My Inquiry
My Account
Diodes Incorporated DMP6250SFDF-7
- Part No.:
- DMP6250SFDF-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMP6250SFDF-7.pdf
- Description:
- MOSFET BVDSS: 41V-60V U-DFN2020-
- Quantity:
- Payment:
- Shipping:
Inventory:2,275
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMP6250SFDF-7 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, rated for -60V VDSS, 155 mΩ RDS(ON) @ VGS = -10V, and -3.2A continuous drain current at +25°C. It serves as a high-efficiency power switch in battery management and DC-DC converter topologies where low gate threshold and fast switching are critical.
For engineers reviewing the DMP6250SFDF-7 datasheet, DMP6250SFDF-7 pinout, DMP6250SFDF-7 application, or DMP6250SFDF-7 equivalent, key selection criteria include verified RDS(ON) at -4.5V (-240 mΩ), thermal resistance (RθJA = 63 °C/W with 1-inch2 copper), and JEDEC-qualified reliability for industrial power management designs.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while maintaining controlled QG (8.9 nC @ VGS = -10V) and fast switching (tF = 37.8 ns). Its -1 to -3 V gate threshold enables direct logic-level drive from 3.3V/5V controllers without level shifting.
Designed for unidirectional high-side switching, it integrates a body diode with VSD = -0.7 to -1.2 V at -2 A and exhibits low Ciss (612 pF) and Crss (26 pF) to minimize Miller-induced turn-off delay in synchronous buck or load-switch configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -60 V - Maximum blocking voltage before avalanche conduction in high-side switch applications. |
| RDS(ON) | 155 mΩ @ VGS = -10V - Confirmed on-resistance enabling ≤0.5 W conduction loss at -2 A in compact PCB layouts. |
| ID (continuous) | -3.2 A @ TA = +25°C - Sustained current capability with 2.0 W total power dissipation under enhanced thermal pad layout. |
| QG | 8.9 nC @ VGS = -10V - Gate charge value directly determining driver strength requirement for <100 ns switching transitions. |
| Ciss/Coss | 612 pF / 36 pF - Input/output capacitance values defining gate drive energy and reverse recovery behavior in hard-switched converters. |
| RθJA | 63 °C/W - Junction-to-ambient thermal resistance with 1-inch² copper, enabling operation up to +70°C ambient without derating. |
Pinout & Package
U-DFN2020-6 (Type F) surface-mount package: 2.0 mm × 2.0 mm footprint, 0.6 mm nominal height, NiPdAu-plated terminals, moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Bottom View) | Source (S) | Primary current return path; electrically tied to exposed thermal pad for enhanced heat dissipation. |
| Pin 2 | Drain (D) | Main power output node; connected internally to die backside and thermal pad for low-inductance high-current routing. |
| Pin 3 | Gate (G) | Control input requiring ≤±20 V rating; low Ciss enables efficient drive from microcontroller GPIOs. |
| Pin 4 | Source (S) | Redundant source connection to reduce bond wire inductance and improve current sharing in parallel layouts. |
| Pin 5 | Drain (D) | Secondary drain terminal providing symmetrical current distribution and lower loop inductance in high-frequency switching. |
| Pin 6 | Source (S) | Third source tie point ensuring uniform thermal gradient across the die and minimizing hot spots during pulsed operation. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at -4.5 V | 240 mΩ - Enables direct interface with 3.3 V logic controllers without gate boosting circuitry. |
| Fast switching speed | tF = 37.8 ns - Reduces switching losses in 500 kHz–1 MHz DC-DC converters by limiting transition time. |
| Low gate charge | QG = 4.3 nC @ VGS = -4.5 V - Minimizes driver power consumption and simplifies gate driver IC selection. |
| JEDEC-qualified reliability | Qualified per AEC-Q standards for high-reliability industrial use - Validated for >1000 hours HTOL at 150°C junction temperature. |
| Green packaging | Halogen- and antimony-free molding compound (Br+Cl <1500 ppm, Sb <1000 ppm) - Compliant with IPC-1752A material declaration requirements. |
Applications
| Battery Protection Circuit | Load Switch in Portable Devices |
|---|---|
|
Use Scenario: Reverse polarity and overcurrent protection in Li-ion battery packs for medical wearables. IC Role / Device Role / Timing Role: High-side P-MOSFET switch controlling main power path with fast fault response (<100 ns turn-off). Use Value: 240 mΩ RDS(ON) at -4.5 V ensures ≤100 mW conduction loss at 2 A, extending runtime without thermal throttling. |
Use Scenario: Controlled power-up sequencing for USB-C peripheral modules in handheld test equipment. IC Role / Device Role / Timing Role: Load switch enabling soft-start via gate slew-rate control and inrush current limiting. Use Value: Low Ciss (612 pF) and controlled QGD/QGS ratio support precise 10–100 μs turn-on timing without external RC networks. |
| Synchronous Buck Converter High-Side Switch | Industrial 24 V Power Rail Switching |
|
Use Scenario: High-efficiency 12 V → 3.3 V step-down conversion in programmable logic controller (PLC) I/O modules. IC Role / Device Role / Timing Role: Upper switch in synchronous rectified topology operating at 1 MHz with 50% duty cycle. Use Value: 37.8 ns fall time and 79.8 ns tD(OFF) enable clean dead-time control, reducing shoot-through risk in high-frequency operation. |
Use Scenario: Remote ON/OFF control of 24 V auxiliary rails in factory automation sensors and actuators. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays, driven directly by PLC digital outputs. Use Value: -60 V VDSS and -12 A pulsed rating provide 2× safety margin against 24 V rail transients (IEC 61000-4-4, ±2 kV EFT). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG6250UFDF-7 | Same die, identical RDS(ON) and QG, but in U-DFN2020-6 (Type U) package with different pinout (G-D-S vs D-G-S). | Requires PCB redesign due to swapped gate/drain positions; not drop-in compatible. | Select only when migrating legacy designs using Type U footprint and verifying gate drive loop inductance impact. |
| SI2301DDS-T1-GE3 | Higher RDS(ON) (200 mΩ @ -4.5 V), lower VDSS (-20 V), larger SOT-23 package (RθJA = 220 °C/W). | Limited to ≤12 V systems; unsuitable for 24 V industrial rails or battery protection above 15 V. | Acceptable only for cost-sensitive, low-power 3.3/5 V logic-level switching where thermal headroom exceeds 40°C. |
Compared with DMG6250UFDF-7 and SI2301DDS-T1-GE3, DMP6250SFDF-7 delivers optimal balance of low-voltage drive capability, 60 V robustness, and 2.0 W thermal performance in a 2 mm × 2 mm footprint-making it uniquely suited for space-constrained, high-reliability 24 V industrial and battery-powered applications.
Availability
DMP6250SFDF-7 is available at Aetrix Electronics and suitable for battery management systems, DC-DC converter high-side switches, and industrial 24 V load switching requiring stable component supply and long-term lifecycle continuity.
Supply support for DMP6250SFDF-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
DMP6250SFDF-7 belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, low-voltage power switching in portable, industrial, and automotive-adjacent applications demanding JEDEC reliability and green packaging compliance.
FAQ
What is the maximum safe operating junction temperature for DMP6250SFDF-7?
The absolute maximum junction temperature is +150°C, and the device is characterized for continuous operation up to this limit. Thermal design must ensure TJ remains below +150°C under worst-case ambient and power dissipation conditions, using the specified 1-inch² copper pad layout that achieves RθJA = 63 °C/W.
Can DMP6250SFDF-7 be used in a synchronous rectifier configuration?
No-DMP6250SFDF-7 is a P-channel enhancement-mode MOSFET intended for high-side switching, not synchronous rectification. Its body diode forward voltage (VSD = -0.7 to -1.2 V) and lack of optimized reverse recovery characteristics make it unsuitable as a low-loss freewheeling device in buck or flyback secondary-side applications.
Is the U-DFN2020-6 (Type F) package lead-free and RoHS compliant?
Yes-DMP6250SFDF-7 uses NiPdAu-plated copper leadframe and halogen-free molding compound, fully complying with EU RoHS Directive 2015/863/EU (RoHS 3) and meeting Diodes Incorporated's "Green" definition (Br+Cl <1500 ppm, Sb <1000 ppm).
Does DMP6250SFDF-7 require a gate resistor for stability in switching applications?
A gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent unintended oscillation, especially when driving from low-impedance sources. The device's 13 Ω intrinsic gate resistance and 26 pF Crss support stable operation but do not eliminate need for external damping in high-dI/dt layouts.
DMP6250SFDF-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 155mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 612 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 800mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMP6250SFDF-7 FAQ
1.How can I place an order for DMP6250SFDF-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMP6250SFDF-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMP6250SFDF-7 reliable?
The price and inventory of DMP6250SFDF-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP6250SFDF-7 is usually 5 days.
3.What payment methods are accepted for DMP6250SFDF-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP6250SFDF-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMP6250SFDF-7?
DMP6250SFDF-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMP6250SFDF-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMP6250SFDF-7?
For technical support, including DMP6250SFDF-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP6250SFDF-7 requirements.
6.How does Aetrix verify that DMP6250SFDF-7 is sourced from the original manufacturer or authorized distributors?
All DMP6250SFDF-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP6250SFDF-7 meets industry standards.
7.What is the process for return or replacement of DMP6250SFDF-7?
All DMP6250SFDF-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMP6250SFDF-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMP6250SFDF-7 part is unused and in its original packaging.
Return procedure for DMP6250SFDF-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMP6250SFDF-7 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
