Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMPH4009SPSWQ-13

Part No.:
DMPH4009SPSWQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixDMPH4009SPSWQ-13.pdf
Description:
MOSFET BVDSS: 31V~40V POWERDI506
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,177

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMPH4009SPSWQ-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET rated for -40V VDSS, 11 mΩ RDS(ON) @ VGS = -10V, and -83.4A continuous drain current at TC = +25°C. It features AEC-Q101 qualification, +175°C maximum junction temperature, and PowerDI5060-8/SWP (Type UX) wettable-flank package - designed for high-reliability automotive DC-DC converters and power-management functions.

For engineers reviewing the DMPH4009SPSWQ-13 datasheet, DMPH4009SPSWQ-13 pinout, DMPH4009SPSWQ-13 application, or DMPH4009SPSWQ-13 equivalent, key selection criteria include its low RDS(ON) at -4.5V gate drive, 100% production UIS testing, thermal robustness up to +175°C, and wettable flank geometry enabling automated optical inspection in automotive PCB assembly.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-side switching configurations. Its -2.5V typical VGS(TH) enables reliable turn-on with standard automotive logic-level gate drivers, while the integrated body diode supports synchronous rectification and reverse-current protection.

The device's RθJC of 1.05°C/W and 143W power dissipation capability at TC = +25°C indicate direct thermal coupling to a heatsink via its exposed drain pad. Its Ciss = 5697 pF and Qg = 112 nC @ VGS = -10V reflect trade-offs between switching speed and gate-drive energy requirements in high-frequency DC-DC topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS -40 V - Withstands up to 40V reverse drain-source voltage without breakdown in blocking state.
RDS(ON) @ VGS = -10V 11 mΩ max - Enables <1.1 W conduction loss at 83.4A, critical for high-efficiency power stages.
RDS(ON) @ VGS = -4.5V 19 mΩ max - Supports logic-level gate drive in space-constrained automotive modules.
ID (TC = +25°C) -83.4 A - Continuous drain current rating under ideal heatsink conditions.
TJ Operating Range -55°C to +175°C - Certified for under-hood environments including engine control units and battery management systems.
Qg @ VGS = -10V 112 nC - Determines gate driver sizing and switching loss in 100–500 kHz DC-DC applications.
EAS 394.9 mJ - Energy-handling capability during unclamped inductive switching events, validated per production test.

Pinout & Package

Package: PowerDI5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad and wettable flanks for solder-joint inspection.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (D) Drain Main high-current path; electrically and thermally connected to exposed copper pad on bottom of package.
Pin 2 (S) Source Reference node for gate drive; tied to ground or low-side return in high-side switch configuration.
Pin 3 (G) Gate Control terminal; requires negative voltage relative to source to turn on P-channel device.
Pins 4–8 (D) Drain (redundant) Parallel drain connections to minimize package inductance and improve current sharing across multiple internal die segments.

Key Features

Feature Design Value
AEC-Q101 qualified & PPAP capable Meets automotive reliability standards for mission-critical power switching in safety-relevant systems.
+175°C maximum junction temperature Enables operation in high-ambient zones such as engine compartments without derating.
Wettable flank terminals Facilitates automated optical inspection (AOI) of solder fillets on all eight side pins for zero-defect automotive manufacturing.
100% production UIS tested Each unit verified for ruggedness against inductive load transients without external snubbers.
Halogen- and antimony-free "Green" construction Complies with EU RoHS 3 and automotive environmental directives (<900 ppm Br/Cl, <1000 ppm Sb).

Applications

Automotive DC-DC Converters High-Side Load Switches

Use Scenario: 12V-to-5V/3.3V buck converter in ADAS camera ECU requiring >95% efficiency and AEC-Q101 compliance.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 300 kHz with gate-driven by integrated controller.

Use Value: 11 mΩ RDS(ON) minimizes conduction loss; +175°C rating avoids thermal shutdown during peak-load transient conditions.

Use Scenario: Reverse-polarity and overcurrent protected power distribution to infotainment head unit.

IC Role / Device Role / Timing Role: High-side power switch controlled by microcontroller GPIO with soft-start via RC gate network.

Use Value: Low 19 mΩ RDS(ON) at -4.5V enables direct MCU drive; built-in body diode blocks reverse current without external components.

Engine Control Unit (ECU) Power Management On-Board Charger (OBC) Auxiliary Supplies

Use Scenario: Pre-charge and main power sequencing for fuel injector drivers in gasoline direct injection systems.

IC Role / Device Role / Timing Role: High-side switch managing 40V battery rail with fast turn-off to prevent shoot-through during transition.

Use Value: 146 ns tD(OFF) and 165 ns tF ensure precise timing control; 394.9 mJ EAS withstands inductive kickback from solenoid loads.

Use Scenario: Isolated auxiliary supply (12V/24V) powering OBC control logic and communication interfaces.

IC Role / Device Role / Timing Role: Primary-side high-side switch in flyback or forward converter operating at 100–200 kHz.

Use Value: RθJC = 1.05°C/W allows direct mounting to metal chassis; wettable flanks support IPC-A-610 Class 3 solder joint acceptance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMTH4009LPS-13 Same RDS(ON) (11 mΩ @ -10V) but TO-252 package; higher RθJA (62°C/W vs. 32°C/W) and no wettable flanks. Limited to lower-power or non-AOI production lines; unsuitable for high-density automotive PCBs requiring side-pin inspection. Select when board-level thermal mass suffices and AOI is not required; avoid where space or thermal constraints demand PowerDI5060-8.
IPB80P04P4L-02 Higher VDSS (-40V same), but 13.5 mΩ RDS(ON) @ -10V and larger PG-HSOF-8 package; no AEC-Q101 documentation publicly available. Targeted at industrial motor drives; lacks PPAP documentation and wettable flank geometry for automotive serial production. Consider only for non-automotive designs where AEC-Q101 and AOI are not mandated; verify qualification status directly with Infineon.

Compared with DMTH4009LPS-13 and IPB80P04P4L-02, DMPH4009SPSWQ-13 uniquely combines AEC-Q101 certification, wettable flank geometry, and 1.05°C/W RθJC in a compact 5.1 × 6.4 mm footprint - making it the only option qualified for high-volume, optically inspected automotive power modules requiring both thermal density and process traceability.

Availability

DMPH4009SPSWQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, high-side load switches, and engine control unit power management requiring stable component supply across multi-year vehicle production cycles.

Supply support for DMPH4009SPSWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power, signal integrity, and timing solutions for automotive, industrial, and computing markets.

This device belongs to Diodes' AEC-Q101-qualified PowerMOS portfolio, engineered specifically for automotive power conversion and load switching where thermal resilience, production test rigor, and optical inspectability are mandatory.

FAQ

What is the maximum gate-source voltage rating for DMPH4009SPSWQ-13?

The absolute maximum VGS is ±20 V, as specified in the Maximum Ratings table. Exceeding this may cause irreversible gate oxide damage. For reliable operation, gate drive circuits should be clamped to ≤±15 V, especially in noisy automotive environments where transients can couple into gate traces.

Does DMPH4009SPSWQ-13 require a gate resistor for stability?

Yes - a series gate resistor (typically 2–10 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 408 pF) and PCB inductance. The datasheet's switching time test condition uses Rg = 2 Ω; omitting it risks overshoot, shoot-through, or EMI in high-speed switching applications.

Can DMPH4009SPSWQ-13 be used in parallel configurations?

Yes - its negative temperature coefficient of RDS(ON) (normalized resistance increases with temperature, per Figure 6) promotes current sharing. However, layout symmetry, matched gate drive paths, and individual current-sense resistors are required to ensure balanced loading and avoid thermal runaway in multi-device arrays.

Is the body diode suitable for reverse recovery in synchronous rectification?

The body diode has tRR = 27 ns and QRR = 22 nC at dI/dt = -100 A/µs, making it viable for moderate-frequency synchronous rectification. However, its VSD = -0.67 V (typ) at -1 A indicates higher conduction loss than Schottky alternatives - best suited for freewheeling rather than primary rectification above 200 kHz.

DMPH4009SPSWQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
83.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
11mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
112 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5697 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
4.6W (Ta), 143W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
PowerDI5060-8 (Type UX)

DMPH4009SPSWQ-13 FAQ

1.How can I place an order for DMPH4009SPSWQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMPH4009SPSWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMPH4009SPSWQ-13 reliable?

The price and inventory of DMPH4009SPSWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMPH4009SPSWQ-13 is usually 5 days.

3.What payment methods are accepted for DMPH4009SPSWQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMPH4009SPSWQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMPH4009SPSWQ-13?

DMPH4009SPSWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMPH4009SPSWQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMPH4009SPSWQ-13?

For technical support, including DMPH4009SPSWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMPH4009SPSWQ-13 requirements.

6.How does Aetrix verify that DMPH4009SPSWQ-13 is sourced from the original manufacturer or authorized distributors?

All DMPH4009SPSWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMPH4009SPSWQ-13 meets industry standards.

7.What is the process for return or replacement of DMPH4009SPSWQ-13?

All DMPH4009SPSWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMPH4009SPSWQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMPH4009SPSWQ-13 part is unused and in its original packaging.

Return procedure for DMPH4009SPSWQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMPH4009SPSWQ-13 Tags

  • DMPH4009SPSWQ-13
  • DMPH4009SPSWQ-13 PDF
  • DMPH4009SPSWQ-13 Datasheet
  • DMPH4009SPSWQ-13 Specifications
  • DMPH4009SPSWQ-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMPH4009SPSWQ-13
  • Buy DMPH4009SPSWQ-13
  • DMPH4009SPSWQ-13 Price
  • DMPH4009SPSWQ-13 Distributor
  • DMPH4009SPSWQ-13 Supplier
  • DMPH4009SPSWQ-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER