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Diodes Incorporated DMPH3010LK3Q-13

Part No.:
DMPH3010LK3Q-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixDMPH3010LK3Q-13.pdf
Description:
MOSFET P-CHANNEL 30V 50A TO252
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,866

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Product details

Overview

DMPH3010LK3-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET rated for -30V VDS, 7.5mΩ RDS(ON) at VGS = -10V, and -50A continuous drain current at TC = +25°C, housed in a TO252 (DPAK) package. It is AEC-Q101 qualified and rated for operation up to +175°C junction temperature, making it suitable for automotive power management and high-temperature DC-DC converter primary-side switching.

For engineers reviewing the DMPH3010LK3-13 datasheet, DMPH3010LK3-13 pinout, DMPH3010LK3-13 application, or DMPH3010LK3-13 equivalent, key selection criteria include its low RDS(ON) at -4.5V gate drive, 100% production-tested UIS capability, and thermal resistance of 1.0°C/W (junction-to-case), critical for thermally constrained automotive and industrial power stages.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low on-resistance while maintaining fast switching performance-evidenced by 9.0ns turn-on delay, 255ns turn-off delay, and 21.7nC Qgd at VGS = -10V. Its body diode exhibits 27ns reverse recovery time and 21nC QRR under -10A/−100A/μs conditions.

The device is characterized for stable operation across −55°C to +175°C, with RDS(ON) normalized to ≤1.5× nominal at 175°C (VGS = -4.5V). Its 1.0°C/W RθJC enables direct heatsinking via the exposed drain pad, supporting high-power density designs without external thermal vias.

Key Specifications

Parameter Value and Actual Design Meaning
VDS -30V - Maximum blocking voltage for 12V/24V automotive rail switching
RDS(ON) 7.5mΩ @ VGS = -10V - Enables <1.5W conduction loss at 50A in TO252 footprint
ID (continuous) -50A @ TC = +25°C - Supports high-current synchronous rectification or load switching
Qg 139nC @ VGS = -10V - Determines gate driver current requirement for <100ns switching transitions
EAS 113mJ - Withstands single-pulse inductive energy in motor control or solenoid drive
TJ max +175°C - Allows operation in engine bay or under-hood environments without derating
RθJC 1.0°C/W - Enables direct thermal coupling to PCB copper or heatsink for >3W dissipation

Pinout & Package

Package: TO252 (DPAK), surface-mount, with exposed drain pad for thermal and electrical connection. Molded green compound, matte tin-plated leadframe, RoHS and halogen-free compliant.

Pin/Terminal Circuit Role Design Meaning
Drain (Tab) Main current path output / thermal interface Exposed metal pad electrically connected to drain; must be soldered to large copper area for thermal management
Source Reference node for gate drive and current return Common return path for load current; referenced to gate drive supply ground
Gate Control terminal for channel modulation High-impedance input requiring <139nC charge for full enhancement; sensitive to ESD

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive-grade reliability including HTOL, TC, UHAST, and mechanical shock per stress test plan
100% UIS tested Each unit passes unclamped inductive switching at IAS = -47A, ensuring robustness in flyback and buck-boost topologies
Low RDS(ON) at -4.5V 10mΩ enables logic-level gate drive compatibility with 3.3V/5V microcontrollers in space-constrained modules
Green compound & finish UL 94V-0 rated molding compound and halogen/antimony-free construction meet automotive environmental compliance
Fast body diode 27ns tRR and 21nC QRR reduce switching losses in synchronous rectifier and bidirectional power flow applications

Applications

Automotive Body Control Module (BCM) Industrial DC-DC Buck Converter

Use Scenario: High-side load switch for 12V lighting and actuator circuits in vehicle door modules.

IC Role / Device Role / Timing Role: P-channel MOSFET used as high-side switch with integrated gate pull-up resistor network.

Use Value: 175°C rating eliminates need for thermal derating in sealed enclosures; 7.5mΩ RDS(ON) limits voltage drop to <375mV at 50A peak load.

Use Scenario: Primary-side synchronous rectifier in isolated 48V-to-12V telecom DC-DC converters.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck stage operating at 300kHz with 50A output.

Use Value: 139nC Qg and 255ns tD(OFF) enable efficient hard-switching; 1.0°C/W RθJC supports >3W dissipation on 2oz copper.

LED Backlight Driver Power over Ethernet (PoE) PSE Controller

Use Scenario: Dimming FET in constant-current LED string drivers for automotive instrument clusters.

IC Role / Device Role / Timing Role: PWM-controlled current sink with fast turn-off to minimize tail current during dimming transitions.

Use Value: 27ns tRR and 21nC QRR suppress ringing and reduce EMI during high-frequency PWM dimming.

Use Scenario: Power switch in IEEE 802.3bt Type 4 PSE (Power Sourcing Equipment) for 90W delivery.

IC Role / Device Role / Timing Role: Hot-swap MOSFET controlling inrush current and fault isolation on powered ports.

Use Value: 113mJ EAS withstands cable discharge events; AEC-Q101 qualification ensures long-term reliability in infrastructure equipment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMTH3010LPSQ-13 Same die, but in SO-8 package; RθJA = 62°C/W (vs. 38°C/W for TO252); no exposed drain pad Limited to <2.5W ambient operation; unsuitable for high-current automotive under-hood use Select only when board space is constrained and thermal budget allows ≥50°C/W total resistance
IPB80P03P4L-04 Infineon OptiMOS P4; -30V, 4.0mΩ @ -10V, but 150°C TJ max and non-AEC-Q101 Higher efficiency at high current, but not qualified for automotive mission-critical systems Prefer for industrial power supplies where AEC-Q101 is not required and lower RDS(ON) is prioritized

Compared with DMTH3010LPSQ-13 and IPB80P03P4L-04, DMPH3010LK3-13 uniquely combines AEC-Q101 qualification, +175°C operation, and TO252 thermal performance-making it the only option for thermally demanding automotive high-side switching where reliability and junction temperature margin are non-negotiable.

Availability

DMPH3010LK3-13 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC converters, and LED backlighting systems requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for DMPH3010LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

DMPH3010LK3-13 belongs to Diodes' AEC-Q101-qualified high-temperature MOSFET product line, engineered specifically for automotive power distribution and thermal-challenged industrial switching applications where conventional MOSFETs fail.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMPH3010LK3-13 supports -40A continuous drain current at TC = +100°C, as specified in the Absolute Maximum Ratings table. This reflects a 20% reduction from its -50A rating at 25°C, consistent with its thermal derating curve and 1.0°C/W RθJC.

Is the TO252 package lead-free and RoHS compliant?

Yes-the DMPH3010LK3-13 uses a matte tin finish over copper leadframe and green molding compound, meeting EU RoHS Directive 2011/65/EU and Diodes Incorporated's halogen- and antimony-free "Green" standard (<900ppm Br, <900ppm Cl, <1000ppm Sb).

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is recommended to control dV/dt and prevent oscillation-especially given its 139nC total gate charge and 6.2Ω intrinsic gate resistance. Typical values range from 10Ω to 47Ω depending on switching frequency and driver capability, per layout-dependent ringing analysis.

Can DMPH3010LK3-13 be used in linear mode (Ohmic region) operation?

No-it is not characterized or rated for linear (saturation) mode operation. The Safe Operating Area (SOA) chart shows only single-pulse capability down to 10μs, and its RDS(ON) is specified only in enhancement mode; sustained linear operation risks thermal runaway due to positive temperature coefficient behavior.

DMPH3010LK3Q-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
139 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6807 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
3.9W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252 (DPAK)

DMPH3010LK3Q-13 FAQ

1.How can I place an order for DMPH3010LK3Q-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMPH3010LK3Q-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMPH3010LK3Q-13 reliable?

The price and inventory of DMPH3010LK3Q-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMPH3010LK3Q-13 is usually 5 days.

3.What payment methods are accepted for DMPH3010LK3Q-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMPH3010LK3Q-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMPH3010LK3Q-13?

DMPH3010LK3Q-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMPH3010LK3Q-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMPH3010LK3Q-13?

For technical support, including DMPH3010LK3Q-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMPH3010LK3Q-13 requirements.

6.How does Aetrix verify that DMPH3010LK3Q-13 is sourced from the original manufacturer or authorized distributors?

All DMPH3010LK3Q-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMPH3010LK3Q-13 meets industry standards.

7.What is the process for return or replacement of DMPH3010LK3Q-13?

All DMPH3010LK3Q-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMPH3010LK3Q-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMPH3010LK3Q-13 part is unused and in its original packaging.

Return procedure for DMPH3010LK3Q-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMPH3010LK3Q-13 Tags

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