Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMPH1006UPSQ-13

Part No.:
DMPH1006UPSQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixDMPH1006UPSQ-13.pdf
Description:
MOSFET P-CH 12V 80A PWRDI5060-8
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,205

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMPH1006UPSQ-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for -12 V VDSS, 6 mΩ RDS(ON) @ VGS = -4.5 V, and -80 A continuous drain current at TC = +25°C. It serves as a high-current load switch in automotive battery management and DC-DC converter power stages.

For engineers reviewing the DMPH1006UPSQ-13 datasheet, DMPH1006UPSQ-13 pinout, DMPH1006UPSQ-13 application, or DMPH1006UPSQ-13 equivalent, key selection criteria include its AEC-Q101 qualification, 175°C junction rating, low RDS(ON) at -2.5 V gate drive, unclamped inductive switching capability, and thermal resistance of 1.0°C/W (junction-to-case).

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low on-resistance and fast switching in high-temperature automotive environments. Its gate threshold voltage (-0.4 to -1.0 V) enables robust turn-on with standard logic-level negative gate drive, while its 124 nC total gate charge (VGS = -8 V) supports controlled slew rate in load-switch applications.

The device integrates an intrinsic body diode with -0.7 to -1.1 V forward voltage at -1 A, and exhibits 17 mJ single-pulse avalanche energy (L = 0.1 mH). Its PowerDI5060-8 package features an exposed drain pad for direct thermal coupling to PCB copper, enabling 3.2 W power dissipation under 2 oz copper thermal bias.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS -12 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V automotive systems.
RDS(ON) 6 mΩ @ VGS = -4.5 V - Enables <1.4 W conduction loss at 60 A, critical for thermally constrained battery switches.
ID (continuous) -80 A @ TC = +25°C - Supports high-current loads without external heatsinking when mounted per recommended pad layout.
TJ max +175°C - Allows operation in engine bay or under-hood locations where ambient exceeds 125°C.
RθJC 1.0°C/W - Confirms efficient heat transfer from die to PCB copper via exposed drain pad.
Qg 72 nC @ VGS = -4.5 V - Determines gate driver current requirement for <100 ns switching transitions in synchronous buck topologies.
EAS 17 mJ - Quantifies ruggedness against inductive kickback during load dump or hot-swap events.

Pinout & Package

Package: PowerDI5060-8 - surface-mount, 8-terminal package with exposed drain pad (pins 1–4 and 6–8 are source/gate/drain terminals; pin 5 is thermal pad connected internally to drain).

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4 Source Common source connection; low-inductance parallel routing reduces shoot-through risk in half-bridge configurations.
5 Drain (Thermal Pad) Exposed metal pad electrically and thermally tied to drain; must be soldered to large copper area for thermal management.
6 Gate Control input; requires gate resistor (typically 10–47 Ω) to damp ringing due to 3.5 Ω gate resistance and 6334 pF Ciss.
7, 8 Drain Main high-current drain path; pins 7 and 8 connect internally to pin 5 for enhanced current handling and thermal spreading.

Key Features

Feature Design Value
AEC-Q101 qualified & PPAP capable Validated for automotive production use with full change control, IATF 16949 manufacturing, and traceable lot documentation.
100% unclamped inductive switching (UIS) rated Guarantees survival under worst-case inductive turn-off stress without external snubbers in battery disconnect circuits.
Low RDS(ON) at -2.5 V gate drive 8 mΩ @ VGS = -2.5 V enables reliable turn-on using simple open-drain controllers in space-constrained modules.
175°C maximum junction temperature Permits placement near heat sources (e.g., DC-DC inductors) without derating in under-hood ECUs.
Lead-free, halogen- and antimony-free "Green" construction Complies with RoHS 3 and automotive ELV directives; matte tin annealed finish ensures MIL-STD-202 solderability.

Applications

Notebook Battery Power Management Automotive DC-DC Converters

Use Scenario: High-side main battery disconnect switch in ultrabook platforms with dual-cell Li-ion packs.

IC Role / Device Role / Timing Role: P-channel load switch controlling battery-to-system power path; activated during sleep/wake transitions.

Use Value: 6 mΩ RDS(ON) limits voltage drop to <360 mV at 60 A, preserving system brown-out margin during peak CPU load.

Use Scenario: Synchronous rectifier in 12 V → 5 V/3.3 V buck converters for ADAS camera modules.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck stage; commutates at 500 kHz with fast tF = 94 ns.

Use Value: 1.0°C/W RθJC allows >3 W dissipation on 2 oz copper, eliminating need for discrete heatsinks in compact camera housings.

Engine Control Unit Load Switching Industrial 24 V Hot-Swap Controllers

Use Scenario: Isolation switch for fuel injector drivers in gasoline direct injection systems.

IC Role / Device Role / Timing Role: High-current P-channel switch protecting downstream solenoid drivers from battery transients.

Use Value: 17 mJ EAS withstands repetitive inductive flyback energy during injector pulse-width modulation without degradation.

Use Scenario: Back-to-back MOSFET configuration in redundant 24 V power supplies for factory automation PLCs.

IC Role / Device Role / Timing Role: One device used as reverse-polarity protection; second as inrush current limiter during hot-insertion.

Use Value: -175°C to +175°C operating range ensures stable RDS(ON) across industrial ambient swings (−40°C to +85°C board temp).

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMTH10H015LPSQ-13 Higher VDSS (-100 V), higher RDS(ON) (15 mΩ @ -4.5 V), same PowerDI5060-8 package Targeted at 48 V industrial systems; unsuitable for 12 V battery management due to excessive gate charge (210 nC) Select only if higher voltage blocking is required; avoid for automotive 12 V due to higher conduction loss and slower switching.
IPD250N12N3GATMA1 Same -12 V rating, lower RDS(ON) (2.5 mΩ), TO-263-7 package, no AEC-Q101 certification Requires larger PCB footprint and lacks PPAP support; not approved for automotive production programs Consider only for non-automotive industrial prototypes where AEC-Q101 is not mandated and thermal budget permits TO-263 mounting.

Compared with DMTH10H015LPSQ-13 and IPD250N12N3GATMA1, DMPH1006UPSQ-13 uniquely balances ultra-low on-resistance, AEC-Q101 compliance, and compact PowerDI5060-8 packaging-making it optimal for volume automotive load switching where space, reliability, and thermal efficiency are jointly constrained.

Availability

DMPH1006UPSQ-13 is available at Aetrix Electronics and suitable for notebook battery management, automotive DC-DC converters, and engine control unit load switching requiring stable component supply across extended temperature ranges and rigorous quality traceability.

Supply support for DMPH1006UPSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

DMPH1006UPSQ-13 belongs to Diodes' AEC-Q101-qualified PowerMOS portfolio, engineered specifically for high-current, high-temperature load switching in automotive power distribution systems.

FAQ

What is the maximum allowable gate-source voltage for DMPH1006UPSQ-13?

The absolute maximum VGS is ±8 V, as specified in the Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to -4.5 V for optimal RDS(ON) and -2.5 V for logic-level compatibility, both well within the safe range.

Does DMPH1006UPSQ-13 require a gate resistor, and if so, what value is recommended?

Yes-a series gate resistor is essential to damp ringing caused by the device's 3.5 Ω gate resistance and 6334 pF input capacitance. A 22 Ω resistor is typical for 500 kHz switching in DC-DC applications; values between 10 Ω and 47 Ω balance switching speed and EMI control based on PCB layout parasitics.

How is thermal performance affected when the exposed drain pad is not soldered to PCB copper?

Without soldering pin 5 (exposed drain pad) to a ≥1-inch² 2 oz copper area, RθJA degrades from 47°C/W to 86°C/W, reducing maximum continuous power dissipation from 3.2 W to 1.8 W. This can cause thermal runaway above 25 A in sustained operation, making proper pad layout mandatory for rated current.

Can DMPH1006UPSQ-13 be used in back-to-back configuration for AC load switching?

No-it is a unidirectional P-channel MOSFET with an intrinsic body diode oriented for DC load switching only. Back-to-back use would allow reverse current flow through the body diode during negative half-cycles, causing uncontrolled conduction and potential failure. Use two matched N-channel devices with external gate drive for true bidirectional blocking.

DMPH1006UPSQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
12 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
6mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
124 nC @ 8 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
6334 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
3.2W
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8

DMPH1006UPSQ-13 FAQ

1.How can I place an order for DMPH1006UPSQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMPH1006UPSQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMPH1006UPSQ-13 reliable?

The price and inventory of DMPH1006UPSQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMPH1006UPSQ-13 is usually 5 days.

3.What payment methods are accepted for DMPH1006UPSQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMPH1006UPSQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMPH1006UPSQ-13?

DMPH1006UPSQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMPH1006UPSQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMPH1006UPSQ-13?

For technical support, including DMPH1006UPSQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMPH1006UPSQ-13 requirements.

6.How does Aetrix verify that DMPH1006UPSQ-13 is sourced from the original manufacturer or authorized distributors?

All DMPH1006UPSQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMPH1006UPSQ-13 meets industry standards.

7.What is the process for return or replacement of DMPH1006UPSQ-13?

All DMPH1006UPSQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMPH1006UPSQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMPH1006UPSQ-13 part is unused and in its original packaging.

Return procedure for DMPH1006UPSQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMPH1006UPSQ-13 Tags

  • DMPH1006UPSQ-13
  • DMPH1006UPSQ-13 PDF
  • DMPH1006UPSQ-13 Datasheet
  • DMPH1006UPSQ-13 Specifications
  • DMPH1006UPSQ-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMPH1006UPSQ-13
  • Buy DMPH1006UPSQ-13
  • DMPH1006UPSQ-13 Price
  • DMPH1006UPSQ-13 Distributor
  • DMPH1006UPSQ-13 Supplier
  • DMPH1006UPSQ-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER