Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMP6050SSD-13

Part No.:
DMP6050SSD-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDMP6050SSD-13.pdf
Description:
MOSFET 2P-CH 60V 4.8A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:33,589

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMP6050SSD-13 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in SO-8 package, rated for -60V V(BR)DSS, 55mΩ RDS(on) @ -10V VGS, and -11.3A continuous drain current at TC = +25°C. It serves as a synchronous rectifier or load switch in high-efficiency DC-DC converters and power management circuits.

For engineers reviewing the DMP6050SSD-13 datasheet, DMP6050SSD-13 pinout, DMP6050SSD-13 application, or DMP6050SSD-13 equivalent, key selection criteria include its dual-channel P-channel topology, low gate charge (11.9nC @ -4.5V), fast switching (tD(off) = 46.7ns), body diode recovery performance (trr = 13.6ns), and thermal resistance (RθJA = 72°C/W on 2oz copper).

Technical Context

This dual P-MOSFET integrates two matched enhancement-mode channels sharing a common source configuration in a single SO-8 package. Its gate threshold voltage range (-1.0V to -3.0V) enables reliable turn-on with standard logic-level drive, while low input capacitance (Ciss = 1293pF) supports high-frequency operation up to several hundred kHz.

The device features a robust avalanche rating (IAS = -24.8A, EAS = 30.8mJ) and operates across -55°C to +150°C junction temperature. Its body diode forward voltage (VSD = -0.7V to -1.2V @ -1A) and reverse recovery charge (Qrr = 7.4nC) are optimized for synchronous buck topologies requiring low conduction loss and minimal shoot-through risk.

Key Specifications

Parameter Value and Actual Design Meaning
V(BR)DSS -60V - Maximum blocking voltage before avalanche onset; defines usable input range in 48V systems.
RDS(on) max 55mΩ @ -10V VGS - Conduction loss of ~310mW at -5A; enables <95% efficiency in 12V→5V buck converters.
ID (TC=25°C) -11.3A - Continuous current capability with heatsinking; supports >50W power stages in compact layouts.
Qg (VGS=-4.5V) 11.9nC - Gate drive energy requirement; determines driver strength needed for <50ns switching transitions.
Ciss 1293pF - Input capacitance at -30V VDS; sets Miller plateau duration and impacts EMI in hard-switched designs.
trr 13.6ns - Body diode reverse recovery time; minimizes voltage overshoot and cross-conduction loss in synchronous rectification.
RθJA 72°C/W - Thermal resistance on 2oz FR-4 board; allows ~1.1W dissipation before exceeding 125°C junction limit at 70°C ambient.

Pinout & Package

Package: SO-8 (Surface-mount, 8-pin small-outline integrated circuit), molded green plastic, UL 94V-0 rated, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
S1 Source of Channel 1 Common source node for first P-MOSFET; tied internally to S2 in typical dual-source configuration.
D2 Drain of Channel 2 Output terminal for second channel; used for independent load switching or complementary half-bridge control.
S2 Source of Channel 2 Common source node for second P-MOSFET; electrically connected to S1 per internal layout.
D1 Drain of Channel 1 Primary output terminal for first channel; configured for high-side switching in buck or OR-ing applications.
G2 Gate of Channel 2 Independent gate control for second channel; enables dual independent switching or parallel operation.
G1 Gate of Channel 1 Isolated gate input for first channel; requires negative gate drive relative to source for turn-on.

Key Features

Feature Design Value
Low RDS(on) at -4.5V 70mΩ - Enables efficient operation from 5V logic rails without level-shifting circuitry.
Fully RoHS & Halogen-Free Br/Cl <900ppm, Sb <1000ppm - Complies with IPC-1752A material declarations and automotive PPAP requirements.
Fast Turn-Off Delay tD(off) = 46.7ns - Reduces dead-time losses in synchronous rectifiers operating above 300kHz.
Low Qgd / Qgs Ratio 5.7nC / 3.6nC = 1.58 - Improves controllability during Miller region and reduces risk of spurious turn-on.
Enhanced Avalanche Robustness EAS = 30.8mJ - Withstands repetitive inductive switching events in motor drive or solenoid control without degradation.

Applications

DC-DC Buck Converter Hot-Swap OR-ing Circuit

Use Scenario: 48V-to-12V step-down converter in telecom power shelf with 200kHz switching frequency and 15A output.

IC Role / Device Role / Timing Role: Dual P-MOSFET used as synchronous rectifier pair replacing Schottky diodes; G1/G2 driven by dedicated gate controller.

Use Value: Reduces conduction loss by 42% vs. 40V Schottky, improving full-load efficiency from 91% to 94.3%.

Use Scenario: Redundant 24V power supply inputs feeding a single backplane bus with automatic failover.

IC Role / Device Role / Timing Role: Each channel independently controls one supply path; body diodes provide passive OR-ing during gate-off states.

Use Value: Eliminates 0.4V forward drop per path, reducing heat generation by 3.2W at 8A and enabling fanless enclosure design.

LCD Backlight Inverter Industrial I/O Protection

Use Scenario: High-voltage boost stage driving CCFL lamps in medical display equipment requiring stable 600V AC output.

IC Role / Device Role / Timing Role: Configured as high-side switch controlling primary-side current; operated in linear mode for analog dimming control.

Use Value: Low RDS(on) and tight VGS(th) distribution (-1.0V to -3.0V) ensure consistent lamp brightness across temperature (-40°C to +85°C).

Use Scenario: 24V digital output module protecting PLC field wiring against reverse polarity and short-circuit faults.

IC Role / Device Role / Timing Role: P-MOSFET used as reverse-polarity protection switch upstream of LDO; S1/S2 tied to system ground.

Use Value: Integrated body diode blocks reverse current; 60V rating accommodates 24V transients up to ±40V without external TVS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMC2038LSD-13 Lower V(BR)DSS (-40V), higher RDS(on) (90mΩ @ -4.5V), smaller Qg (7.2nC) Restricted to ≤36V input systems; better suited for battery-powered portable devices with tight gate drive budgets. Select when input voltage never exceeds 36V and ultra-low Qg is prioritized over breakdown margin.
SI6926ADQ-T1-GE3 Higher V(BR)DSS (-65V), lower RDS(on) (42mΩ @ -10V), larger Ciss (1520pF) Supports wider input range including 60V industrial buses; increased capacitance raises gate drive demand and EMI risk. Prefer when 65V rating and sub-45mΩ conduction are critical, and gate driver can deliver ≥28nC at -10V.

Compared with DMP6050SSD-13, DMC2038LSD-13 trades breakdown safety for gate drive efficiency in low-voltage portable gear, while SI6926ADQ-T1-GE3 delivers lower conduction loss at the cost of higher capacitive loading-making DMP6050SSD-13 the balanced choice for 48V telecom and industrial DC-DC where reliability, thermal margin, and drive simplicity are co-prioritized.

Availability

DMP6050SSD-13 is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap OR-ing circuits, and LCD backlight inverters requiring stable component supply, long-term lifecycle support, and traceable green-material compliance.

Supply support for DMP6050SSD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and Malaysia.

The DMP6050SSD belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency power conversion in space-constrained industrial and telecom infrastructure where low RDS(on), fast switching, and robust thermal performance are essential.

FAQ

What is the maximum safe operating junction temperature for DMP6050SSD-13?

The absolute maximum junction temperature is +150°C, with derating required above +70°C ambient. At TC = +70°C, the device supports -9.1A continuous drain current under specified PCB thermal conditions (2oz copper, 1-inch² thermal pad). Operation beyond 150°C risks permanent parametric shift and bondwire failure.

Can DMP6050SSD-13 be used in linear (analog) mode for adjustable current limiting?

Yes-the device supports linear-mode operation with guaranteed Safe Operating Area (SOA) up to 10ms pulses at VDS = -30V and ID = -5A. Its RDS(on) variation vs. temperature is characterized (Figure 6), enabling predictable current-limiting behavior in analog regulators or soft-start circuits without thermal runaway.

Is the body diode suitable for freewheeling in synchronous rectification?

Yes-the body diode has trr = 13.6ns and Qrr = 7.4nC at IF = -5A, di/dt = 100A/μs, making it suitable for synchronous rectification in buck converters up to 500kHz. However, external Schottky diodes may still be preferred in ultra-high-frequency designs (>1MHz) due to lower Qrr.

Does DMP6050SSD-13 require gate resistors for stability in high-speed switching?

Yes-a series gate resistor (typically 3–10Ω) is recommended to damp ringing caused by gate loop inductance and Crss feedback. The datasheet specifies tD(on)/tD(off) test conditions using RG = 3Ω; omitting this resistor increases EMI and risks false turn-on due to dv/dt coupling through Crss.

DMP6050SSD-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 P-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
4.8A
Rds On (Max) @ Id, Vgs:
55mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1293pF @ 30V
Power - Max:
1.2W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

DMP6050SSD-13 FAQ

1.How can I place an order for DMP6050SSD-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP6050SSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP6050SSD-13 reliable?

The price and inventory of DMP6050SSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP6050SSD-13 is usually 5 days.

3.What payment methods are accepted for DMP6050SSD-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP6050SSD-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP6050SSD-13?

DMP6050SSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP6050SSD-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP6050SSD-13?

For technical support, including DMP6050SSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP6050SSD-13 requirements.

6.How does Aetrix verify that DMP6050SSD-13 is sourced from the original manufacturer or authorized distributors?

All DMP6050SSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP6050SSD-13 meets industry standards.

7.What is the process for return or replacement of DMP6050SSD-13?

All DMP6050SSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP6050SSD-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP6050SSD-13 part is unused and in its original packaging.

Return procedure for DMP6050SSD-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMP6050SSD-13 Tags

  • DMP6050SSD-13
  • DMP6050SSD-13 PDF
  • DMP6050SSD-13 Datasheet
  • DMP6050SSD-13 Specifications
  • DMP6050SSD-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMP6050SSD-13
  • Buy DMP6050SSD-13
  • DMP6050SSD-13 Price
  • DMP6050SSD-13 Distributor
  • DMP6050SSD-13 Supplier
  • DMP6050SSD-13 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER