Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMP6350S-13

Part No.:
DMP6350S-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixDMP6350S-13.pdf
Description:
MOSFET P-CH 60V 1.5A SOT23
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,687

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMP6350S-13 from Diodes Incorporated is a 60V P-channel enhancement-mode MOSFET in SOT23 package, featuring RDS(ON) = 350 mΩ @ VGS = −10 V and −1.5 A continuous drain current at TA = +25°C. It serves as a high-efficiency power switch in low-voltage DC-DC converters and battery charging circuits where compact size and low conduction loss are critical.

For engineers reviewing the DMP6350S-13 datasheet, DMP6350S-13 pinout, DMP6350S-13 application, or DMP6350S-13 equivalent, key selection criteria include verified −60 V VDSS, gate threshold voltage range (−1.0 to −3.0 V), thermal resistance (RθJA = 176 °C/W on FR-4), body diode forward voltage (−0.8 to −1.2 V), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This P-channel MOSFET operates with negative gate drive relative to source, enabling high-side switching without level-shifting circuitry. Its low input capacitance (Ciss = 206 pF) and fast switching times (tD(ON) = 3.6 ns, tF = 7.3 ns) support efficient operation in 500 kHz–1 MHz DC-DC topologies.

The device integrates a robust body diode with tRR = 8.2 ns and QRR = 2.7 nC, suitable for synchronous rectification and flyback snubberless designs. Thermal performance is validated under two PCB mounting conditions: 0.72 W (RθJA = 176 °C/W) on minimal pad layout and 1.17 W (RθJA = 108 °C/W) with 1-inch² copper pour.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS −60 V - Withstands up to −60 V drain-to-source voltage before avalanche breakdown, enabling use in 48 V bus and industrial power rails.
RDS(ON) 350 mΩ @ VGS = −10 V - Delivers ≤0.53 W conduction loss at −1.5 A, critical for thermally constrained portable adapters.
ID (max) −1.5 A @ TA = +25°C - Supports sustained load current in space-limited battery management ICs and USB PD sink circuits.
Ciss 206 pF @ VDS = −30 V - Enables fast turn-on with low gate drive energy, reducing switching losses in high-frequency buck regulators.
tRR 8.2 ns - Minimizes reverse recovery charge (QRR = 2.7 nC), reducing EMI and cross-conduction risk in synchronous rectifier stages.
VGS(TH) −1.0 to −3.0 V - Ensures reliable turn-on with standard logic-level microcontrollers or PMIC gate drivers operating down to −3.3 V.
TJ Range −55 to +150 °C - Qualified per AEC-Q101, supporting under-hood automotive modules and industrial motor control interfaces.

Pinout & Package

Package: SOT23 - Surface-mount plastic package with matte tin–annealed copper leadframe, UL 94V-0 rated, moisture sensitivity level 1, weight ≈0.009 g.

Pin/Terminal Circuit Role Design Meaning
Drain (D) High-current output node Connected to load or power rail; handles full switched current and dissipates conduction/switching loss.
Gate (G) Control input Receives negative voltage relative to source to modulate channel conductivity; requires <4.1 nC total gate charge for full turn-on.
Source (S) Reference terminal Biased at system ground or positive rail in high-side configuration; defines VGS reference and carries return current.

Key Features

Feature Design Value
Low RDS(ON) 350 mΩ @ −10 V enables <0.5 W dissipation at 1.5 A, reducing heatsink requirements in portable power supplies.
Fast switching speed tD(OFF) = 12.3 ns and tF = 7.3 ns minimize dead-time losses in synchronous buck converters operating >500 kHz.
AEC-Q101 qualified Validated for automotive applications including infotainment power sequencing and ADAS camera module bias control.
Green packaging Halogen- and antimony-free molding compound (<900 ppm Br+Cl, <1000 ppm Sb) meets IEC 61249-2-21 and RoHS 2 compliance.
Low leakage IDSS ≤ −1.0 μA at −60 V ensures minimal standby power loss in always-on battery backup circuits.

Applications

Battery Charging Circuit USB-C Power Delivery Sink

Use Scenario: Controls charging path from adapter to Li-ion cell bank in portable medical devices and wearables.

IC Role / Device Role / Timing Role: High-side P-channel switch enabling reverse current blocking and precise charge enable/disable timing.

Use Value: Low RDS(ON) minimizes voltage drop across switch, preserving charging efficiency; AEC-Q101 rating supports field-reliable deployment.

Use Scenario: Implements VBUS discharge and overvoltage protection in USB-C PD sink controllers for laptops and docking stations.

IC Role / Device Role / Timing Role: Fast-turnoff power switch triggered by PD controller fault signals to isolate VBUS within microseconds.

Use Value: 8.2 ns body diode tRR prevents shoot-through during dynamic load steps; −60 V rating accommodates 20 V PD3.1 extended power ranges.

DC-DC Buck Converter High-Side Switch Portable Power Adapter Load Switch

Use Scenario: Serves as upper switch in non-synchronous buck regulator for FPGA core voltage (1.0–1.2 V @ 3 A).

IC Role / Device Role / Timing Role: Voltage-controlled current path modulated by PWM signal; gate driven by dedicated high-side driver IC.

Use Value: 206 pF Ciss reduces gate drive power consumption; 176 °C/W RθJA allows stable operation on 2 oz copper FR-4 without thermal vias.

Use Scenario: Enables/disables 5 V/9 V output rails in multi-voltage wall adapters used in IoT gateways and smart home hubs.

IC Role / Device Role / Timing Role: Standby load switch controlled by MCU GPIO; provides soft-start via gate resistor network.

Use Value: −1.0 to −3.0 V VGS(TH) ensures clean turn-on with 3.3 V logic; 0.009 g mass supports ultra-thin adapter mechanical design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN601WK-7 RDS(ON) = 280 mΩ @ −10 V, but rated only to −40 V VDSS; higher ID = −2.0 A. Not suitable for 48 V systems; acceptable in 24 V industrial controls or 5 V/12 V consumer adapters. Select when higher current and lower RDS(ON) are prioritized over 60 V rating and AEC-Q101 qualification.
SI2301DS-T1-BE3 RDS(ON) = 200 mΩ @ −4.5 V, but VDSS = −20 V and no AEC-Q101 certification. Limited to low-voltage logic-level switching (e.g., 3.3 V MCU I/O protection); unsuitable for automotive or 24+ V power rails. Choose for cost-sensitive, non-automotive applications requiring lowest possible gate drive voltage (−2.5 V typical VGS(TH)).

Compared with DMN601WK-7 and SI2301DS-T1-BE3, DMP6350S-13 uniquely balances −60 V rating, AEC-Q101 qualification, and 350 mΩ RDS(ON) in SOT23-making it the only option among the three qualified for automotive body electronics and 48 V telecom power modules.

Availability

DMP6350S-13 is available at Aetrix Electronics and suitable for battery charging circuits, DC-DC converters, and portable power adaptors requiring stable component supply across production lifecycles.

Supply support for DMP6350S-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The DMP6350S belongs to Diodes' high-reliability power MOSFET product line, engineered specifically for space-constrained, high-efficiency power management in automotive, industrial, and portable electronics.

FAQ

What is the maximum safe operating junction temperature for DMP6350S-13?

The absolute maximum junction temperature is +150°C, with derating required above +25°C ambient. At TA = +70°C, continuous drain current drops to −1.2 A per datasheet Table 1. Thermal design must account for RθJA = 176 °C/W on standard FR-4 and RθJC = 34 °C/W to case.

Can DMP6350S-13 be used in a synchronous rectifier configuration?

Yes-the integrated body diode has tRR = 8.2 ns and QRR = 2.7 nC, enabling use in low-duty-cycle synchronous rectification. However, external gate control is required since it lacks integrated driver logic; pairing with a dedicated gate driver like the AP2112K is recommended for optimal timing.

Is DMP6350S-13 compatible with lead-free reflow soldering processes?

Yes-it is fully RoHS-compliant and qualified for lead-free reflow per J-STD-020. The matte tin–annealed leadframe supports peak temperatures up to 260°C for 10 seconds. Moisture sensitivity level is 1, so no baking is required prior to assembly.

Does DMP6350S-13 require a gate resistor for stability in switching applications?

A gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 11 pF) and PCB trace inductance. The datasheet specifies Rg = 6 Ω for switching time characterization; omitting it may cause overshoot and increased EMI in high-dV/dt environments.

DMP6350S-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
350mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
4.1 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
206 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
720mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

DMP6350S-13 FAQ

1.How can I place an order for DMP6350S-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP6350S-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP6350S-13 reliable?

The price and inventory of DMP6350S-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP6350S-13 is usually 5 days.

3.What payment methods are accepted for DMP6350S-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP6350S-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP6350S-13?

DMP6350S-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP6350S-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP6350S-13?

For technical support, including DMP6350S-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP6350S-13 requirements.

6.How does Aetrix verify that DMP6350S-13 is sourced from the original manufacturer or authorized distributors?

All DMP6350S-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP6350S-13 meets industry standards.

7.What is the process for return or replacement of DMP6350S-13?

All DMP6350S-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP6350S-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP6350S-13 part is unused and in its original packaging.

Return procedure for DMP6350S-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMP6350S-13 Tags

  • DMP6350S-13
  • DMP6350S-13 PDF
  • DMP6350S-13 Datasheet
  • DMP6350S-13 Specifications
  • DMP6350S-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMP6350S-13
  • Buy DMP6350S-13
  • DMP6350S-13 Price
  • DMP6350S-13 Distributor
  • DMP6350S-13 Supplier
  • DMP6350S-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER