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Diodes Incorporated DMPH4013SK3-13
- Part No.:
- DMPH4013SK3-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMPH4013SK3-13.pdf
- Description:
- MOSFET P-CH 40V 55A TO252 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:4,069
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Product details
Overview
DMPH4013SK3-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET rated for -40 V VDSS, 15 mΩ RDS(ON) @ VGS = -10 V, and -55 A continuous drain current at TC = +25°C, designed for reverse polarity protection and motor control in high-temperature automotive and industrial power management systems.
For engineers reviewing the DMPH4013SK3-13 datasheet, DMPH4013SK3-13 pinout, DMPH4013SK3-13 application, or DMPH4013SK3-13 equivalent, key selection criteria include its 175°C junction rating, AEC-Q101 qualification, low RDS(ON) at -4.5 V gate drive, TO252 package thermal performance, and unclamped inductive switching (UIS) capability.
Technical Context
This MOSFET operates as a high-side switch with gate-threshold voltage of -1.0 to -3.0 V, enabling robust turn-on with standard logic-level or microcontroller-compatible gate drivers. Its low output capacitance (Ciss = 4004 pF, Coss = 309 pF) and fast switching times (tD(ON) = 9.9 ns, tF = 53 ns) support efficient PWM-based power conversion up to several hundred kHz.
The device integrates a body diode with VSD = -0.7 to -1.2 V at -1 A and exhibits controlled reverse recovery (tRR = 19.5 ns, QRR = 11.6 nC), making it suitable for synchronous rectification and freewheeling paths where diode conduction is unavoidable.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -40 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 24 V automotive and industrial DC bus applications. |
| RDS(ON) @ -10 V | 15 mΩ - On-resistance measured at full gate drive; enables <1 W conduction loss at 50 A, critical for thermal management in compact layouts. |
| RDS(ON) @ -4.5 V | 23 mΩ - On-resistance at logic-level gate drive; supports direct MCU interface without level-shifting in battery-powered systems. |
| ID (TC = 25°C) | -55 A - Continuous drain current under ideal heatsink conditions; sets maximum steady-state power delivery capability. |
| TJ Range | -55 to +175°C - Extended junction temperature rating allows operation in engine bay, power inverters, and sealed enclosures without derating. |
| EAS | 69 mJ - Single-pulse avalanche energy rating; ensures survivability during load dump or inductive kick events without external snubbers. |
| Qg @ -10 V | 67 nC - Total gate charge required for full turn-on; determines driver strength requirement and switching loss trade-off. |
Pinout & Package
Package: TO252 (DPAK), surface-mount, thermally enhanced plastic case with exposed drain pad for PCB copper thermal spreading. Dimensions per JEDEC MS-012, 6.10 mm × 6.58 mm footprint, 1.59 mm height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current path collector | Connected to exposed metal tab; must be soldered to ≥1 in² 2 oz copper pour for RθJC = 1.7°C/W thermal performance. |
| Source (S) | Current return node / reference | Common connection point for gate drive return and load ground; defines VGS reference for P-channel operation. |
| Gate (G) | Control input | High-impedance terminal requiring ≤±20 V drive; 3.5 Ω gate resistance limits ringing and simplifies driver design. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including HTOL, TC, UHAST, and mechanical stress testing per JESD22 standards. |
| 100% UIS tested | Every production unit passes unclamped inductive switching test at IAS = -40 A, ensuring consistent ruggedness in real-world fault conditions. |
| +175°C rated | Guaranteed parametric performance and lifetime stability up to maximum junction temperature-no derating needed in high-ambient designs. |
| Green, RoHS-compliant | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb); meets EU RoHS 3 and automotive ELV requirements. |
| Low Qgd/Qgs ratio | Qgd = 11 nC vs Qgs = 13.2 nC enables Miller plateau control and reduces risk of shoot-through in half-bridge configurations. |
Applications
| Reverse Polarity Protection | Motor Control |
|---|---|
Use Scenario: Input protection circuit for 24 V vehicle infotainment modules subjected to accidental battery reversal during service. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as ideal diode replacement with near-zero forward drop and no heat sink requirement. Use Value: Eliminates 0.7 V diode drop, reducing power loss by >95% versus Schottky solutions while maintaining 175°C operational margin in confined chassis space. | Use Scenario: H-bridge upper-leg switch in 12–48 V brushed DC motor drives for HVAC actuators and seat adjusters. IC Role / Device Role / Timing Role: High-side switching element controlling motor voltage polarity; driven by isolated gate driver with bootstrap or charge pump supply. Use Value: 23 mΩ RDS(ON) at -4.5 V enables direct microcontroller drive, reducing BOM count and PCB area versus discrete level-shifted solutions. |
| Power Management | Industrial Power Supply OR-ing |
Use Scenario: Load switch in 36 V industrial PLC I/O module with hot-swap capability and overcurrent limiting. IC Role / Device Role / Timing Role: Controlled power rail enable/disconnect switch with fast turn-off (tF = 53 ns) for fault isolation. Use Value: 69 mJ EAS withstands repeated inductive transients from solenoid loads without degradation, extending field life beyond 10 years. | Use Scenario: Redundant 24 V DC power input OR-ing diode replacement in telecom base station power distribution units. IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET providing bidirectional fault blocking and zero-forward-drop current path. Use Value: 15 mΩ on-resistance cuts conduction loss to <0.5 W at 40 A, enabling passive cooling and eliminating forced-air fan noise in enclosed cabinets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH4007LPS-13 | Lower RDS(ON) (7.5 mΩ @ -10 V) but higher Qg (105 nC); TO263 package with larger thermal mass. | Better conduction efficiency at high current, but slower switching and less suitable for space-constrained TO252 footprints. | Select when thermal budget allows larger package and peak efficiency outweighs layout density constraints. |
| IPB80P04P4L-03 | Higher VDSS (-40 V same), lower RDS(ON) (8.5 mΩ @ -10 V), but not AEC-Q101 qualified; PG-TO263-3 package. | Acceptable for industrial use only; lacks automotive qualification and 175°C extended temperature validation. | Choose for cost-sensitive non-automotive applications where AEC-Q101 compliance is not mandated. |
Compared with DMTH4007LPS-13 and IPB80P04P4L-03, DMPH4013SK3-13 uniquely balances AEC-Q101 qualification, TO252 footprint compatibility, 175°C operation, and logic-level gate drive-making it optimal for space-limited, high-reliability automotive and industrial power switches where qualification and thermal headroom are non-negotiable.
Availability
DMPH4013SK3-13 is available at Aetrix Electronics and suitable for reverse polarity protection, motor control, and industrial power management applications requiring stable component supply, long-term lifecycle assurance, and automotive-grade traceability.
Supply support for DMPH4013SK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection devices for automotive, industrial, and consumer markets.
The DMPH4013SK3 belongs to Diodes' high-temperature P-channel MOSFET product line, engineered specifically for robust operation in harsh environments where extended junction temperature, AEC-Q101 compliance, and ruggedized switching performance are mandatory.
FAQ
What is the maximum gate-source voltage rating for DMPH4013SK3-13?
The absolute maximum gate-source voltage (VGSS) is ±20 V. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive should be limited to -10 V for full enhancement and -4.5 V for logic-level compatibility, both well within the safe operating range.
Does DMPH4013SK3-13 require a gate resistor for stability?
Yes-a series gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 229 pF) and PCB trace inductance. The internal gate resistance of 3.5 Ω alone is insufficient for robust EMI control in high-dI/dt applications like motor drives.
Can DMPH4013SK3-13 be used in parallel configurations?
Yes, but with careful attention to gate drive matching and current sharing. Its positive RDS(ON) temperature coefficient (normalized RDS(ON) increases with temperature) promotes inherent current balancing. Layout symmetry and individual gate resistors are essential to prevent thermal runaway.
Is the TO252 package of DMPH4013SK3-13 lead-free and RoHS compliant?
Yes-the device features a matte tin finish over copper leadframe and uses halogen- and antimony-free "Green" molding compound, fully compliant with EU RoHS 3 (2015/863/EU) and Diodes Incorporated's environmental specifications.
DMPH4013SK3-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 67 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4004 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.1W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
DMPH4013SK3-13 FAQ
1.How can I place an order for DMPH4013SK3-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMPH4013SK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMPH4013SK3-13 reliable?
The price and inventory of DMPH4013SK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMPH4013SK3-13 is usually 5 days.
3.What payment methods are accepted for DMPH4013SK3-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMPH4013SK3-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMPH4013SK3-13?
DMPH4013SK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMPH4013SK3-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMPH4013SK3-13?
For technical support, including DMPH4013SK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMPH4013SK3-13 requirements.
6.How does Aetrix verify that DMPH4013SK3-13 is sourced from the original manufacturer or authorized distributors?
All DMPH4013SK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMPH4013SK3-13 meets industry standards.
7.What is the process for return or replacement of DMPH4013SK3-13?
All DMPH4013SK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMPH4013SK3-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMPH4013SK3-13 part is unused and in its original packaging.
Return procedure for DMPH4013SK3-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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