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Diodes Incorporated DMP6110SVTQ-13
- Part No.:
- DMP6110SVTQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMP6110SVTQ-13.pdf
- Description:
- MOSFET P-CH 60V 7.3A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:9,958
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Product details
Overview
DMP6110SVTQ-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET rated for -60V VDSS, 105 mΩ RDS(ON) at VGS = -10V, and -7.3A continuous drain current at TC = +25°C. It is AEC-Q101 qualified, PPAP-capable, and designed for automotive power management functions including backlighting and DC-DC converters.
For engineers reviewing the DMP6110SVTQ-13 datasheet, DMP6110SVTQ-13 pinout, DMP6110SVTQ-13 application, or DMP6110SVTQ-13 equivalent, key selection criteria include its TSOT26 package, low gate charge (8.2 nC at VGS = -4.5V), fast switching (tR = 23 ns), body diode recovery performance (tRR = 13.2 ns), and thermal resistance (RθJA = 69 °C/W with 1-inch copper pad).
Technical Context
This MOSFET operates in enhancement mode with a gate threshold voltage of -1 to -3 V and supports robust operation across -55°C to +150°C junction temperature. Its low RDS(ON) at -4.5V gate drive (130 mΩ) enables efficient 5V-control logic interfacing in automotive power rails.
The device features a total gate charge of 17.2 nC at VGS = -10V and exhibits low output capacitance (COSS = 57 pF) and reverse transfer capacitance (CRSS = 44 pF) at VDS = -30V, supporting high-frequency switching in synchronous buck topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -60 V - Withstands up to 60V reverse drain-source voltage without breakdown, suitable for 48V automotive subsystems. |
| RDS(ON) @ VGS = -10V | 105 mΩ - Enables <1.1W conduction loss at 7.3A, critical for thermally constrained TSOT26 footprint. |
| RDS(ON) @ VGS = -4.5V | 130 mΩ - Ensures reliable turn-on with standard 5V logic-level gate drivers in automotive control modules. |
| QG @ VGS = -4.5V | 8.2 nC - Reduces gate drive power and enables >1 MHz switching in compact DC-DC regulators. |
| tRR | 13.2 ns - Minimizes body diode reverse recovery losses during hard commutation in synchronous rectification. |
| RθJA (1-in² Cu) | 69 °C/W - Supports 1.1W continuous dissipation at TA = +70°C, enabling use on standard FR-4 PCBs without heatsinks. |
| ID (max, TC = +25°C) | -7.3 A - Delivers sufficient current for LED backlight drivers and load switches in instrument clusters. |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin surface-mount package with 0.95 mm height, 2.9 mm × 1.6 mm footprint, and matte tin–annealed copper leadframe compliant with MIL-STD-202 solderability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal accepting -10V/-4.5V logic-level drive; low Ciss (969 pF) reduces driver loading. |
| 2 (S) | Source | Reference node for gate drive; internally connected to substrate; used as return path for body diode conduction. |
| 3 (D) | Drain | Main current-carrying terminal; tied to high-side rail in high-side switch configurations. |
| 4 (D) | Drain | Second drain connection for enhanced current handling and thermal spreading in TSOT26 dual-drain layout. |
| 5 (S) | Source | Secondary source terminal providing low-inductance return path and improved thermal coupling to PCB copper. |
| 6 (G) | Gate | Redundant gate connection improving signal integrity and reducing gate loop inductance for fast switching. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive underhood applications with full PPAP documentation support and failure analysis traceability. |
| Low RDS(ON) at -4.5V | 130 mΩ enables direct interface with 5V microcontrollers and ASICs without level-shifting circuitry. |
| Fast body diode recovery | tRR = 13.2 ns and QRR = 6.18 nC reduce switching losses and EMI in synchronous rectifiers. |
| Green packaging | Halogen- and antimony-free molding compound (Br+Cl <1500 ppm, Sb <1000 ppm) meets automotive environmental compliance. |
| Thermal performance | RθJC = 15 °C/W allows effective heat transfer from die to PCB via exposed drain pads in TSOT26 layout. |
Applications
| Automotive Instrument Cluster Backlighting | Automotive Body Control Module Power Switch |
|---|---|
|
Use Scenario: Driving white LED strings in digital dashboards requiring precise current regulation and PWM dimming. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as constant-current sink switch controlled by MCU PWM output. Use Value: Low RDS(ON) minimizes power loss in compact space-constrained cluster PCBs; AEC-Q101 ensures reliability over 15-year vehicle lifetime. |
Use Scenario: Controlling 12V loads such as door locks, window motors, and interior lighting in centralized body electronics units. IC Role / Device Role / Timing Role: Load switch enabling MCU-governed ON/OFF control with integrated reverse polarity protection. Use Value: -60V VDSS withstands load-dump transients up to ISO 7637-2 Pulse 5a; fast tF = 42 ns limits shoot-through risk in multi-switch systems. |
| Automotive DC-DC Converter Synchronous Rectifier | Automotive HVAC Blower Motor Driver |
|
Use Scenario: Secondary-side synchronous rectification in isolated 12V-to-5V/3.3V buck-boost converters powering ADAS sensors. IC Role / Device Role / Timing Role: Low-VGS P-channel MOSFET replacing Schottky diode to improve efficiency at light loads. Use Value: 130 mΩ RDS(ON) at -4.5V enables >92% efficiency at 1A output; low QGD/QGS ratio improves gate drive timing margin. |
Use Scenario: PWM-controlled speed regulation of 24V blower motors in climate control systems. IC Role / Device Role / Timing Role: Half-bridge high-side switch in H-bridge motor driver IC auxiliary stage or discrete implementation. Use Value: Robust avalanche rating (IAS = -19A, EAS = 18 mJ) absorbs inductive kickback during abrupt PWM shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG6110UVQ-7 | Same die, identical RDS(ON) and QG, but in 6-pin UDFN2020-6 (2.0×2.0 mm) package with lower RθJA (55 °C/W). | Better thermal performance in space-constrained layouts; requires different PCB land pattern and reflow profile. | Select when board area permits smaller footprint and higher power density is required. |
| IPD80P03P4L-11 | Higher VDSS (-80V), higher RDS(ON) (3.4 mΩ @ -10V), TO-252 package, higher QG (42 nC). | Designed for higher-voltage industrial motor drives; unsuitable for TSOT26-restricted automotive PCBs. | Choose only if system requires >60V blocking capability and board space allows DPAK mounting. |
Compared with DMG6110UVQ-7, DMP6110SVTQ-13 trades 14 °C/W higher RθJA for proven TSOT26 manufacturability and AEC-Q101-compliant tape-and-reel logistics; versus IPD80P03P4L-11, it delivers superior gate drive compatibility and footprint scalability for next-gen automotive ECUs.
Availability
DMP6110SVTQ-13 is available at Aetrix Electronics and suitable for automotive instrument clusters, body control modules, DC-DC converters, and HVAC motor drivers requiring stable component supply across extended production lifecycles.
Supply support for DMP6110SVTQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.
This part belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for high-reliability power switching in harsh-temperature, high-transient automotive environments.
FAQ
What is the maximum safe operating temperature for DMP6110SVTQ-13?
The junction temperature must not exceed +150°C under any operating condition. At ambient temperatures up to +70°C, the device supports 1.1W continuous power dissipation when mounted on a 1-inch square 2oz copper pad (RθJA = 69 °C/W). Derating is required above +70°C ambient per the thermal resistance curve in Figure 13 of DS39190 Rev. 2-2.
Does DMP6110SVTQ-13 require a gate resistor for automotive PWM switching?
A gate resistor of 3–10 Ω is recommended to dampen ringing caused by gate-drain Miller capacitance (CRSS = 44 pF) and parasitic inductance in high-speed PWM applications. The datasheet specifies tR = 23 ns and tF = 42 ns using RGEN = 3 Ω; increasing resistance slows switching but reduces EMI and overshoot.
Can DMP6110SVTQ-13 be used in bidirectional current applications?
No - this is a unidirectional P-channel MOSFET with an intrinsic body diode oriented from source to drain. It conducts current only from source to drain when forward-biased; reverse conduction (drain to source) is blocked unless the gate is actively driven. Bidirectional switching requires external anti-parallel diodes or complementary N/P pairs.
Is the TSOT26 package of DMP6110SVTQ-13 compatible with standard SMT reflow profiles?
Yes - the TSOT26 package is rated for moisture sensitivity level 1 (per J-STD-020) and uses matte tin–annealed terminals solderable per MIL-STD-202, Method 208. Standard lead-free reflow profiles with peak temperature ≤260°C and time above liquidus 60–90 seconds are fully supported per Diodes' packaging guidelines.
DMP6110SVTQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 105mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 969 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-23-6
DMP6110SVTQ-13 FAQ
1.How can I place an order for DMP6110SVTQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP6110SVTQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP6110SVTQ-13 reliable?
The price and inventory of DMP6110SVTQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP6110SVTQ-13 is usually 5 days.
3.What payment methods are accepted for DMP6110SVTQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP6110SVTQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP6110SVTQ-13?
DMP6110SVTQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP6110SVTQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP6110SVTQ-13?
For technical support, including DMP6110SVTQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP6110SVTQ-13 requirements.
6.How does Aetrix verify that DMP6110SVTQ-13 is sourced from the original manufacturer or authorized distributors?
All DMP6110SVTQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP6110SVTQ-13 meets industry standards.
7.What is the process for return or replacement of DMP6110SVTQ-13?
All DMP6110SVTQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP6110SVTQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP6110SVTQ-13 part is unused and in its original packaging.
Return procedure for DMP6110SVTQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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