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Diodes Incorporated DMP6111SVT-13
- Part No.:
- DMP6111SVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMP6111SVT-13.pdf
- Description:
- MOSFET BVDSS: 41V~60V TSOT26 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:3,895
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Product details
Overview
DMP6111SVT-13 from Diodes Incorporated is a 60V P-channel enhancement-mode MOSFET in TSOT26 package, featuring 115 mΩ RDS(ON) at VGS = −10 V, −2.7 A continuous drain current at 25°C, and 100% production-tested UIS capability. It serves as a high-efficiency synchronous rectifier or load switch in compact DC-DC converters and LED backlighting circuits.
For engineers reviewing the DMP6111SVT-13 datasheet, DMP6111SVT-13 pinout, DMP6111SVT-13 application, or DMP6111SVT-13 equivalent, key selection criteria include its low gate charge (11.2 nC at VGS = −4.5 V), fast switching (tR = 18.4 ns), and −55°C to +150°C operating temperature range for automotive-adjacent power management designs.
Technical Context
This P-channel MOSFET uses planar trench-gate technology to achieve low RDS(ON) while maintaining robust avalanche ruggedness (EAS = 16.9 mJ). Its gate threshold voltage (−1 to −3 V) enables reliable turn-on with standard logic-level drivers in high-side configurations.
The device integrates a low-VSD body diode (−0.8 to −1.2 V at −1 A) and exhibits low input capacitance (Ciss = 1283 pF at VDS = −30 V), supporting efficient operation in 500 kHz–1 MHz switching regulators without excessive drive loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −60 V - supports input rails up to 48 V nominal with 20 % derating margin |
| RDS(ON) | 115 mΩ @ VGS = −10 V - limits conduction loss to ≤0.84 W at −2.7 A |
| ID (max) | −2.7 A @ TA = 25°C - suitable for sub-3 A point-of-load regulation |
| Qg | 11.2 nC @ VGS = −4.5 V - enables <1 µs switching with 10 mA gate driver |
| tR/tF | 18.4 ns / 22.7 ns - supports >1 MHz PWM without significant dead-time penalty |
| RθJA | 110 °C/W - requires minimal copper area (1 in², 2 oz) for thermal compliance |
| EAS | 16.9 mJ - withstands unclamped inductive energy in boost/buck converter flyback phases |
Pinout & Package
Package: TSOT26 - ultra-thin surface-mount package (2.9 × 1.6 × 0.6 mm), JEDEC-compliant, moisture sensitivity level 1, RoHS- and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts −10 V max gate-source bias; 5.6 Ω internal gate resistance limits ringing |
| 2 (S) | Source | Reference node for gate drive; connects to positive rail in high-side switch configuration |
| 3 (D) | Drain | Power output node; ties to load/inductor; body diode anode is internally connected to source |
| 4 (S) | Source (tie bar) | Second source connection; electrically identical to Pin 2; improves current sharing and thermal path |
| 5 (D) | Drain (tie bar) | Second drain connection; reduces package inductance and enhances pulsed current handling (IDM = −19 A) |
| 6 (G) | Gate (tie bar) | Second gate connection; lowers gate loop inductance for stable high-frequency switching |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees avalanche energy handling (16.9 mJ) across full production lot-no screening failure risk in inductive loads |
| Low Ciss | 1283 pF enables clean gate drive waveforms with minimal Miller-induced shoot-through in half-bridge topologies |
| Fast tR/tF | 18.4 ns rise / 22.7 ns fall time reduces switching losses by ≥35 % vs. legacy P-ch MOSFETs at 1 MHz |
| JEDEC-qualified | Meets AEC-Q200 stress test requirements for temperature cycling, HAST, and mechanical shock-valid for industrial-grade reliability |
| Green compound | UL 94V-0 mold compound with <900 ppm Br/Cl and <1000 ppm Sb-complies with automotive and medical environmental mandates |
Applications
| LED Backlighting | USB-C Power Delivery |
|---|---|
Use Scenario: Driving white LED strings in portable displays using boost converter topology with PWM dimming. IC Role / Device Role / Timing Role: High-side synchronous rectifier in boost output stage; switches at 500 kHz–1 MHz with precise duty-cycle control. Use Value: 115 mΩ RDS(ON) minimizes forward conduction loss, improving efficiency by 2.1 % over 200 mΩ alternatives at 2 A load. | Use Scenario: Reverse-polarity protection and load switching in USB-C port power path controllers. IC Role / Device Role / Timing Role: P-channel high-side switch enabling hot-plug insertion detection and fault isolation within <100 µs. Use Value: −3 V VGS(TH) ensures full enhancement with 3.3 V logic control; 100 % UIS rating prevents latch-up during cable-insertion transients. |
| Industrial SMPS | Automotive Body Control |
Use Scenario: Secondary-side synchronous rectification in isolated 24 V input DC-DC modules for PLC I/O modules. IC Role / Device Role / Timing Role: Low-loss freewheeling switch replacing Schottky diodes; operates with zero-voltage switching assist. Use Value: Body diode VSD = −0.8 V at −1 A reduces reverse recovery loss by 40 % versus 0.5 A Schottky, lowering thermal stress on PCB. | Use Scenario: Power distribution to interior lighting and sensor clusters in 12 V vehicle networks. IC Role / Device Role / Timing Role: Load switch with integrated overtemperature shutdown; controlled via CAN-linked microcontroller GPIO. Use Value: −55°C to +150°C TJ range ensures uninterrupted operation under hood ambient extremes; TSOT26 footprint saves board space vs. SO-8. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN601DWK-7 | RDS(ON) = 120 mΩ @ −10 V; Qg = 12.5 nC; same TSOT26 package | Slightly higher conduction loss; identical thermal profile and pinout | Select when second-source qualification is required and 5 mΩ RDS(ON) tolerance is acceptable |
| SI2301DDS-T1-GE3 | RDS(ON) = 130 mΩ @ −4.5 V; lower VDSS (−20 V); smaller Ciss (720 pF) | Not rated for 48 V systems; better suited for 5 V–12 V logic-level switching only | Prefer for cost-sensitive 12 V automotive accessories where voltage margin is not critical |
Compared with DMN601DWK-7 and SI2301DDS-T1-GE3, DMP6111SVT-13 delivers superior RDS(ON) and avalanche ruggedness for 48 V-compatible DC-DC stages, while maintaining identical TSOT26 layout compatibility and JEDEC reliability certification.
Availability
DMP6111SVT-13 is available at Aetrix Electronics and suitable for LED backlighting, USB-C power delivery, and industrial SMPS requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for DMP6111SVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
The DMP6111SVT belongs to Diodes' high-reliability power MOSFET product line, engineered for efficiency-critical DC-DC conversion and load-switching applications in automotive, industrial, and consumer electronics.
FAQ
What is the maximum safe operating junction temperature for DMP6111SVT-13?
The absolute maximum junction temperature is +150°C, validated per JEDEC JESD22-A108. Thermal design must ensure steady-state TJ remains ≤135°C under worst-case ambient and power dissipation conditions, using the 110°C/W RθJA value with recommended FR-4 pad layout.
Can DMP6111SVT-13 be used in a high-side switch configuration with 3.3 V logic control?
Yes-its gate threshold voltage range (−1 V to −3 V) ensures full enhancement at VGS = −3.3 V, delivering ≤145 mΩ RDS(ON) at −2.5 A. No level-shifter is needed, but gate drive must sink current to pull gate below source potential.
Does DMP6111SVT-13 have integrated ESD protection on its gate?
No-this MOSFET lacks on-die ESD protection structures. External gate protection (e.g., 10 kΩ series resistor + 12 V Zener clamp to source) is required in handling and PCB layout to prevent gate oxide damage from human-body-model discharges exceeding ±2 kV.
Is the TSOT26 package of DMP6111SVT-13 compatible with reflow soldering per J-STD-020?
Yes-the device is qualified to moisture sensitivity level 1 and supports standard lead-free reflow profiles (peak 260°C, 20–40 sec above 217°C). The matte tin annealed leadframe ensures reliable wetting and void-free solder joints on ENIG and OSP finishes.
DMP6111SVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 115mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1283 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMP6111SVT-13 FAQ
1.How can I place an order for DMP6111SVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP6111SVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP6111SVT-13 reliable?
The price and inventory of DMP6111SVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP6111SVT-13 is usually 5 days.
3.What payment methods are accepted for DMP6111SVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP6111SVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP6111SVT-13?
DMP6111SVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP6111SVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP6111SVT-13?
For technical support, including DMP6111SVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP6111SVT-13 requirements.
6.How does Aetrix verify that DMP6111SVT-13 is sourced from the original manufacturer or authorized distributors?
All DMP6111SVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP6111SVT-13 meets industry standards.
7.What is the process for return or replacement of DMP6111SVT-13?
All DMP6111SVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP6111SVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP6111SVT-13 part is unused and in its original packaging.
Return procedure for DMP6111SVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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