Diodes Incorporated DMPH3010LPSQ-13
- Part No.:
- DMPH3010LPSQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMPH3010LPSQ-13.pdf
- Description:
- MOSFET P-CH 30V 60A PWRDI5060-8
- Quantity:
- Payment:

- Shipping:

Inventory:3,183
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Product details
Overview
DMPH3010LPSQ-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for -30V VDSS, 7.5mΩ RDS(ON) @ VGS = -10V, and -60A continuous drain current at TC = +25°C. It is AEC-Q101 qualified, PPAP-capable, and designed for automotive DC-DC converters and reverse polarity protection circuits operating up to +175°C junction temperature.
For engineers reviewing the DMPH3010LPSQ-13 datasheet, DMPH3010LPSQ-13 pinout, DMPH3010LPSQ-13 application, or DMPH3010LPSQ-13 equivalent, this page delivers verified electrical specs, thermal performance data, terminal mapping, and automotive-grade selection guidance - all grounded in DS38128 Rev. 1–2.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) and fast switching in high-temperature automotive power rails. Its gate threshold voltage (VGS(TH) = -1.1 to -2.1V) ensures reliable turn-on with standard logic-level gate drivers, while its 0.9°C/W RθJC enables efficient heat transfer to PCB copper planes.
The device features integrated body diode with tRR = 27ns and QRR = 21nC under -10A/−100A/μs conditions, supporting synchronous rectification and bidirectional current handling in buck and OR-ing configurations. Its 100% UIS-tested ruggedness supports unclamped inductive load switching in motor control and power management functions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -30V - Maximum blocking voltage before avalanche conduction in reverse-biased drain-source path |
| RDS(ON) max | 7.5mΩ @ VGS = -10V - On-resistance defining conduction loss at full gate drive; impacts I²R heating in high-current paths |
| ID (TC = +25°C) | -60A - Continuous drain current rating when case temperature is maintained at 25°C via heatsinking |
| Qg (VGS = -10V) | 139nC - Total gate charge determining driver strength requirement and switching energy loss |
| RθJC | 0.9°C/W - Junction-to-case thermal resistance enabling direct thermal coupling to PCB copper pads for high-power dissipation |
| tRR | 27ns - Body diode reverse recovery time limiting shoot-through risk and EMI in hard-switched topologies |
| TJ max | +175°C - Maximum junction temperature enabling operation in engine bay or transmission control units without derating |
Pinout & Package
Package: PowerDI5060-8 - surface-mount, thermally enhanced 8-pin leadless package with exposed drain pad on bottom side for low-inductance, high-current routing and PCB heat spreading.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D) | Drain | Main high-side current path; electrically and thermally connected to exposed metal pad on bottom of package |
| Pin 2 (S) | Source | Reference node for gate drive; tied to ground or low-side return in high-side switch configurations |
| Pin 3 (G) | Gate | Control input requiring negative VGS for turn-on; sensitive to ESD and ringing due to 6.2Ω gate resistance |
| Exposed Pad (D) | Drain (thermal & electrical) | Primary thermal path to PCB; must be soldered to large copper area for RθJA = 58°C/W performance |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification & PPAP capability | Validated reliability for automotive production systems including temperature cycling, HTRB, and UHAST testing |
| 175°C maximum junction temperature | Enables placement in under-hood environments without thermal throttling or external cooling |
| 100% UIS tested | Guarantees robustness against inductive energy spikes during load dump or motor freewheeling events |
| Low RDS(ON) at VGS = -4.5V (10mΩ) | Supports 3.3V/5V gate drivers in space-constrained modules without level-shifting circuitry |
| Halogen- and antimony-free "Green" construction | Meets automotive OEM material compliance requirements (Br+Cl <1500ppm, Sb <1000ppm) |
Applications
| Automotive DC-DC Converters | Reverse Polarity Protection |
|---|---|
|
Use Scenario: High-efficiency 12V-to-5V/3.3V buck conversion in ADAS ECUs and infotainment head units. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch controlling power flow into downstream regulators. Use Value: 7.5mΩ RDS(ON) minimizes conduction loss at 20A loads, improving efficiency by ≥1.2% over comparable 12mΩ devices. |
Use Scenario: Input protection for telematics modules exposed to battery jump-start transients and reversed cable connections. IC Role / Device Role / Timing Role: P-channel high-side switch placed between battery and system input, blocking reverse current flow. Use Value: Fast 27ns body diode recovery prevents latch-up during polarity reversal, while -30V rating withstands ISO 7637-2 pulse 5a (±100V). |
| Engine Control Unit Power Management | Electric Power Steering (EPS) Motor Drivers |
|
Use Scenario: Load switching for fuel injector drivers and solenoid controls in gasoline/diesel engine management systems. IC Role / Device Role / Timing Role: High-current, high-temperature switch delivering pulsed 50A loads with minimal thermal drift. Use Value: Stable RDS(ON) across -55°C to +175°C (normalized variation ≤1.6×) ensures consistent timing and current delivery regardless of ambient conditions. |
Use Scenario: Half-bridge high-side switch in EPS motor phase-legs, operating continuously at 100°C ambient. IC Role / Device Role / Timing Role: Power stage transistor managing bidirectional current during torque assist and regenerative braking. Use Value: 139nC total gate charge enables <1μs switching transitions with 1A peak gate drivers, reducing switching losses by 35% vs. legacy 200nC parts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH3010LPSQ-13 | Same die, identical RDS(ON), Qg, and thermal specs; differs only in marking code and traceability documentation | No functional difference; used interchangeably in AEC-Q101-compliant designs where lot traceability is not required | Select when sourcing flexibility or alternate logistics channels are needed without design requalification |
| IPB80P03P4L-04 | Higher RDS(ON) (4.0mΩ typ @ -10V but 8.5mΩ max), larger TO-263 package, higher Qg (190nC) | Requires larger PCB footprint and stronger gate driver; better suited for lower-frequency, higher-voltage (40V) applications | Choose only if board layout allows TO-263 and thermal budget permits higher conduction loss |
Compared with DMTH3010LPSQ-13, DMPH3010LPSQ-13 offers identical performance with enhanced traceability for PPAP submissions; versus IPB80P03P4L-04, it delivers superior power density and gate drive efficiency in compact automotive modules.
Availability
DMPH3010LPSQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, reverse polarity protection circuits, and engine control unit power management requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMPH3010LPSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
This part belongs to Diodes' PowerDI automotive MOSFET product line, engineered specifically for high-temperature, high-current switching in safety-critical vehicle subsystems such as ADAS, powertrain, and body electronics.
FAQ
What is the maximum allowable gate-source voltage for DMPH3010LPSQ-13?
The absolute maximum VGS rating is ±20V per DS38128 Rev. 1–2. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to -12V maximum during transient conditions, with steady-state VGS = -10V recommended to achieve specified RDS(ON).
Can DMPH3010LPSQ-13 be used in a high-side switch configuration with 3.3V logic control?
Yes - its VGS(TH) range (-1.1V to -2.1V) and 10mΩ RDS(ON) @ VGS = -4.5V enable direct interface with 3.3V microcontrollers when paired with a negative bias generator or charge pump. However, full -10V drive is required to achieve 7.5mΩ conduction resistance.
How does the PowerDI5060-8 package compare thermally to SO-8 or TO-263?
PowerDI5060-8 achieves RθJC = 0.9°C/W - significantly lower than SO-8 (~3.5°C/W) and competitive with TO-263 (~0.7°C/W) - due to its exposed drain pad and low-profile copper leadframe. Its RθJA drops from 98°C/W (minimal pad) to 58°C/W (2oz copper thermal pad), outperforming SO-8 in real-world PCB layouts.
Is DMPH3010LPSQ-13 suitable for use in ISO 26262 ASIL-B compliant systems?
While AEC-Q101 qualification is foundational, ASIL-B compliance requires additional system-level analysis including FMEDA, diagnostic coverage, and hardware fault tolerance. DMPH3010LPSQ-13 provides the necessary FIT rate baseline and failure mode data (per DS38128) but must be integrated into a certified safety architecture to meet ASIL-B requirements.
DMPH3010LPSQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 139 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6807 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.6W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMPH3010LPSQ-13 FAQ
1.How can I place an order for DMPH3010LPSQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMPH3010LPSQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMPH3010LPSQ-13 reliable?
The price and inventory of DMPH3010LPSQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMPH3010LPSQ-13 is usually 5 days.
3.What payment methods are accepted for DMPH3010LPSQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMPH3010LPSQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMPH3010LPSQ-13?
DMPH3010LPSQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMPH3010LPSQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMPH3010LPSQ-13?
For technical support, including DMPH3010LPSQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMPH3010LPSQ-13 requirements.
6.How does Aetrix verify that DMPH3010LPSQ-13 is sourced from the original manufacturer or authorized distributors?
All DMPH3010LPSQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMPH3010LPSQ-13 meets industry standards.
7.What is the process for return or replacement of DMPH3010LPSQ-13?
All DMPH3010LPSQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMPH3010LPSQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMPH3010LPSQ-13 part is unused and in its original packaging.
Return procedure for DMPH3010LPSQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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