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Diodes Incorporated DMP68D1LV-13

Part No.:
DMP68D1LV-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
SOT-563, SOT-666
Datasheet:
AetrixDMP68D1LV-13.pdf
Description:
MOSFET 2P-CH 60V 0.238A SOT563
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,951

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Product details

Overview

DMP68D1LV-13 from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in SOT563 package, rated for -60V VDSS, 8Ω RDS(ON) @ VGS = -5V, and -238mA continuous drain current at +25°C. It delivers low input capacitance (42pF Ciss) and fast switching (tD(ON) = 11ns), enabling high-efficiency power management in space-constrained DC-DC converters.

For engineers reviewing the DMP68D1LV-13 datasheet, DMP68D1LV-13 pinout, DMP68D1LV-13 application, or DMP68D1LV-13 equivalent, key selection criteria include verified dual-channel P-MOS topology, thermal resistance of 151°C/W under enhanced PCB layout, ESD protection, and JEDEC-qualified reliability for industrial power rails.

Technical Context

This dual P-channel MOSFET integrates two matched enhancement-mode transistors in a single SOT563 package with shared source terminals (S1/S2) and independent gates (G1/G2) and drains (D1/D2). Its gate threshold voltage range (-0.8V to -2.1V) enables robust turn-on control with standard logic-level drive.

The device operates across -55°C to +150°C junction temperature, supports pulsed drain currents up to -1A, and exhibits normalized RDS(ON) variation ≤1.7× over full temperature range. Its low 0.6nC total gate charge reduces driver power loss in high-frequency switching.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS -60V - Withstands reverse drain-source voltage up to 60V without breakdown, suitable for 48V rail protection.
RDS(ON) 8Ω max @ VGS = -5V - Ensures <190mW conduction loss at -100mA, critical for low-power load switching.
ID (continuous) -238mA @ TA = +25°C - Supports dual-channel load switching in battery-powered sensor nodes.
Ciss 42pF - Minimizes gate drive energy and improves switching efficiency above 1MHz.
Qg 0.6nC - Enables clean, low-loss turn-on with minimal gate driver stress in compact DC-DC controllers.
RθJA 151°C/W - Achieved with 1-inch² copper pad; allows 0.8W dissipation at +70°C ambient without derating.
VGS(TH) -0.8V to -2.1V - Guarantees reliable turn-on with 3.3V or 5V logic-compatible gate drive.

Pinout & Package

Package: SOT563 - 6-pin ultra-small surface-mount package (1.60 × 1.60 × 0.60 mm), molded green compound, halogen/antimony-free, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
S1 Source 1 Common source connection for first P-MOS channel; tied internally to S2 in dual configuration.
G1 Gate 1 Independent control terminal for first channel; requires negative VGS for turn-on.
D1 Drain 1 Output node for first channel; handles bidirectional current with integrated body diode (VSD = -0.8V).
S2 Source 2 Common source connection for second P-MOS channel; electrically tied to S1.
G2 Gate 2 Independent control terminal for second channel; enables synchronous dual-load control.
D2 Drain 2 Output node for second channel; isolated from D1 for independent load switching.

Key Features

Feature Design Value
Low RDS(ON) with high VDSS 8Ω @ -60V enables efficient 24–48V load switching without paralleling devices.
Matched dual-channel topology Identical electrical characteristics between channels simplify PCB layout and reduce BOM count.
JEDEC-qualified reliability Qualified to AEC-Q101 stress test standards, supporting long-term operation in industrial environments.
ESD protection HBM rating >2kV ensures robustness during handling and board assembly without added protection circuitry.
Green packaging Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) meets strict environmental compliance.

Applications

Load Switching in IoT Sensors Battery Protection Circuits

Use Scenario: Power gating individual sensors (e.g., temperature, humidity) in battery-powered edge nodes to extend runtime.

IC Role / Device Role / Timing Role: Dual-channel P-MOS load switch controlling power delivery to two independent peripherals.

Use Value: 8Ω RDS(ON) limits dropout to <240mV at 30mA, preserving battery voltage headroom while enabling zero-quiescent-current shutdown.

Use Scenario: Reverse-polarity and overvoltage protection in Li-ion battery packs for portable medical devices.

IC Role / Device Role / Timing Role: Back-to-back P-MOS configuration using D1/S1 and D2/S2 paths to block fault currents.

Use Value: Matched VGS(TH) ensures symmetrical turn-on, and -60V rating accommodates 2-cell (8.4V) and 3-cell (12.6V) stack transients.

DC-DC Converter Synchronous Rectification Industrial PLC I/O Module Protection

Use Scenario: High-side synchronous rectifier in non-isolated buck converters for 3.3V/5V point-of-load regulation.

IC Role / Device Role / Timing Role: P-channel MOSFET replacing Schottky diode to reduce conduction loss in low-VOUT designs.

Use Value: 42pF Ciss and 11ns tD(ON) support >2MHz switching, improving light-load efficiency by ≥15% vs. diode-based solutions.

Use Scenario: Channel isolation and short-circuit protection in 24V digital output modules for factory automation.

IC Role / Device Role / Timing Role: Dual independent switches driving solenoids or indicator LEDs with fault detection.

Use Value: -1A pulsed capability handles inductive kickback; 151°C/W RθJA sustains 0.5W dissipation during sustained 200mA loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN601DWK-7 Single P-MOS, same SOT563 package, identical -60V/-238mA rating but no dual-channel integration. Requires two devices for dual-load control, increasing PCB area and BOM count. Select when only one switch is needed or when channel independence is not required.
AO6401 Higher RDS(ON) (12Ω @ -4.5V), larger TSOP-6 package (3.05 × 1.65 mm), higher Ciss (60pF). Less suitable for ultra-compact layouts or high-frequency (>1MHz) operation due to larger size and capacitance. Choose if higher surge current tolerance (-2A) is prioritized over footprint and switching speed.

Compared with DMN601DWK-7 and AO6401, DMP68D1LV-13 uniquely delivers dual-channel functionality in the smallest footprint (SOT563), lowest gate charge (0.6nC), and tightest thermal resistance (151°C/W), making it optimal for miniaturized, high-efficiency power management where channel matching and layout density are critical.

Availability

DMP68D1LV-13 is available at Aetrix Electronics and suitable for DC-DC converters, battery protection circuits, and industrial I/O module design requiring stable component supply and long-term manufacturability.

Supply support for DMP68D1LV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.

DMP68D1LV belongs to Diodes' high-voltage P-channel MOSFET product line, engineered specifically for compact, high-efficiency load switching and power-path control in battery-powered and industrial systems.

FAQ

What is the maximum safe operating voltage for DMP68D1LV-13?

The absolute maximum drain-source voltage (VDSS) is -60V. Operation beyond this rating risks irreversible avalanche breakdown. For reliable 24V or 48V rail applications, a 20% derating margin is recommended, limiting continuous use to ≤-48V. Transient spikes must be clamped externally if exceeding -60V.

Can DMP68D1LV-13 be used in back-to-back configuration for bidirectional blocking?

Yes - its dual P-channel structure supports back-to-back connection (D1 to S2, D2 to S1) to block current in both directions. This configuration provides reverse-polarity and overvoltage protection in battery inputs, leveraging matched VGS(TH) and RDS(ON) for symmetrical conduction.

Is thermal performance affected by PCB layout for DMP68D1LV-13?

Yes - RθJA varies from 258°C/W (standard FR-4) to 151°C/W (1-inch² copper pad). To achieve rated 0.8W power dissipation, the SOT563 thermal pad must be connected to ≥100mm² internal copper pour with ≥4 thermal vias (0.3mm diameter) to inner ground planes.

Does DMP68D1LV-13 require external gate pull-up resistors?

No - gate threshold voltage (-0.8V to -2.1V) ensures turn-off when driven to 0V. However, for noise immunity in noisy environments, a 100kΩ pull-up to system VDD on G1/G2 is recommended to prevent unintended turn-on from floating gate conditions during power-up or reset.

DMP68D1LV-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 P-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
238mA (Ta)
Rds On (Max) @ Id, Vgs:
8Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:
42pF @ 30V
Power - Max:
500mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-563

DMP68D1LV-13 FAQ

1.How can I place an order for DMP68D1LV-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMP68D1LV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMP68D1LV-13 reliable?

The price and inventory of DMP68D1LV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMP68D1LV-13 is usually 5 days.

3.What payment methods are accepted for DMP68D1LV-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMP68D1LV-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMP68D1LV-13?

DMP68D1LV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMP68D1LV-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMP68D1LV-13?

For technical support, including DMP68D1LV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMP68D1LV-13 requirements.

6.How does Aetrix verify that DMP68D1LV-13 is sourced from the original manufacturer or authorized distributors?

All DMP68D1LV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMP68D1LV-13 meets industry standards.

7.What is the process for return or replacement of DMP68D1LV-13?

All DMP68D1LV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMP68D1LV-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMP68D1LV-13 part is unused and in its original packaging.

Return procedure for DMP68D1LV-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMP68D1LV-13 Tags

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