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Diodes Incorporated DMP65H13D0HSS-13

Part No.:
DMP65H13D0HSS-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDMP65H13D0HSS-13.pdf
Description:
MOSFET BVDSS: 501V~650V SO-8 T&R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,866

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Product details

Overview

DMP65H13D0HSS-13 from Diodes Incorporated is a 600V P-channel enhancement-mode MOSFET in SO-8 package, rated for -0.25A continuous drain current at 25°C, with RDS(ON) = 13Ω @ VGS = -10V and BVDSS = -600V. It serves as a high-voltage, low-current switching device in AC-DC converters, backlight inverters, and motor control circuits where space-constrained, high-BV, logic-level-compatible P-FETs are required.

For engineers reviewing the DMP65H13D0HSS-13 datasheet, DMP65H13D0HSS-13 pinout, DMP65H13D0HSS-13 application, or DMP65H13D0HSS-13 equivalent, key selection criteria include verified -600V blocking capability, SO-8 thermal performance (RθJA = 100°C/W on minimal pad), body diode recovery time (tRR = 160ns), and gate charge (Qg = 13.4nC) for PWM-driven low-duty-cycle switching.

Technical Context

This MOSFET employs a trench-gate P-channel silicon process optimized for high-voltage ruggedness and low gate charge. Its -600V BVDSS rating enables direct use in 400V DC bus applications without series stacking, while its -4V typical VGS(TH) allows compatibility with standard -5V/-10V gate drivers.

The device exhibits low Ciss (582pF) and Crss (3.3pF), supporting fast turn-on (tD(ON) = 16ns) and controlled dv/dt (5V/ns peak diode recovery), making it suitable for flyback snubberless topologies and isolated LED driver secondary-side switches.

Key Specifications

Parameter Value and Actual Design Meaning
BVDSS -600V - Withstands full 400V DC bus + 50% transient margin without avalanche conduction.
RDS(ON) 13Ω max @ VGS = -10V - Delivers ≤3.25mW conduction loss at -0.25A, enabling thermally constrained PCB layouts.
Qg 13.4nC - Enables efficient 100kHz–500kHz PWM switching with <1µs total transition time using 3Ω gate resistor.
tRR 160ns - Limits voltage overshoot during body diode commutation in discontinuous conduction mode (DCM) flybacks.
RθJA 100°C/W - Requires minimum recommended SO-8 pad layout to sustain 1.25W dissipation at ambient ≤70°C.
VGS(TH) -3V typ - Ensures reliable turn-on with industry-standard -5V logic-level gate drivers, avoiding partial enhancement.

Pinout & Package

Package: SO-8 (Standard B), surface-mount, green molding compound (UL 94V-0), matte tin-plated copper leadframe.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4 Source (S) Common source connection for internal parallel FET die; tied to PCB ground plane for thermal and EMI control.
5, 6, 7, 8 Drain (D) High-voltage output node; electrically isolated from source by 600V-rated oxide; connects to transformer primary or bus rail.
G (Gate) Control input Exposed gate terminal on Pin 1 per top-view marking diagram; requires <30V absolute max swing and low-inductance routing.

Key Features

Feature Design Value
P-channel high-voltage architecture Eliminates need for high-side gate driver in buck-derived topologies; simplifies biasing in negative-rail systems.
Low Crss / Ciss ratio (3.3pF / 582pF) Reduces Miller-induced shoot-through risk and improves gate drive efficiency in hard-switched converters.
160ns body diode tRR Enables clean zero-current switching in DCM flyback secondaries without external snubbers.
Lead-free, halogen-free, antimony-free construction Meets IPC-J-STD-020 Level 3 moisture sensitivity and automotive-grade environmental compliance requirements.

Applications

AC-DC Adapter Secondary Switch CCFL Backlight Inverter

Use Scenario: High-voltage switch in isolated flyback converter secondary side, operating at 60–100kHz with 12–24V output.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement or freewheeling switch controlling energy transfer timing and output regulation.

Use Value: -600V rating avoids series stacking; 13Ω RDS(ON) limits conduction loss to <10mW at 250mA load, improving light-load efficiency.

Use Scenario: Resonant half-bridge switch driving CCFL lamps in LCD monitor backlight systems.

IC Role / Device Role / Timing Role: High-side P-FET in resonant tank circuit, requiring precise dead-time control and fast body diode recovery.

Use Value: 160ns tRR minimizes voltage spikes during zero-crossing transitions; SO-8 footprint fits tight board spacing near lamp connectors.

Brushed DC Motor Brake Industrial Sensor Power Switch

Use Scenario: Dynamic braking path for 24V brushed DC motors in HVAC actuators and valve positioners.

IC Role / Device Role / Timing Role: Low-duty-cycle P-FET switch shorting motor terminals to dissipate kinetic energy as heat.

Use Value: -600V BVDSS withstands inductive kickback up to 300V; SO-8 thermal resistance supports intermittent 1W pulse dissipation.

Use Scenario: Remote power enable/disable for 4–20mA loop-powered industrial sensors in hazardous-area transmitters.

IC Role / Device Role / Timing Role: High-reliability, low-leakage (IDSS ≤ -1µA) power switch isolating sensor supply during fault conditions.

Use Value: -1µA IDSS ensures <100nA standby leakage across 10-year field life; RoHS/Green compliance meets IEC 61000-6-2 immunity requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage P-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN65H130SFD-13 N-channel counterpart with identical RDS(ON) (13Ω) and BVDSS (-600V), but requires high-side gate driver or bootstrap circuitry. Suitable only where N-FET topology is preferred (e.g., synchronous rectification with dedicated controller). Select when system already uses N-channel gate drivers and layout permits floating bias generation.
IPD65R130G7 650V superjunction P-FET with lower RDS(ON) (130mΩ), higher ID (10A), TO-252 package, and 10× higher Qg (65nC). Designed for high-current SMPS primary-side switching, not low-current auxiliary functions. Choose only if >1A continuous current and TO-252 thermal mass are required; not drop-in compatible.

Compared with DMN65H130SFD-13 and IPD65R130G7, DMP65H13D0HSS-13 uniquely balances ultra-low gate charge (13.4nC), SO-8 compactness, and -600V rating for space-limited auxiliary switches-where N-FET complexity or TO-252 footprint is prohibitive.

Availability

DMP65H13D0HSS-13 is available at Aetrix Electronics and suitable for AC-DC adapters, CCFL backlight inverters, and brushed DC motor brake circuits requiring stable component supply and long-term obsolescence management.

Supply support for DMP65H13D0HSS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

DMP65H13D0HSS-13 belongs to Diodes' high-voltage MOSFET product line, engineered specifically for cost-sensitive, space-constrained auxiliary power and lighting applications demanding robust 600V blocking and logic-level gate compatibility.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The DMP65H13D0HSS-13 supports -0.20A continuous drain current at TA = +70°C, derated from -0.25A at 25°C per its thermal resistance (RθJA = 100°C/W) and SO-8 minimum-pad layout. This reflects real-world operation on FR-4 boards with limited copper area, not ideal heatsink conditions.

Can this MOSFET be used in linear regulator applications?

No. The DMP65H13D0HSS-13 is characterized and qualified only for switching operation. Its Safe Operating Area (SOA) curve shows no DC or long-pulse capability beyond 1.25W, and its RDS(ON) variation with temperature (-0.5%/°C) makes stable linear regulation impractical without active compensation.

Is the body diode suitable for reverse polarity protection?

Yes-the integrated body diode has VSD = -0.7V to -1.3V at -0.25A and tRR = 160ns, enabling use as a reverse-battery protection element in low-current 24V systems. However, its -0.25A rating limits application to sub-5W loads with adequate thermal relief.

Does this part meet AEC-Q101 qualification?

No. The DMP65H13D0HSS-13 is not AEC-Q101 qualified. Diodes Incorporated explicitly states that automotive-grade versions require separate PPAP-capable part numbers and IATF 16949 manufacturing; this variant is intended for industrial and consumer applications only.

DMP65H13D0HSS-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
13Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
13.4 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
582 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.9W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

DMP65H13D0HSS-13 FAQ

1.How can I place an order for DMP65H13D0HSS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP65H13D0HSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP65H13D0HSS-13 reliable?

The price and inventory of DMP65H13D0HSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP65H13D0HSS-13 is usually 5 days.

3.What payment methods are accepted for DMP65H13D0HSS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP65H13D0HSS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP65H13D0HSS-13?

DMP65H13D0HSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP65H13D0HSS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP65H13D0HSS-13?

For technical support, including DMP65H13D0HSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP65H13D0HSS-13 requirements.

6.How does Aetrix verify that DMP65H13D0HSS-13 is sourced from the original manufacturer or authorized distributors?

All DMP65H13D0HSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP65H13D0HSS-13 meets industry standards.

7.What is the process for return or replacement of DMP65H13D0HSS-13?

All DMP65H13D0HSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP65H13D0HSS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP65H13D0HSS-13 part is unused and in its original packaging.

Return procedure for DMP65H13D0HSS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMP65H13D0HSS-13 Tags

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