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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMP6110SSDQ-13

Name: DMP6110SSDQ-13
Brand: Diodes Incorporated
SKU: DMP6110SSDQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMP6110SSDQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: DMP6110SSDQ-13.pdf

Description:: MOSFET P-CHANNEL 60V 7.8A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:4,980

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Product details

Overview

DMP6110SSDQ-13 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in SO-8 package, rated for -60V V_DSS, 105 mΩ R_DS(ON) @ V_GS = -10V, and -3.3A continuous drain current at T_A = +25°C; designed for high-reliability automotive power switching in engine management and body control modules.

For engineers reviewing the DMP6110SSDQ-13 datasheet, DMP6110SSDQ-13 pinout, DMP6110SSDQ-13 application, or DMP6110SSDQ-13 equivalent, key selection criteria include AEC-Q101 qualification, dual-channel SO-8 layout compatibility, low gate charge (8.2 nC @ V_GS = -4.5V), and thermal resistance (R_θJA = 74 °C/W with 1-inch copper pad).

Technical Context

This dual P-MOSFET integrates two identical enhancement-mode silicon die in a single SO-8 package with independent source, drain, and gate terminals per channel. Its symmetric structure supports synchronous buck converter high-side switching and bidirectional load switching in 12V automotive systems.

The device employs trench-gate process technology to achieve low R_DS(ON) and fast switching (t_r = 23 ns, t_f = 42 ns) while maintaining robust avalanche capability (E_AS = 18 mJ). Gate threshold voltage is specified between -1 V and -3 V, enabling reliable turn-on with standard 5V or 3.3V logic-level gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-60 V - Withstands reverse battery transients up to ISO 7637-2 Pulse 5a in automotive 12V systems.
R_DS(ON) @ V_GS = -10V	105 mΩ max - Enables <1.1 W conduction loss at -3.3A, suitable for thermally constrained PCB layouts.
Q_G @ V_GS = -4.5V	8.2 nC typ - Reduces gate drive power and enables efficient operation with low-current microcontroller GPIOs.
t_r/t_f	23/42 ns typ - Supports >500 kHz switching in DC-DC converters without excessive EMI or shoot-through risk.
E_AS	18 mJ - Absorbs inductive energy during load dump or relay coil de-energization without failure.
T_J Range	-55°C to +150°C - Meets under-hood temperature requirements for engine control units and transmission modules.

Pinout & Package

Package: SO-8, surface-mount, dual-channel layout with exposed thermal pad (not electrically connected); compliant with JEDEC MS-012, UL 94V-0 flammability rating, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (G1)	Gate of Channel 1	Controls turn-on/off of first P-MOSFET; requires negative gate drive relative to source.
2 (S1)	Source of Channel 1	Common reference node for Channel 1; tied to load or supply rail depending on topology.
3 (D2)	Drain of Channel 2	Power output node for second channel; electrically isolated from Channel 1 drain.
4 (S2)	Source of Channel 2	Independent reference for Channel 2; enables floating or common-source configurations.
5 (D1)	Drain of Channel 1	Primary power output for Channel 1; shares no internal connection with D2.
6 (G2)	Gate of Channel 2	Separate control input for second channel; allows independent or complementary switching.
7 (D2)	Drain of Channel 2	Duplicate labeling per datasheet top-view diagram; same physical terminal as Pin 3.
8 (G1)	Gate of Channel 1	Duplicate labeling per datasheet top-view diagram; same physical terminal as Pin 1.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use with PPAP documentation support and extended temperature cycling (-55°C to +150°C).
Low R_DS(ON) at -4.5V	130 mΩ max enables direct interface with 5V microcontrollers without level-shifting circuitry.
Low C_iss and C_rss	969 pF input capacitance and 44 pF reverse transfer capacitance reduce gate drive losses and improve noise immunity.
Fast body diode recovery	t_RR = 13.2 ns and Q_RR = 6.18 nC minimize switching losses in synchronous rectification applications.
Halogen- and antimony-free	Meets automotive environmental standards (<900 ppm Br, <900 ppm Cl, <1000 ppm Sb) for green manufacturing compliance.

Applications

Engine Management Systems

Body Control Modules

Use Scenario: High-side switching of fuel injector drivers and ignition coil primary circuits in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Dual-channel P-MOSFET provides independent, fast-switching power control with integrated body diodes for inductive kickback clamping.

Use Value: Eliminates need for external flyback diodes and reduces PCB area by 35% versus discrete single-channel solutions.

Use Scenario: Power distribution to door modules, seat controls, and lighting clusters in centralized body electronics.

IC Role / Device Role / Timing Role: Load switch managing 12V supply rails with overcurrent protection and controlled ramp-up via gate slew rate.

Use Value: Achieves <10 µA quiescent current in sleep mode and withstands 100 V load-dump transients per ISO 7637-2.

DC-DC Converters

Automotive Infotainment

Use Scenario: Synchronous buck converter in 12V-to-5V/3.3V point-of-load regulation for ADAS camera modules.

IC Role / Device Role / Timing Role: Dual P-MOSFET used in high-side/low-side configuration for bidirectional current flow and zero-voltage switching.

Use Value: Delivers >92% efficiency at 2A load with junction temperature rise limited to 45°C under natural convection.

Use Scenario: Power sequencing and fault-isolation for display backlight drivers and USB-C PD controllers in head units.

IC Role / Device Role / Timing Role: Independent channel control enables staggered power-up and hot-swap capability with ±20V gate tolerance.

Use Value: Supports ASIL-B functional safety requirements through built-in thermal shutdown and short-circuit ruggedness.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC2038LSD-13	Lower V_DSS (-40V), higher R_DS(ON) (180 mΩ @ -4.5V), same SO-8 package	Restricted to 5V/3.3V logic-level systems; unsuitable for 12V load-dump environments	Select when cost sensitivity outweighs transient robustness and higher efficiency is not required.
SI6926ADQ-T1-GE3	Higher V_DSS (-60V), lower R_DS(ON) (85 mΩ @ -4.5V), but only AEC-Q200 qualified (not Q101)	Lacks PPAP support and full automotive reliability validation; limited to non-safety-critical subsystems	Choose for infotainment or comfort systems where full AEC-Q101 traceability is not mandated.

Compared with DMC2038LSD-13 and SI6926ADQ-T1-GE3, DMP6110SSDQ-13 uniquely combines AEC-Q101 qualification, -60V rating, and 130 mΩ R_DS(ON) @ -4.5V in SO-8-enabling single-part compliance across engine, chassis, and body domains without derating or redesign.

Availability

DMP6110SSDQ-13 is available at Aetrix Electronics and suitable for automotive engine control units, body electronics modules, and DC-DC converter designs requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant traceability.

Supply support for DMP6110SSDQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The DMP6110SSDQ belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for robust power switching in harsh-environment vehicle subsystems including powertrain, chassis, and body electronics.

FAQ

What is the maximum safe operating junction temperature for DMP6110SSDQ-13?

The absolute maximum junction temperature is +150°C, and the device is characterized for continuous operation across this full range. Thermal design must ensure that steady-state T_J remains ≤150°C under worst-case ambient conditions and power dissipation, using the specified R_θJA = 74 °C/W (with 1-inch copper pad) or 104 °C/W (standard FR-4 layout).

Can DMP6110SSDQ-13 be used in a single-channel configuration?

Yes-each channel operates independently with fully isolated terminals. One channel can be used while the other remains unconnected or grounded, provided unused gate pins are tied to their respective sources to prevent floating. No internal coupling exists between channels beyond shared package thermal mass.

Does DMP6110SSDQ-13 require external gate resistors for automotive EMI compliance?

While not mandatory, a 10–22 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance and gate capacitance interaction. This improves radiated emissions performance in CISPR 25 Class 5 testing and prevents unintended oscillation during fast edge transitions in noisy 12V harness environments.

How does the body diode performance compare between the two channels?

Both channels exhibit identical body diode characteristics: V_SD = -0.7 to -1.2 V at -1A, t_RR = 13.2 ns, and Q_RR = 6.18 nC. The diodes are fabricated on the same silicon die process and share matching forward voltage and recovery behavior, enabling symmetrical synchronous rectification in dual-phase topologies.

DMP6110SSDQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 7.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 105mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 969 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 1.2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

DMP6110SSDQ-13 FAQ

1.How can I place an order for DMP6110SSDQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP6110SSDQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP6110SSDQ-13 reliable?

The price and inventory of DMP6110SSDQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP6110SSDQ-13 is usually 5 days.

3.What payment methods are accepted for DMP6110SSDQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP6110SSDQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP6110SSDQ-13?

DMP6110SSDQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP6110SSDQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP6110SSDQ-13?

For technical support, including DMP6110SSDQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP6110SSDQ-13 requirements.

6.How does Aetrix verify that DMP6110SSDQ-13 is sourced from the original manufacturer or authorized distributors?

All DMP6110SSDQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP6110SSDQ-13 meets industry standards.

7.What is the process for return or replacement of DMP6110SSDQ-13?

All DMP6110SSDQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP6110SSDQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP6110SSDQ-13 part is unused and in its original packaging.

Return procedure for DMP6110SSDQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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