Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMP6111SVT-7

Part No.:
DMP6111SVT-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
SOT-23-6 Thin, TSOT-23-6
Datasheet:
AetrixDMP6111SVT-7.pdf
Description:
MOSFET BVDSS: 41V~60V TSOT26 T&R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,580

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMP6111SVT-7 from Diodes Incorporated is a 60V P-channel enhancement-mode MOSFET in TSOT26 package, featuring 115mΩ RDS(ON) at VGS = −10V, −2.7A continuous drain current at 25°C, and 100% production-tested UIS capability. It serves as a high-efficiency power switch in DC-DC converters, backlighting circuits, and low-voltage power-management rails.

For engineers reviewing the DMP6111SVT-7 datasheet, DMP6111SVT-7 pinout, DMP6111SVT-7 application, or DMP6111SVT-7 equivalent, key selection criteria include verified RDS(ON) vs. temperature behavior, gate charge (Qg = 23.2nC at VGS = −10V), body diode recovery (tRR = 23ns), thermal resistance (RθJA = 110°C/W on FR-4), and automotive-qualified variant availability (DMP6111SVTQ).

Technical Context

This P-channel MOSFET operates with a gate threshold voltage (VGS(TH)) between −1V and −3V, enabling robust turn-on control from standard logic-level drivers. Its low input capacitance (Ciss = 1283pF) and fast switching times (tD(ON) = 5.1ns, tF = 22.7ns) support high-frequency operation in synchronous buck and load-switch topologies.

The device integrates a low-VSD body diode (−0.8V to −1.2V at −1A) and supports repetitive avalanche energy up to 16.9mJ (L = 0.1mH). Its TSOT26 package delivers 8.2°C/W junction-to-case thermal resistance and meets JEDEC AEC-Q reliability standards for industrial and automotive-qualified derivatives.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS −60V - Withstands up to 60V drain-source blocking voltage in off-state, suitable for 48V system rails and industrial power supplies.
RDS(ON) 115mΩ @ VGS = −10V - Enables <1.2W conduction loss at −2.7A, critical for thermally constrained portable and LED driver designs.
Qg 23.2nC @ VGS = −10V - Determines gate drive power requirement and switching transition time in PWM-controlled applications.
tRR 23ns - Limits reverse-recovery losses during hard commutation, directly impacting efficiency in synchronous rectification.
RθJA 110°C/W - Defines maximum junction temperature rise under natural convection on minimal FR-4 layout; derating required above 70°C ambient.
IAS −18.4A - Supports unclamped inductive switching events without failure, essential for relay driving and motor control snubbing.
VGS(TH) −1V to −3V - Ensures reliable turn-on with −5V or −10V gate drive while avoiding false triggering near ground potential.

Pinout & Package

Package: TSOT26 - ultra-thin surface-mount package (2.9mm × 1.6mm × 0.6mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1 (S) Source Main current return path; tied to system ground or high-side rail reference in high-side switch configurations.
2 (G) Gate Control terminal; requires negative bias relative to source to enhance channel; low Ciss enables fast edge rates.
3 (D) Drain Power output node; connects to load or inductor; handles full switched current and avalanche energy during transients.
4 (S) Source (tie bar) Second source connection for improved current sharing and thermal conduction; electrically identical to Pin 1.
5 (D) Drain (tie bar) Second drain connection enhancing thermal dissipation and reducing package inductance in high-di/dt switching.
6 (G) Gate (tie bar) Redundant gate terminal improving gate drive integrity and reducing series resistance in high-frequency layouts.

Key Features

Feature Design Value
100% UIS tested Guarantees robustness against inductive kickback without external snubbers in relay, solenoid, or motor gate-drive circuits.
Low RDS(ON) at −4.5V 145mΩ enables use with 5V microcontroller outputs in load-switch applications without level-shifting circuitry.
Fast tF/tR 22.7ns fall time minimizes overlap conduction loss in synchronous buck converters operating >500kHz.
Green packaging Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) meets strict environmental compliance mandates.
AEC-Q qualified variant DMP6111SVTQ shares identical electrical specs and package, enabling drop-in qualification for automotive infotainment and body electronics.

Applications

LED Backlight Control USB-C Load Switch

Use Scenario: Driving white LED strings in notebook displays using PWM dimming at 1–20kHz.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling current flow into LED anodes; operates in linear or saturated mode depending on dimming duty cycle.

Use Value: Low RDS(ON) reduces power loss in compact display bezels; fast tF prevents visible PWM artifacts during rapid brightness transitions.

Use Scenario: Enabling/disabling VBUS power delivery in USB-C receptacles per USB PD specification.

IC Role / Device Role / Timing Role: Load switch isolating downstream ports; controlled by system PMIC or MCU GPIO with −5V gate drive.

Use Value: 145mΩ RDS(ON) at −4.5V ensures <30mW loss at 3A, meeting USB-C thermal limits; low Qgd (4.2nC) prevents shoot-through during hot-plug transitions.

Industrial DC-DC Converter Automotive Body Control Module

Use Scenario: Synchronous rectifier in non-isolated buck converter powering 3.3V/5V rails from 12V/24V input.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by complementary gate signal referenced to source.

Use Value: 23ns tRR and low VSD reduce reverse-recovery loss by >40% versus discrete diodes, improving efficiency at light loads.

Use Scenario: Powering window lift motors, mirror heaters, or interior lighting via centralized BCM outputs.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated avalanche handling; controlled by CAN/LIN interface MCU.

Use Value: 16.9mJ EAS withstands inductive flyback from 100W motor loads; AEC-Q qualified variant (DMP6111SVTQ) supports ASIL-B functional safety requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN601DWK-7 RDS(ON) = 130mΩ @ −4.5V; higher Ciss (1450pF); same TSOT26 package. Slightly lower efficiency in 5V-gate-driven load switches; marginally slower switching due to higher input capacitance. Prefer when cost sensitivity outweighs 15mΩ RDS(ON) penalty and gate drive strength is ample.
SI2301DS-T1-E3 RDS(ON) = 110mΩ @ −4.5V; lower ID rating (−2.3A); different pinout (G-D-S sequence). Not pin-compatible; requires PCB redesign; better suited for space-constrained 2A-class loads with tighter RDS(ON) tolerance. Select only if board layout allows re-routing and thermal margin permits 2.3A continuous operation.

Compared with DMN601DWK-7 and SI2301DS-T1-E3, DMP6111SVT-7 offers superior UIS ruggedness (18.4A IAS), lower Qg, and direct compatibility with automotive-qualified variants-making it optimal for industrial and automotive-adjacent power switches demanding reliability and design reuse.

Availability

DMP6111SVT-7 is available at Aetrix Electronics and suitable for LED backlighting, USB-C load switching, and industrial DC-DC converter designs requiring stable component supply, consistent parametric performance across temperature, and long-term lifecycle support.

Supply support for DMP6111SVT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with design centers across Asia, Europe, and the U.S., serving industrial, computing, consumer, and automotive markets.

DMP6111SVT-7 belongs to Diodes' high-reliability power MOSFET product line, engineered for efficient, rugged switching in space-constrained power-management systems where thermal performance and avalanche immunity are critical.

FAQ

What is the maximum safe operating junction temperature for DMP6111SVT-7?

The absolute maximum junction temperature is +150°C, and the device is rated for continuous operation across −55°C to +150°C. Derating begins at +70°C ambient on standard FR-4; at 25°C ambient, full −2.7A current is supported. Thermal design must account for RθJA = 110°C/W (minimum pad layout) or 78°C/W (1-inch² copper).

Can DMP6111SVT-7 be used as a high-side switch with 3.3V logic control?

No-its VGS(TH) range of −1V to −3V requires a negative gate-source voltage to fully enhance. A 3.3V GPIO cannot produce sufficient VGS; a dedicated gate driver generating −4.5V or −10V (e.g., TC4427 with inverting configuration) is required for reliable saturation.

Does DMP6111SVT-7 have built-in ESD protection?

The datasheet does not specify on-chip ESD protection structures. The device exhibits ±20V gate-source rating and passes JEDEC AEC-Q stress tests, but external TVS or RC filtering is recommended on gate lines in noisy environments such as automotive or industrial motor-control applications.

How does the TSOT26 package affect thermal performance compared to SO-8 or TO-252?

TSOT26 has higher thermal resistance (RθJA = 110°C/W) than SO-8 (≈60°C/W) or TO-252 (≈50°C/W), limiting power dissipation to ~1.1W at 25°C ambient. However, its small footprint (2.9mm × 1.6mm) suits portable and dense PCBs where area is constrained more than thermal headroom.

DMP6111SVT-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
115mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
23.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1283 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
1.1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TSOT-26

DMP6111SVT-7 FAQ

1.How can I place an order for DMP6111SVT-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP6111SVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP6111SVT-7 reliable?

The price and inventory of DMP6111SVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP6111SVT-7 is usually 5 days.

3.What payment methods are accepted for DMP6111SVT-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP6111SVT-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP6111SVT-7?

DMP6111SVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP6111SVT-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP6111SVT-7?

For technical support, including DMP6111SVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP6111SVT-7 requirements.

6.How does Aetrix verify that DMP6111SVT-7 is sourced from the original manufacturer or authorized distributors?

All DMP6111SVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP6111SVT-7 meets industry standards.

7.What is the process for return or replacement of DMP6111SVT-7?

All DMP6111SVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP6111SVT-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP6111SVT-7 part is unused and in its original packaging.

Return procedure for DMP6111SVT-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMP6111SVT-7 Tags

  • DMP6111SVT-7
  • DMP6111SVT-7 PDF
  • DMP6111SVT-7 Datasheet
  • DMP6111SVT-7 Specifications
  • DMP6111SVT-7 Images
  • Diodes Incorporated
  • Diodes Incorporated DMP6111SVT-7
  • Buy DMP6111SVT-7
  • DMP6111SVT-7 Price
  • DMP6111SVT-7 Distributor
  • DMP6111SVT-7 Supplier
  • DMP6111SVT-7 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER