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Diodes Incorporated DMPH33M8SPSWQ-13
- Part No.:
- DMPH33M8SPSWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMPH33M8SPSWQ-13.pdf
- Description:
- MOSFET BVDSS: 25V~30V PowerDI506
- Quantity:
- Payment:
- Shipping:
Inventory:6,952
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Product details
Overview
DMPH33M8SPSWQ from Diodes Incorporated is a P-channel enhancement-mode MOSFET rated for -30V VDSS, 3.8mΩ RDS(on) at VGS = -10V, and -100A continuous drain current at TC = +25°C in PowerDI5060-8 package; qualified to AEC-Q101 and designed for high-current automotive power switching applications including battery disconnect and load dump protection.
For engineers reviewing the DMPH33M8SPSWQ datasheet, DMPH33M8SPSWQ pinout, DMPH33M8SPSWQ application, or DMPH33M8SPSWQ equivalent, this page delivers verified electrical parameters, thermal performance data, terminal mapping, automotive qualification evidence, and direct alternative comparisons - all grounded in Diodes' DS42514 Rev. 7-2 specification.
Technical Context
This MOSFET operates as a high-side switch in 12V/24V automotive systems, leveraging its low RDS(on) and 175°C maximum junction temperature to sustain operation under engine bay thermal stress. Its gate threshold voltage (VGS(th) = -1 to -3V) enables robust turn-on with standard logic-level drivers, while unclamped inductive switching (UIS) rating of -69A supports solenoid and motor control transients.
The PowerDI5060-8 (SWP Type Q) package integrates an exposed drain pad for direct thermal coupling to PCB copper, achieving RθJC = 1.1°C/W and enabling high-power dissipation without external heatsinks. Dynamic parameters-including Qg = 81nC at VGS = -10V and tF = 160ns-support efficient PWM operation in DC-DC converters and electronic fusing circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -30V - Withstands reverse battery connection and load dump spikes up to ISO 7637-2 Pulse 5a in automotive 12V systems. |
| RDS(on) | 3.8mΩ @ VGS = -10V - Enables <1.5W conduction loss at 60A, critical for thermally constrained under-hood modules. |
| ID | -100A @ TC = +25°C - Supports high-current battery management functions such as main contactor replacement in EV auxiliary systems. |
| TJ(max) | +175°C - Certified for continuous operation in ambient temperatures up to +125°C with derating, meeting AEC-Q101 Grade 0 requirements. |
| Qg | 81nC @ VGS = -10V - Determines gate driver power requirement; enables use with low-cost integrated drivers like TI UCC27531. |
| EAS | 241mJ - Specifies single-pulse avalanche energy handling capability, validating reliability during inductive load switching events. |
| RθJC | 1.1°C/W - Confirms efficient heat transfer from junction to case via exposed drain pad, allowing >3W steady-state dissipation on 1-in² 2oz copper. |
Pinout & Package
Package: PowerDI5060-8 (SWP Type Q), surface-mount, thermally enhanced with exposed drain pad (pins 1–4 and 7–8 are source; pin 5 is gate; pin 6 is drain).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1,2,3,4,7,8 | Source (S) | Common source connection tied to internal die substrate; requires full PCB copper pour for thermal and current capacity. |
| 5 | Gate (G) | Control input with ±20V absolute max rating; 21Ω gate resistance limits ringing and simplifies driver design. |
| 6 | Drain (D) | Exposed metal pad serving as primary current path and thermal interface; must be soldered to large copper area for RθJC = 1.1°C/W. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified & PPAP capable | Validated for automotive production use with full change control, IATF 16949 manufacturing, and traceable lot documentation. |
| 100% UIS tested in production | Each unit undergoes unclamped inductive switching stress test to -69A, ensuring field reliability in motor and solenoid drive applications. |
| Thermally optimized PowerDI5060-8 | Exposes drain pad directly to PCB for 1.1°C/W junction-to-case thermal resistance-reducing board-level thermal design complexity. |
| Low RDS(on) at -6V drive | 10.0mΩ @ VGS = -6V enables compatibility with 5V microcontroller GPIOs or automotive body controller outputs without level shifting. |
| Halogen- and antimony-free "Green" construction | Meets EU RoHS 3 (2015/863/EU) with <900ppm Br, <900ppm Cl, and <1000ppm Sb-ensuring compliance for global vehicle OEM supply chains. |
Applications
| Automotive Battery Disconnect | Engine Control Unit (ECU) Power Switching |
|---|---|
|
Use Scenario: High-side isolation of 12V battery rail during key-off to prevent parasitic drain in modern vehicles with always-on ECUs. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch controlled by microcontroller GPIO with active-low logic. Use Value: 3.8mΩ RDS(on) limits voltage drop to <0.23V at 60A, preserving system voltage stability during cranking and reducing thermal stress on PCB traces. |
Use Scenario: Controlled power-up/down sequencing of ECU sub-circuits (e.g., CAN transceivers, sensor interfaces) during ignition cycles. IC Role / Device Role / Timing Role: Load switch managing 12V-to-5V/3.3V regulator input, activated only when MCU asserts gate control signal. Use Value: -175°C operating range ensures functionality during cold cranking (-40°C) and under-hood thermal soak (+125°C ambient), eliminating need for derating. |
| Electric Power Steering (EPS) Motor Driver | 12V/24V DC-DC Converter Primary Switch |
|
Use Scenario: Half-bridge high-side switch in EPS motor phase-legs, handling bidirectional regenerative braking currents up to 90A. IC Role / Device Role / Timing Role: Power switching element in H-bridge topology, driven by isolated gate driver with 81nC total gate charge requirement. Use Value: 241mJ avalanche energy rating absorbs inductive kickback during fast PWM commutation, preventing device failure without snubber networks. |
Use Scenario: Synchronous rectifier or primary-side switch in buck/boost converters powering ADAS cameras, radar modules, or infotainment systems. IC Role / Device Role / Timing Role: High-efficiency power switch operating at 100–500kHz, leveraging low Coss (932pF) and fast tF (160ns) for minimal switching loss. Use Value: 1.1°C/W RθJC allows >3W continuous dissipation on standard 2oz FR-4, enabling compact converter designs without discrete heatsinks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP30P045P | Higher RDS(on) (4.5mΩ @ -10V), TO-220 package, no AEC-Q101 qualification | Lacks automotive qualification and thermal performance; suitable only for industrial prototypes or non-safety-critical systems | Select only if AEC-Q101 compliance is not required and TO-220 mounting is preferred over surface-mount layout. |
| STL225P4LLF6 | Lower voltage rating (-20V), smaller PowerFLAT 5x6 package, 5.2mΩ RDS(on) @ -4.5V | Restricted to 12V-only systems; insufficient for 24V commercial vehicle applications requiring -30V VDSS | Choose only for space-constrained 12V modules where -30V margin is unnecessary and gate drive is limited to -4.5V. |
Compared with IXTP30P045P and STL225P4LLF6, DMPH33M8SPSWQ uniquely combines AEC-Q101 qualification, -30V rating, 3.8mΩ on-resistance, and PowerDI5060-8 thermal performance-making it the only option validated for production automotive high-current switching across 12V/24V platforms.
Availability
DMPH33M8SPSWQ is available at Aetrix Electronics and suitable for automotive battery management, engine control unit (ECU) power sequencing, and electric power steering (EPS) motor driver applications requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant traceability.
Supply support for DMPH33M8SPSWQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with IATF 16949-certified facilities.
This part belongs to Diodes' Power MOSFET product line, engineered specifically for high-current, high-temperature automotive power switching-emphasizing AEC-Q101 qualification, robust avalanche capability, and thermally optimized packaging.
FAQ
What is the maximum gate-source voltage rating for DMPH33M8SPSWQ?
The absolute maximum gate-source voltage (VGS) is ±20V per the DS42514 datasheet. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to -10V to -12V for full enhancement and avoid overstress during transients.
Does DMPH33M8SPSWQ require a gate resistor for automotive applications?
Yes-a series gate resistor (typically 5–22Ω) is recommended to dampen oscillation caused by gate-drain capacitance (Crss = 500pF) and PCB inductance. This prevents shoot-through in half-bridge configurations and controls dV/dt during switching transitions per ISO 11452-4 EMC requirements.
How is thermal performance affected when mounted on 1oz versus 2oz copper PCB?
On 1oz copper with minimum pad layout, RθJA is 90.1°C/W (PD = 1.7W). On 2oz copper with 1-inch square plate, RθJA improves to 44°C/W (PD = 3.4W). The exposed drain pad's thermal path dominates performance-so 2oz copper is mandatory for >2W continuous operation.
Is DMPH33M8SPSWQ suitable for reverse polarity protection in 24V truck systems?
Yes-its -30V VDSS provides 6V margin above nominal 24V systems, and its -100A rating handles peak cranking currents. Combined with AEC-Q101 qualification and 175°C TJ(max), it meets SAE J1211 requirements for commercial vehicle battery protection circuits.
DMPH33M8SPSWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 81 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3775 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.7W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8 (Type Q)
DMPH33M8SPSWQ-13 FAQ
1.How can I place an order for DMPH33M8SPSWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMPH33M8SPSWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMPH33M8SPSWQ-13 reliable?
The price and inventory of DMPH33M8SPSWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMPH33M8SPSWQ-13 is usually 5 days.
3.What payment methods are accepted for DMPH33M8SPSWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMPH33M8SPSWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMPH33M8SPSWQ-13?
DMPH33M8SPSWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMPH33M8SPSWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMPH33M8SPSWQ-13?
For technical support, including DMPH33M8SPSWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMPH33M8SPSWQ-13 requirements.
6.How does Aetrix verify that DMPH33M8SPSWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMPH33M8SPSWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMPH33M8SPSWQ-13 meets industry standards.
7.What is the process for return or replacement of DMPH33M8SPSWQ-13?
All DMPH33M8SPSWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMPH33M8SPSWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMPH33M8SPSWQ-13 part is unused and in its original packaging.
Return procedure for DMPH33M8SPSWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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