
7.What is the process for return or replacement of DMP58D1LV-7?
All DMP58D1LV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP58D1LV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP58D1LV-7 part is unused and in its original packaging.
Return procedure for DMP58D1LV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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