Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMPH4016SK3Q-13

Part No.:
DMPH4016SK3Q-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixDMPH4016SK3Q-13.pdf
Description:
MOSFET BVDSS: 31V~40V TO252 T&R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,802

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMPH4016SK3Q-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET rated for -40V VDSS, 11 mΩ RDS(ON) @ VGS = -10V, and -80A continuous drain current at TC = +25°C, qualified to AEC-Q101 and rated for operation up to +175°C junction temperature. It is designed for high-reliability automotive power-management functions including DC-DC converters and analog switches.

For engineers reviewing the DMPH4016SK3Q-13 datasheet, DMPH4016SK3Q-13 pinout, DMPH4016SK3Q-13 application, or DMPH4016SK3Q-13 equivalent, key selection criteria include its -40V breakdown voltage, low on-resistance at -4.5V gate drive (15 mΩ), 100% production-tested UIS capability, TO252 package thermal performance (RθJC = 1.1 °C/W), and AEC-Q101 qualification status.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) and fast switching in high-temperature automotive environments. Its gate threshold voltage range (-1.5 V to -2.5 V) ensures robust turn-on margin under supply variation and temperature extremes.

The device integrates an intrinsic body diode with VSD = -0.7 V typical at -1 A, supporting synchronous rectification and bidirectional current handling in half-bridge configurations. Its Ciss = 5697 pF and Qg = 112 nC @ VGS = -10V define gate-drive energy requirements for efficient PWM control in 48V/12V DC-DC stages.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS-40 V - Maximum drain-source blocking voltage for 12V/48V automotive rail protection and switching
RDS(ON) @ VGS = -10V11 mΩ - Enables ≤0.88 W conduction loss at -80A, critical for thermally constrained engine-bay modules
RDS(ON) @ VGS = -4.5V15 mΩ - Supports logic-level gate drive from 5V microcontrollers without level-shifting circuitry
TJ max+175°C - Allows placement near heat sources (e.g., power inductors, engines) without derating
Qg @ VGS = -10V112 nC - Determines gate-driver peak current requirement (~2.2 A for 50 ns rise time)
EAS392 mJ - Specifies single-pulse avalanche energy handling for inductive load switching reliability
RθJC1.1 °C/W - Enables direct heatsinking via exposed drain pad for >100 W power dissipation capability

Pinout & Package

Package: TO252 (DPAK), surface-mount, with exposed drain pad for thermal and electrical connection. Molded plastic housing rated UL 94V-0; matte tin-plated copper leadframe.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Source)Source terminalReference node for gate drive; connects to high-side switch return path or ground-referenced load
Pin 2 (Gate)Control inputReceives negative gate voltage relative to source to enable conduction; requires <112 nC charge for full turn-on
Pin 3 (Drain)Power output / high-side switch nodeExposed metal pad - electrically and thermally connected to drain; must be soldered to PCB copper pour for thermal management

Key Features

Feature Design Value
AEC-Q101 qualified + PPAP capableMeets automotive qualification for use in safety-critical power systems with documented change control and traceable manufacturing
100% production UIS testedEach unit validated for unclamped inductive switching stress, eliminating need for external snubbers in relay/buzzer drivers
Low RDS(ON) at -4.5V15 mΩ enables direct interface with 5V logic controllers in battery disconnect and load-switch applications
+175°C operating ratingSupports placement in under-hood ECUs without thermal derating, reducing system-level heatsink size and cost
Halogen- and antimony-free "Green" constructionComplies with automotive environmental standards (Br+Cl <1500 ppm, Sb <1000 ppm) and RoHS 3

Applications

Automotive Battery Disconnect Switch 48V–12V DC-DC Converter High-Side Switch

Use Scenario: Isolating 12V battery during vehicle start-stop cycles or fault conditions to prevent parasitic drain.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET controlling main battery path; operates in static on/off mode with slow switching (<1 Hz).

Use Value: 11 mΩ RDS(ON) limits voltage drop to ≤0.88 V at 80A, preserving cranking voltage; +175°C rating ensures reliability near engine compartment heat sources.

Use Scenario: High-side synchronous rectifier in buck-derived 48V-to-12V conversion for ADAS domain controllers.

IC Role / Device Role / Timing Role: Power switch in high-frequency (200–500 kHz) PWM stage; driven by gate driver with precise timing control.

Use Value: 112 nC total gate charge and 146 ns tD(OFF) support efficient high-frequency operation; RθJC = 1.1 °C/W enables direct heatsinking to PCB for >100 W dissipation.

Engine Control Unit (ECU) Power Management Automotive Analog Signal Switching

Use Scenario: Supply regulation and load switching for fuel injector drivers, solenoid actuators, and sensor bias rails within ECU modules.

IC Role / Device Role / Timing Role: Low-duty-cycle power switch managing intermittent loads; subjected to repetitive avalanche stress during inductive turn-off.

Use Value: 392 mJ EAS and 100% UIS testing ensure robustness against inductive kickback without external clamping diodes.

Use Scenario: Bidirectional analog signal routing in automotive infotainment audio paths or sensor multiplexing (e.g., temperature, pressure).

IC Role / Device Role / Timing Role: Low-distortion analog switch; operated with VGS = 0 V (off) or -4.5 V (on) to minimize on-resistance variation across signal swing.

Use Value: 15 mΩ RDS(ON) at -4.5V provides flat, low-insertion-loss switching; body diode VSD = -0.7 V supports reverse current flow in AC-coupled paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMTH4007LPSQ-13-40V VDSS, 7.5 mΩ @ -10V, TO263 package, RθJC = 0.8 °C/WHigher thermal performance but larger footprint; requires different PCB layout and heatsink interfaceSelect when >136 W power dissipation is required and board space permits TO263 mounting.
IPB80P04P4L-02-40V VDSS, 8.0 mΩ @ -10V, TO263, AEC-Q101 qualified, higher Qg (150 nC)Lower RDS(ON) but slower switching; less suitable for >300 kHz DC-DC topologiesPrefer for static switching applications where lowest conduction loss dominates over switching loss.

Compared with DMTH4007LPSQ-13 and IPB80P04P4L-02, DMPH4016SK3Q-13 offers optimal balance of low gate charge (112 nC), TO252-compatible footprint, and verified 175°C operation-making it ideal for space-constrained, high-frequency automotive power stages where thermal interface simplicity matters.

Availability

DMPH4016SK3Q-13 is available at Aetrix Electronics and suitable for automotive battery management, 48V/12V DC-DC conversion, and ECU power distribution requiring stable component supply across extended temperature and long product lifecycles.

Supply support for DMPH4016SK3Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

DMPH4016SK3Q-13 belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for AEC-Q101-compliant high-temperature switching in engine control, body electronics, and powertrain subsystems.

FAQ

What is the maximum continuous drain current at TC = +100°C?

The DMPH4016SK3Q-13 supports -55 A continuous drain current at case temperature +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO252 package's junction-to-case path (RθJC = 1.1 °C/W) and must be validated against actual PCB copper area and ambient conditions.

Is the body diode suitable for reverse-current freewheeling in synchronous rectification?

Yes-the intrinsic body diode has VSD = -0.7 V typical at -1 A and tRR = 27 ns, enabling efficient reverse-current conduction in buck converter low-side operation. Its QRR = 22 nC minimizes recovery losses when paired with appropriate gate timing.

Does this part require a negative gate drive voltage relative to source?

Yes-this is a P-channel enhancement-mode MOSFET. Full enhancement requires VGS ≤ -4.5 V (minimum -10 V for rated RDS(ON)). Gate drive must be referenced to the source terminal, not ground; level-shifting or isolated gate drivers are needed in high-side configurations.

How is moisture sensitivity classified, and what reflow profile should be used?

The DMPH4016SK3Q-13 is rated Moisture Sensitivity Level 1 per J-STD-020, meaning it may be stored indefinitely at ≤30°C/85% RH and does not require baking before standard Pb-free reflow. Use Diodes' recommended profile: peak 260°C, 20–40 sec above 217°C, ramp rate ≤3°C/s.

DMPH4016SK3Q-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
11mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
112 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5697 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
4.9W (Ta), 136W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252 (DPAK)

DMPH4016SK3Q-13 FAQ

1.How can I place an order for DMPH4016SK3Q-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMPH4016SK3Q-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMPH4016SK3Q-13 reliable?

The price and inventory of DMPH4016SK3Q-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMPH4016SK3Q-13 is usually 5 days.

3.What payment methods are accepted for DMPH4016SK3Q-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMPH4016SK3Q-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMPH4016SK3Q-13?

DMPH4016SK3Q-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMPH4016SK3Q-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMPH4016SK3Q-13?

For technical support, including DMPH4016SK3Q-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMPH4016SK3Q-13 requirements.

6.How does Aetrix verify that DMPH4016SK3Q-13 is sourced from the original manufacturer or authorized distributors?

All DMPH4016SK3Q-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMPH4016SK3Q-13 meets industry standards.

7.What is the process for return or replacement of DMPH4016SK3Q-13?

All DMPH4016SK3Q-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMPH4016SK3Q-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMPH4016SK3Q-13 part is unused and in its original packaging.

Return procedure for DMPH4016SK3Q-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMPH4016SK3Q-13 Tags

  • DMPH4016SK3Q-13
  • DMPH4016SK3Q-13 PDF
  • DMPH4016SK3Q-13 Datasheet
  • DMPH4016SK3Q-13 Specifications
  • DMPH4016SK3Q-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMPH4016SK3Q-13
  • Buy DMPH4016SK3Q-13
  • DMPH4016SK3Q-13 Price
  • DMPH4016SK3Q-13 Distributor
  • DMPH4016SK3Q-13 Supplier
  • DMPH4016SK3Q-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER