Diodes Incorporated DMPH3010LK3-13

Overview

DMPH3010LK3 from Diodes Incorporated is a P-channel enhancement-mode MOSFET rated for -30V V_DS, 7.5mΩ R_DS(ON) @ V_GS = -10V, and -50A continuous drain current at T_C = +25°C, operating up to +175°C junction temperature. It serves as a high-efficiency synchronous rectifier or load switch in automotive DC-DC converters and industrial power management circuits.

For engineers reviewing the DMPH3010LK3 datasheet, DMPH3010LK3 pinout, DMPH3010LK3 application, or DMPH3010LK3 equivalent, key selection criteria include its AEC-Q101 qualification, low R_DS(ON) at -4.5V gate drive, 100% production UIS testing, TO252 thermal performance (R_θJC = 1.0°C/W), and body diode recovery characteristics (t_RR = 27ns).

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss while maintaining fast switching speed (t_F = 95ns, t_D(OFF) = 255ns) and robust avalanche capability (E_AS = 113mJ). Its gate threshold voltage range (-1.1V to -2.1V) ensures stable turn-on under wide temperature variation (-55°C to +175°C).

The device features a low-output capacitance profile (C_oss = 988pF @ V_DS = -15V) and moderate gate charge (Q_g = 139nC @ V_GS = -10V), enabling efficient operation in high-frequency synchronous buck topologies with minimal Miller-induced shoot-through risk.

Key Specifications

Pinout & Package

Package: TO252 (DPAK), surface-mount, single-ended heat sink interface with exposed drain pad. Molded green compound, UL 94V-0 rated, 0.33g mass.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with DMTH3010LPS-13 and IPB80P03P4L-04, DMPH3010LK3 offers optimal balance of low R_DS(ON), TO252 footprint, and AEC-Q101 compliance-ideal for space-constrained automotive and industrial converters where 30V blocking suffices and thermal resistance below 1.5°C/W is required.

Availability

DMPH3010LK3 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial power management systems, and LED backlight drivers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMPH3010LK3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

The DMPH3010LK3 belongs to Diodes' AEC-Q101-qualified high-temperature MOSFET product line, engineered specifically for demanding power conversion roles in engine compartments, motor drives, and industrial controls where sustained +175°C operation is essential.

FAQ

What is the maximum continuous drain current at T_C = +100°C?

The DMPH3010LK3 supports -40A continuous drain current at case temperature +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO252 package under typical PCB copper area conditions (2oz, 1-inch square copper plate), and aligns with its 3.9W power dissipation rating at that temperature.

Is the body diode suitable for synchronous rectification?

Yes-the body diode has a forward voltage of -0.65V to -1.0V at -1A and reverse recovery time of 27ns at -10A/−100A/μs, making it viable for synchronous rectification in buck converters up to ~1MHz. Its Q_RR of 21nC is low enough to minimize recovery loss when paired with appropriate gate timing control.

Does this MOSFET require a negative gate drive voltage?

No-it is a P-channel device requiring a gate voltage *lower* than the source to turn on, but not necessarily negative relative to ground. When used as a high-side switch with source at +12V, a 0V gate drive fully enhances the channel; a +5V gate drive would turn it off. Gate-source voltage must stay within ±20V, and −10V relative to source is recommended for lowest R_DS(ON).

How is the 175°C rating validated?

The +175°C maximum junction temperature is validated per AEC-Q101 stress test requirements, including high-temperature operating life (HTOL) at 175°C for 1000 hours and temperature cycling from −55°C to +175°C for 1000 cycles. The device's thermal resistance (R_θJC = 1.0°C/W) and SOA curve confirm safe operation at this limit under defined pulse and steady-state conditions.