Diodes Incorporated DMP65H20D0HSS-13

Overview

DMP65H20D0HSS from Diodes Incorporated is a 600V P-channel enhancement-mode MOSFET in SO-8 package, rated for -0.2A continuous drain current at 25°C, with R_DS(ON) = 20Ω @ V_GS = -10V and BVD_SS = -600V. It serves as a high-voltage, low-current switching device in AC-DC converters, backlighting circuits, and motor control stages where compact size and high breakdown voltage are critical.

For engineers reviewing the DMP65H20D0HSS datasheet, DMP65H20D0HSS pinout, DMP65H20D0HSS application, or DMP65H20D0HSS equivalent, key selection criteria include verified -600V blocking capability, SO-8 thermal performance under 1.25W (min pad layout), gate threshold stability across -55°C to +150°C, and body diode recovery time of 154ns for flyback snubberless operation.

Technical Context

This P-channel MOSFET operates in enhancement mode with a gate threshold voltage range of -2V to -4V (V_GS(TH)), enabling direct logic-level drive from microcontrollers or dedicated gate drivers in high-side switch configurations. Its low input capacitance (C_iss = 400pF) and fast switching (t_F = 76ns) support efficient operation in discontinuous conduction mode (DCM) flyback topologies.

The device features a fully isolated body diode with V_SD = -0.7V to -1.3V at -0.2A and exhibits normalized R_DS(ON) drift of ≤1.5× over -55°C to +150°C, ensuring predictable on-resistance behavior in thermally constrained industrial environments without active heatsinking.

Key Specifications

Pinout & Package

Package: SO-8 (Standard B), surface-mount, molded plastic case with matte tin–annealed copper leadframe, UL 94V-0 rated, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage P-channel MOSFET applications.

Compared with DMN65H20D0LQ-7 and IRF9540NPBF, DMP65H20D0HSS uniquely balances 600V capability, SO-8 manufacturability, and sub-0.2A current handling-making it optimal for cost-sensitive, low-power, high-voltage auxiliary switching where thermal headroom is managed via layout rather than package.

Availability

DMP65H20D0HSS is available at Aetrix Electronics and suitable for AC-DC auxiliary supplies, LED backlight bias control, and brushed DC motor enable circuits requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for DMP65H20D0HSS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' high-voltage power management portfolio, engineered specifically for compact, low-power, high-reliability auxiliary power conversion in consumer and industrial equipment where voltage robustness and regulatory compliance are mandatory.

FAQ

What is the maximum safe operating voltage for DMP65H20D0HSS in continuous DC conditions?

The absolute maximum drain-source voltage is -600V per datasheet DS43632 Rev. 3-2. For continuous DC operation, derating to ≤-480V is recommended per HTRB testing limits (Note 5). Applications exceeding -480V must implement transient overvoltage protection and validate under worst-case line surges per IEC 61000-4-5.

Can DMP65H20D0HSS be driven directly from a 3.3V microcontroller GPIO?

No-its gate threshold voltage ranges from -2V to -4V, requiring a negative gate-source bias to turn on. A 3.3V GPIO cannot produce negative V_GS; a charge pump or inverting driver (e.g., TC4427 configured as inverter) is required to generate -5V to -10V gate drive referenced to the source node.

Is the body diode suitable for freewheeling in inductive loads?

Yes-the body diode has V_SD = -0.7V to -1.3V at -0.2A and t_RR = 154ns, making it usable for low-energy freewheeling in small solenoids or relay coils. However, its 1.5A pulsed rating (I_SM) and 154ns recovery limit use to low-dI/dt (<100A/μs) scenarios without external snubbing.

Does DMP65H20D0HSS require a heatsink in typical SO-8 layouts?

No-under minimum recommended pad layout (R_θJA = 100°C/W), power dissipation is limited to 1.25W. At its max continuous I_D of -0.2A and R_DS(ON) of 20Ω, conduction loss is only 0.8W, resulting in ~80°C junction rise above ambient-within the -55°C to +150°C rating without added thermal mass.