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Diodes Incorporated DMPH33M8SPSW-13

Part No.:
DMPH33M8SPSW-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixDMPH33M8SPSW-13.pdf
Description:
MOSFET BVDSS: 25V~30V PowerDI506
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,811

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Product details

Overview

DMPH33M8SPSW-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for -30V VDSS, 3.8mΩ RDS(ON) @ VGS = -10V, and -100A continuous drain current at TC = +25°C. It serves as a high-current, low-loss power switch in DC-DC converter synchronous rectification and battery protection circuits.

For engineers reviewing the DMPH33M8SPSW-13 datasheet, DMPH33M8SPSW-13 pinout, DMPH33M8SPSW-13 application, or DMPH33M8SPSW-13 equivalent, key selection criteria include its 1.1°C/W RθJC, -175°C to +175°C operating range, 241mJ EAS, and thermally optimized exposed-drain PowerDI5060-8 (SWP) package for high-power density designs.

Technical Context

This MOSFET employs trench-gate silicon process technology to achieve ultra-low on-resistance while maintaining robust switching performance. Its gate threshold voltage of -1V to -3V ensures reliable turn-on with standard logic-level gate drivers in high-side configurations.

The device integrates a fast-recovery body diode with tRR = 26.5ns and QRR = 37.3nC, enabling efficient operation in hard-switched topologies. Thermal design is supported by a 1.1°C/W junction-to-case resistance and validated 100% UIS testing up to -69A avalanche current.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS -30V - Withstands up to 30V reverse drain-source voltage without breakdown in blocking state.
RDS(ON) 3.8mΩ @ VGS = -10V - Enables <1.5W conduction loss at 60A, critical for high-efficiency power stages.
ID (continuous) -100A @ TC = +25°C - Supports high-current load switching when mounted on adequate copper area.
RθJC 1.1°C/W - Allows direct thermal path from junction to PCB copper, enabling compact heatsinking.
EAS 241mJ - Rated avalanche energy supports robustness against inductive switching transients.
tRR 26.5ns - Fast body diode recovery reduces switching losses and cross-conduction risk in synchronous buck converters.
Qg 127nC - Gate charge level determines driver strength requirement and influences switching speed vs. EMI trade-off.

Pinout & Package

Package: PowerDI5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 5.15 × 6.40 mm, height ≤ 1.10 mm. UL 94V-0 molded compound, matte tin annealed terminals.

Pin/Terminal Circuit Role Design Meaning
S (Source) Reference node for gate drive and current return path Connected to system ground or negative rail; defines VGS reference point for control.
G (Gate) Control terminal for channel modulation Receives negative voltage relative to source to turn on; requires ≥ -10V for full RDS(ON) spec.
D (Drain) Main current-carrying terminal (exposed pad) Electrically and thermally connected to large copper area; carries full load current and dissipates heat.

Key Features

Feature Design Value
Thermally optimized package PowerDI5060-8 with exposed drain pad delivers 1.1°C/W RθJC, reducing junction temperature rise under high-current operation.
High-temperature operation Rated for continuous operation from -55°C to +175°C, supporting under-hood automotive and industrial environments.
Robust avalanche capability 100% production-tested UIS up to -69A/241mJ ensures reliability in inductive load switching without external snubbers.
Low-profile form factor 1.1mm max height enables use in space-constrained applications such as slim power adapters and portable battery packs.
Green compliance Halogen- and antimony-free, RoHS 3 compliant (≤900ppm Br/Cl, ≤1000ppm Sb), meeting stringent environmental requirements.

Applications

DC-DC Synchronous Rectifier Battery Protection Circuit

Use Scenario: High-efficiency 12V-to-5V buck converter in server VRMs and telecom power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss.

Use Value: 3.8mΩ RDS(ON) cuts rectifier loss by >65% vs. 40V Schottky, improving full-load efficiency by ~1.2%.

Use Scenario: Reverse-polarity and overcurrent protection in 24V Li-ion battery packs for power tools.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery discharge path.

Use Value: -30V rating and -100A current capacity enable single-device protection for 20A continuous, 100A peak loads.

Motor Drive H-Bridge Hot-Swap Controller

Use Scenario: Half-bridge leg in 24V BLDC motor driver for industrial automation systems.

IC Role / Device Role / Timing Role: High-side switch in complementary pair with N-channel MOSFET.

Use Value: -2.3V typical VGS(TH) allows clean turn-on using bootstrap-assisted gate drive, minimizing shoot-through risk.

Use Scenario: Inrush current limiting and fault isolation in 48V data center power distribution units.

IC Role / Device Role / Timing Role: Main pass element in hot-swap OR-ing and current-limiting circuit.

Use Value: 241mJ EAS and 100% UIS qualification ensure survival during live-insertion transients and short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-current power switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMTH3010LPSQ-13 -30V VDSS, 4.2mΩ RDS(ON) @ -10V, same PowerDI5060-8 package, but rated only to +150°C. Lacks AEC-Q101 qualification and 175°C rating; unsuitable for extended-temperature automotive modules. Select when cost sensitivity outweighs extended temperature margin and avalanche robustness.
IPB80P03P4L-04 -30V VDSS, 3.4mΩ RDS(ON) @ -10V, TO-263-7 package, higher RθJA (47°C/W). Larger footprint and lower thermal efficiency require larger PCB area and heatsink for equivalent power handling. Choose only if legacy TO-263 layout compatibility is mandatory and board space is not constrained.

Compared with DMTH3010LPSQ-13 and IPB80P03P4L-04, DMPH33M8SPSW-13 uniquely combines 175°C operation, 241mJ avalanche energy, and 1.1°C/W RθJC in a 5.15×6.40mm footprint-enabling higher power density and reliability in thermally aggressive environments.

Availability

DMPH33M8SPSW-13 is available at Aetrix Electronics and suitable for high-current DC-DC converters, battery management systems, motor drives, and hot-swap controllers requiring stable component supply across automotive, industrial, and computing end markets.

Supply support for DMPH33M8SPSW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions.

This device belongs to Diodes' Power MOSFET product line, engineered for high-efficiency, high-reliability power switching in thermally demanding applications including automotive subsystems and industrial power supplies.

FAQ

What is the maximum allowable gate-source voltage for DMPH33M8SPSW-13?

The absolute maximum VGS rating is ±20V per the datasheet's Maximum Ratings table. Operation beyond ±20V risks permanent gate oxide damage. For reliable turn-on, -10V is recommended to achieve specified 3.8mΩ RDS(ON); -6V yields 10mΩ and is acceptable for reduced-current applications.

Can DMPH33M8SPSW-13 be used in parallel configurations?

Yes-its negative temperature coefficient of RDS(ON) (normalized resistance increases with temperature, per Figure 6) promotes inherent current sharing. However, matched gate drive layout, symmetrical PCB copper, and individual gate resistors are required to minimize dynamic imbalance during switching transitions.

Is DMPH33M8SPSW-13 qualified for automotive applications?

The part itself is not AEC-Q101 qualified per the datasheet note stating "for automotive applications requiring specific change control… please contact us." It is rated for -55°C to +175°C operation and 100% UIS tested, but formal PPAP documentation and IATF 16949 manufacturing evidence are not provided in DS43451 Rev. 3-2.

What is the recommended PCB pad layout for thermal performance?

Diodes specifies a minimum 1-inch square copper plate (2oz) for the exposed drain pad to achieve the 44°C/W RθJA rating. The datasheet references http://www.diodes.com/package-outlines.html for exact pad dimensions; typical layout uses 4.70–5.10mm D1 and 5.60–6.00mm E1 outlines with thermal vias under the pad to inner ground planes.

DMPH33M8SPSW-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Bulk
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
127 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3775 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.7W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8 (Type Q)

DMPH33M8SPSW-13 FAQ

1.How can I place an order for DMPH33M8SPSW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMPH33M8SPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMPH33M8SPSW-13 reliable?

The price and inventory of DMPH33M8SPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMPH33M8SPSW-13 is usually 5 days.

3.What payment methods are accepted for DMPH33M8SPSW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMPH33M8SPSW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMPH33M8SPSW-13?

DMPH33M8SPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMPH33M8SPSW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMPH33M8SPSW-13?

For technical support, including DMPH33M8SPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMPH33M8SPSW-13 requirements.

6.How does Aetrix verify that DMPH33M8SPSW-13 is sourced from the original manufacturer or authorized distributors?

All DMPH33M8SPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMPH33M8SPSW-13 meets industry standards.

7.What is the process for return or replacement of DMPH33M8SPSW-13?

All DMPH33M8SPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMPH33M8SPSW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMPH33M8SPSW-13 part is unused and in its original packaging.

Return procedure for DMPH33M8SPSW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMPH33M8SPSW-13 Tags

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