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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMPH4011SK3Q-13

Name: DMPH4011SK3Q-13
Brand: Diodes Incorporated
SKU: DMPH4011SK3Q-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMPH4011SK3Q-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: DMPH4011SK3Q-13.pdf

Description:: MOSFET BVDSS: 31V~40V TO252 T&R

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Product details

Overview

DMPH4011SK3Q-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET rated for -40V V_DSS, 11 mΩ R_DS(ON) @ V_GS = -10V, and -79 A continuous drain current at T_C = +25°C. It is AEC-Q101 qualified, operates up to +175°C junction temperature, and features 100% production-tested UIS capability - designed for automotive DC-DC converters and power management functions.

For engineers reviewing the DMPH4011SK3Q-13 datasheet, DMPH4011SK3Q-13 pinout, DMPH4011SK3Q-13 application, or DMPH4011SK3Q-13 equivalent, key selection criteria include its low R_DS(ON) at -4.5V gate drive, robust thermal resistance (R_θJC = 1.3°C/W), and TO252 (DPAK) package suitability for high-reliability under-hood power stages.

Technical Context

This MOSFET employs a trench-gate process optimized for low on-resistance and fast switching in high-side configurations. Its -2.5V maximum V_GS(TH) enables reliable turn-on with standard automotive logic-level gate drivers, while the integrated body diode supports synchronous rectification and freewheeling in buck and half-bridge topologies.

The device's 202 mJ E_AS rating and 100% UIS testing ensure ruggedness against inductive load transients common in automotive solenoid and motor control circuits. Thermal design is supported by a low R_θJC and exposed drain pad optimized for PCB copper thermal spreading in TO252 footprint layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-40 V - Withstands reverse-biased drain-source voltage in high-side switch applications without breakdown.
R_DS(ON) @ V_GS = -10V	11 mΩ max - Enables <1.0 W conduction loss at 9.5 A, critical for thermally constrained automotive modules.
R_DS(ON) @ V_GS = -4.5V	19 mΩ max - Ensures functional operation with 5V microcontroller gate drive in cost-sensitive systems.
I_D (T_C = +25°C)	-79 A - Supports high-current power rails in engine control units and ADAS domain controllers.
T_J Operating Range	-55°C to +175°C - Certified for under-hood placement without derating in modern ICE and hybrid powertrain electronics.
E_AS	202 mJ - Sustains repetitive inductive energy spikes in solenoid drivers without failure.
R_θJC	1.3°C/W - Allows direct thermal coupling to heatsink or large copper pour for efficient junction-to-case heat transfer.

Pinout & Package

Package: TO252 (DPAK), surface-mount, with exposed drain pad for thermal and electrical connection. Molded plastic case meets UL 94V-0 flammability rating and J-STD-020 Level 1 moisture sensitivity.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal (exposed pad)	Electrically and thermally connected to PCB copper; requires full-solder coverage for rated current and thermal performance.
Source (S)	Reference node for gate drive and current return path	Connected to system ground or high-side rail reference; defines V_GS measurement point.
Gate (G)	Control input for channel conduction	High-impedance MOS gate requiring <100 nA leakage; sensitive to ESD and requires proper gate resistor sizing for dV/dt control.

Key Features

Feature	Design Value
AEC-Q101 qualification with PPAP support	Validated for automotive production use with documented change control, IATF 16949 manufacturing, and zero-defect screening.
100% production UIS testing	Each unit passes unclamped inductive switching stress test (L = 1 mH, I_AS = -20 A), ensuring field reliability in transient-heavy environments.
Low R_DS(ON) at -4.5V	19 mΩ max enables compatibility with 5V logic-level gate drivers without level-shifting circuitry.
175°C maximum junction temperature	Permits operation in high-ambient zones (e.g., near engines or inverters) without thermal shutdown or parameter drift.
Halogen- and antimony-free "Green" construction	Meets automotive environmental compliance: <900 ppm Br, <900 ppm Cl, <1000 ppm Sb; RoHS 3 compliant.

Applications

Automotive DC-DC Converters

Engine Control Unit Power Management

Use Scenario: High-efficiency 12V-to-5V/3.3V buck conversion in vehicle infotainment and telematics modules.

IC Role / Device Role: High-side synchronous rectifier switch in integrated controller-based converter stage.

Use Value: 11 mΩ R_DS(ON) reduces conduction loss by >35% vs. legacy 20 mΩ parts, improving efficiency and thermal margin at 15 A output.

Use Scenario: Load switching for fuel injector drivers and sensor bias rails in ECU mainboard power distribution.

IC Role / Device Role: High-side power switch enabling controlled hot-swap and short-circuit protection.

Use Value: 202 mJ E_AS withstands inductive kickback from injector coils without external snubbers, simplifying BOM.

LED Backlighting Drivers

ADAS Camera Module Power Sequencing

Use Scenario: PWM-controlled current regulation for LCD backlight strings in instrument clusters and center displays.

IC Role / Device Role: Low-loss current sink switch in constant-current LED driver topology.

Use Value: Fast t_F = 147 ns and low Q_gd = 25 nC minimize switching losses during 1–20 kHz dimming, reducing audible noise and heat.

Use Scenario: Sequenced power enable for multi-rail camera SoCs (e.g., ISP, image sensor, lens actuator) in surround-view systems.

IC Role / Device Role: Controlled high-side rail switch with precise timing via MCU GPIO.

Use Value: -2.5V V_GS(TH) max ensures clean turn-on at 3.3V logic levels, eliminating need for gate boosters in compact camera modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80P04P4L-02	Higher R_DS(ON) (14.5 mΩ @ -10V), larger TO263 package, higher Q_g (120 nC)	Better suited for lower-frequency, higher-current industrial SMPS due to superior thermal mass	Select when board space allows TO263 and gate drive strength exceeds 100 mA peak.
DMTH4007LPSQ-13	Lower voltage rating (-30V), lower R_DS(ON) (6.8 mΩ @ -10V), same TO252 package and AEC-Q101 grade	Optimized for 24V systems with tighter R_DS(ON) budget but limited to lower bus voltages	Prefer for 24V battery architectures where -40V margin is unnecessary and lower conduction loss is prioritized.

Compared with IPB80P04P4L-02 and DMTH4007LPSQ-13, DMPH4011SK3Q-13 uniquely balances -40V rating, 11 mΩ R_DS(ON) at -10V, and TO252 footprint - making it optimal for space-constrained 12V/24V automotive power stages requiring both voltage headroom and thermal efficiency.

Availability

DMPH4011SK3Q-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, engine control unit power management, and LED backlighting drivers requiring stable component supply across extended temperature and long-lifecycle programs.

Supply support for DMPH4011SK3Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

This part belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for under-hood power switching applications demanding extended temperature operation, transient robustness, and PPAP-ready manufacturing.

FAQ

What is the maximum allowable gate-source voltage for DMPH4011SK3Q-13?

The absolute maximum V_GS is ±20 V per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to -12 V maximum in negative-going applications and +12 V maximum in bidirectional control schemes, with series gate resistors sized to limit dV/dt-induced ringing.

Does DMPH4011SK3Q-13 require a gate driver IC in automotive applications?

A gate driver IC is recommended for high-frequency switching (>100 kHz) or high-current loads (>20 A), due to its 104 nC total gate charge at V_GS = -10 V. For lower-frequency, lower-current uses (e.g., load switching at <10 kHz), a 3.3 V or 5 V MCU GPIO with ≤10 Ω series resistance can directly drive it, provided layout minimizes parasitic inductance.

How is thermal performance affected when the exposed drain pad is not fully soldered?

Insufficient solder coverage on the TO252 drain pad increases effective R_θJC beyond the specified 1.3°C/W, potentially raising junction temperature by 20–40°C at full load. Diodes' recommended pad layout specifies a 4.57 mm × 1.06 mm thermal pad with ≥90% solder fill; thermal vias to inner ground planes further reduce R_θJA by up to 35%.

Is DMPH4011SK3Q-13 suitable for reverse polarity protection in 12V automotive systems?

Yes - configured as a high-side switch with gate tied to battery via resistor and source to load, it provides low-loss reverse polarity protection. Its -40 V V_DSS accommodates load dump transients up to ISO 7637-2 Pulse 5a (±60 V), and its -175°C to +175°C range covers cold-cranking and under-hood ambient extremes.

DMPH4011SK3Q-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 79A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 9.8A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 104 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4497 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (DPAK)

DMPH4011SK3Q-13 FAQ

1.How can I place an order for DMPH4011SK3Q-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMPH4011SK3Q-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMPH4011SK3Q-13 reliable?

The price and inventory of DMPH4011SK3Q-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMPH4011SK3Q-13 is usually 5 days.

3.What payment methods are accepted for DMPH4011SK3Q-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMPH4011SK3Q-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMPH4011SK3Q-13?

DMPH4011SK3Q-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMPH4011SK3Q-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMPH4011SK3Q-13?

For technical support, including DMPH4011SK3Q-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMPH4011SK3Q-13 requirements.

6.How does Aetrix verify that DMPH4011SK3Q-13 is sourced from the original manufacturer or authorized distributors?

All DMPH4011SK3Q-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMPH4011SK3Q-13 meets industry standards.

7.What is the process for return or replacement of DMPH4011SK3Q-13?

All DMPH4011SK3Q-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMPH4011SK3Q-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMPH4011SK3Q-13 part is unused and in its original packaging.

Return procedure for DMPH4011SK3Q-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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