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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMPH4015SSSQ-13

Name: DMPH4015SSSQ-13
Brand: Diodes Incorporated
SKU: DMPH4015SSSQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMPH4015SSSQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: DMPH4015SSSQ-13.pdf

Description:: MOSFET P-CHANNEL 40V 11.4A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:1,017

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Product details

Overview

DMPH4015SSSQ from Diodes Incorporated is a P-channel enhancement-mode MOSFET designed for high-reliability automotive power management. It delivers -40V V_DSS, 11 mΩ R_DS(ON) @ V_GS = -10V, and -11.4A continuous drain current at +25°C, operating up to +175°C junction temperature in SO-8 packaging - ideal for DC-DC converter high-side switching and analog power switches.

For engineers reviewing the DMPH4015SSSQ datasheet, DMPH4015SSSQ pinout, DMPH4015SSSQ application, or DMPH4015SSSQ equivalent, key selection criteria include AEC-Q101 qualification, low R_DS(ON) at -4.5V gate drive, 100% production-tested UIS capability, thermal performance under 70°C/W R_θJA (enhanced layout), and SO-8 leadframe compatibility with standard PCB assembly processes.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low on-resistance and fast switching in high-temperature automotive environments. Its -2.5V typical V_GS(TH) enables robust turn-on with standard logic-level gate drivers, while its 42.7 nC total gate charge at V_GS = -4.5V supports efficient PWM control in synchronous buck topologies.

The device integrates an intrinsic body diode rated for -3A continuous conduction and 260 mJ avalanche energy (L = 1 mH), enabling reliable operation during inductive load commutation without external freewheeling diodes in compact power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-40 V - Withstands reverse-biased drain-source voltage up to 40V in high-side switch configurations.
R_DS(ON) @ V_GS = -10V	11 mΩ max - Enables <1.1W conduction loss at -9.8A, critical for thermally constrained automotive modules.
R_DS(ON) @ V_GS = -4.5V	15 mΩ max - Supports direct interface with 5V microcontroller GPIOs without level-shifting.
I_D (T_A = +25°C)	-11.4 A - Sustains full-load current in 12V/24V automotive DC-DC converters with minimal derating.
T_J Operating Range	-55°C to +175°C - Qualified for under-hood applications including engine control units and battery management systems.
Q_g @ V_GS = -4.5V	42.7 nC - Determines gate driver current requirement (~4.3 mA avg for 1 MHz 50% duty cycle).
E_AS	260 mJ - Guarantees single-pulse inductive switching survivability in motor driver and solenoid control.

Pinout & Package

Package: SO-8 (Surface-Mount, 8-pin small-outline integrated circuit), molded green plastic housing with matte tin–annealed copper leadframe, UL 94V-0 rated, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Drain (D)	High-current output node; pins 1–5 internally paralleled for low-inductance, high-current path to PCB drain pad.
6, 7, 8	Source (S)	Power return path; pins 6–8 tied together to minimize source inductance and improve switching stability.
3 (center)	Gate (G)	Control input; pin 3 is isolated gate terminal requiring <100 nA leakage drive; routed away from drain noise paths.

Key Features

Feature	Design Value
AEC-Q101 qualified & PPAP capable	Meets automotive reliability standards for production deployment in safety-critical ECUs without additional qualification testing.
100% UIS tested in production	Every unit validated for unclamped inductive switching - eliminates field failure risk in relay/solenoid drive circuits.
R_DS(ON) stable over -55°C to +175°C	Normalized on-resistance remains ≤2.0× room-temp value across full operating range - ensures predictable power loss in hot under-hood zones.
Low C_iss (4234 pF) & C_rss (526 pF)	Reduces Miller effect and gate-drive power consumption - improves efficiency in high-frequency (>500 kHz) synchronous rectifiers.
Halogen- and antimony-free "Green" construction	Complies with automotive OEM environmental mandates (<900 ppm Br/Cl, <1000 ppm Sb) without sacrificing thermal or electrical performance.

Applications

Automotive Body Control Module (BCM)

12V Automotive DC-DC Converter

Use Scenario: High-side power distribution for lighting, window lift, and door lock actuators in modern BCMs.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling 12V rail delivery with fast turn-off to prevent backfeed during fault conditions.

Use Value: 11 mΩ R_DS(ON) minimizes voltage drop and heat generation during sustained 8–10A loads, extending module lifetime in sealed enclosures.

Use Scenario: Synchronous rectifier in non-isolated buck converter powering ADAS camera modules and infotainment processors.

IC Role / Device Role / Timing Role: Low-loss freewheeling path replacing Schottky diode; switched synchronously with high-side FET.

Use Value: 15 mΩ R_DS(ON) at -4.5V gate drive enables >95% efficiency at 3A–6A loads while reducing thermal footprint vs. discrete diode solutions.

Engine Control Unit (ECU) Power Sequencing

Automotive Analog Switch Matrix

Use Scenario: Controlled power-up sequencing of MCU, CAN transceiver, and sensor interfaces during cold cranking (6–8V battery).

IC Role / Device Role / Timing Role: Voltage-tolerant high-side switch enabling precise timing of subsystem enable signals via microcontroller GPIO.

Use Value: -40V V_DSS withstands load-dump transients up to ISO 7637-2 Pulse 5a (±60V), eliminating need for external TVS clamping.

Use Scenario: Signal routing multiplexer for multiple sensor inputs (e.g., pressure, temperature, position) into shared ADC channels.

IC Role / Device Role / Timing Role: Low-leakage analog switch with <1 μA I_DSS and <100 nA I_GSS, preserving signal integrity in precision measurement paths.

Use Value: Sub-1Ω on-resistance flatness across -40°C to +125°C ensures <0.1% gain error drift in ratiometric sensor bridges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMTH4007LPSQ-13	R_DS(ON) = 7.5 mΩ @ -10V; higher ID (14.5A); same SO-8 package but different pinout (G/S/D layout differs)	Better conduction efficiency at high current; requires PCB redesign due to non-identical terminal mapping	Select when thermal headroom is limited and layout revision is feasible.
IPD250N04LG	40V V_DSS; 2.5 mΩ R_DS(ON) @ -10V; TO-252 package; no AEC-Q101 qualification	Lower on-resistance but larger footprint and non-automotive qualified - unsuitable for PPAP-managed programs	Use only in non-automotive industrial power supplies where qualification is not required.

Compared with DMTH4007LPSQ-13 and IPD250N04LG, DMPH4015SSSQ uniquely balances AEC-Q101 compliance, SO-8 pinout compatibility, and 15 mΩ R_DS(ON) at -4.5V - making it optimal for cost-sensitive, space-constrained automotive modules needing drop-in qualification-ready replacement.

Availability

DMPH4015SSSQ is available at Aetrix Electronics and suitable for automotive body control modules, 12V DC-DC converters, and engine control unit power sequencing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMPH4015SSSQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets since 1960.

This device belongs to Diodes' AEC-Q101-qualified PowerMOS™ portfolio, engineered specifically for automotive power switching applications demanding robustness, thermal resilience, and PPAP documentation readiness.

FAQ

Is DMPH4015SSSQ suitable for hot-swap applications?

Yes - its -40V V_DSS, 100% production-tested UIS, and -55°C to +175°C operating range make it appropriate for controlled hot-swap insertion in automotive submodules. The low R_DS(ON) limits inrush current dissipation, and the integrated body diode supports bidirectional current flow during transient events without external components.

What is the maximum recommended gate resistor for PWM switching at 500 kHz?

A 6 Ω gate resistor is validated per datasheet Figure 11 (t_D(ON) = 13.2 ns, t_D(OFF) = 303 ns). For 500 kHz operation, this value balances switching speed against ringing and EMI; increasing beyond 10 Ω significantly degrades efficiency due to prolonged transition times and elevated Q_gd-driven losses.

Does DMPH4015SSSQ require a gate pull-down resistor in automotive applications?

Yes - a 10 kΩ to 100 kΩ pull-down resistor between gate and source is strongly recommended. This prevents unintended turn-on from ESD coupling or CAN bus noise transients, especially during vehicle power-up/down sequences where gate voltage may float near V_GS(TH) (-1.5V to -2.5V).

Can DMPH4015SSSQ replace N-channel MOSFETs in high-side configurations?

No - it is a P-channel device intended for high-side switching where source connects to the positive rail. Replacing an N-channel high-side switch would require gate drive above the rail (e.g., charge pump), which DMPH4015SSSQ does not support. Its design assumes gate-to-source control within 0V to -25V.

DMPH4015SSSQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 11.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 9.8A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 91 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 4234 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 1.8W

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

DMPH4015SSSQ-13 FAQ

1.How can I place an order for DMPH4015SSSQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMPH4015SSSQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMPH4015SSSQ-13 reliable?

The price and inventory of DMPH4015SSSQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMPH4015SSSQ-13 is usually 5 days.

3.What payment methods are accepted for DMPH4015SSSQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMPH4015SSSQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMPH4015SSSQ-13?

DMPH4015SSSQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMPH4015SSSQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMPH4015SSSQ-13?

For technical support, including DMPH4015SSSQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMPH4015SSSQ-13 requirements.

6.How does Aetrix verify that DMPH4015SSSQ-13 is sourced from the original manufacturer or authorized distributors?

All DMPH4015SSSQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMPH4015SSSQ-13 meets industry standards.

7.What is the process for return or replacement of DMPH4015SSSQ-13?

All DMPH4015SSSQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMPH4015SSSQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMPH4015SSSQ-13 part is unused and in its original packaging.

Return procedure for DMPH4015SSSQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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