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Diodes Incorporated DMPH4026SFVW-7

Part No.:
DMPH4026SFVW-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMPH4026SFVW-7.pdf
Description:
MOSFET BVDSS: 31V~40V POWERDI333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,965

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Product details

Overview

DMPH4026SFVW-7 from Diodes Incorporated is a P-channel enhancement-mode MOSFET rated for -40V VDSS, 25 mΩ RDS(ON) @ VGS = -10V, and -52A continuous drain current at TC = +25°C, operating up to +175°C junction temperature. It is designed for reverse-polarity protection and high-efficiency DC-DC power management in space-constrained automotive and industrial systems.

For engineers reviewing the DMPH4026SFVW-7 datasheet, DMPH4026SFVW-7 pinout, DMPH4026SFVW-7 application, or DMPH4026SFVW-7 equivalent, this device's PowerDI3333-8 package, low RDS(ON) at 4.5V gate drive, 100% UIS-tested ruggedness, and thermal performance at elevated ambient temperatures are critical selection criteria.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low on-resistance while preserving fast switching characteristics. Its gate threshold voltage (VGS(TH) = -0.8 to -1.8 V) ensures reliable turn-on with standard logic-level drivers, and its body diode exhibits tRR = 17.3 ns and QRR = 8.7 nC under 100 A/µs dI/dt conditions.

The device features a thermally enhanced PowerDI3333-8 package with exposed drain pad, delivering RθJC = 1.25 °C/W and RθJA = 38.4 °C/W on 2 oz copper FR-4 - enabling high-power density without external heatsinking in compact board layouts.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS -40 V - Withstands up to -40V drain-source blocking voltage before avalanche conduction.
RDS(ON) 25 mΩ max @ VGS = -10V, ID = -3A - Enables <1.3 W conduction loss at 52A, critical for thermal budget control.
ID (TC = 25°C) -52 A - Supports high-current reverse-polarity protection paths without derating at case temperature.
TJ Range -55°C to +175°C - Qualified for under-hood automotive and industrial environments where ambient exceeds 125°C.
Qg 45.8 nC @ VGS = -10V - Determines gate driver strength requirement for <76 ns total switching time (td(on) + tr + td(off) + tf).
EAS 109 mJ - Specifies single-pulse avalanche energy handling capability, supporting unclamped inductive load robustness.
Ciss 2064 pF - Impacts high-frequency gate drive impedance and EMI generation in synchronous buck or OR-ing configurations.

Pinout & Package

Package: PowerDI3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H); weight ≈ 0.03 g.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4 (Top-side D) Drain Four parallel drain terminals connected to internal die drain metallization and exposed bottom pad - primary heat path and high-current return node.
5 (Top-side G) Gate Single gate input controlling channel conduction; requires ≤±20V gate-source voltage per rating.
6, 7, 8 (Top-side S) Source Three parallel source terminals forming low-inductance source connection; referenced to system ground or input rail in high-side switch configurations.

Key Features

Feature Design Value
+175°C rated operation Enables deployment in engine bay, motor control, and industrial power supplies where ambient exceeds 125°C without thermal shutdown.
25 mΩ RDS(ON) @ -10V Reduces conduction loss by >40% vs. comparable SO-8 P-MOSFETs, directly improving efficiency in 12V/24V reverse-battery protection circuits.
PowerDI3333-8 footprint Occupies only 33% board area of SO-8 - allows denser PCB layout in space-limited modules like automotive ECUs and PoE injectors.
100% UIS tested Guarantees avalanche ruggedness across production lot - eliminates need for external snubbers in inductive load switching applications.
Halogen- and antimony-free Meets "Green" compliance (Br+Cl <1500 ppm, Sb <1000 ppm) required for EU automotive and industrial environmental certifications.

Applications

Automotive Reverse-Polarity Protection Industrial DC-DC Converter High-Side Switch

Use Scenario: Protects vehicle infotainment and ADAS ECUs from damage due to incorrect battery terminal connection during service or jump-starting.

IC Role / Device Role / Timing Role: P-channel high-side switch placed between battery input and downstream power rail; operates in static on/off state with no PWM timing requirements.

Use Value: Eliminates need for series diode drop (≥0.4V), preserving 12V system headroom and reducing heat dissipation by >80% vs. Schottky solutions.

Use Scenario: Controls power delivery to isolated 5V/3.3V rails in programmable logic controllers and sensor hubs powered from 24V industrial buses.

IC Role / Device Role / Timing Role: High-side load switch enabling controlled inrush current and hot-swap capability; driven by microcontroller GPIO with slow slew rate.

Use Value: Leverages low RDS(ON) at 4.5V gate drive to maintain <15 mV dropout at 20A, ensuring stable downstream regulator input voltage.

Server OR-ing Diode Replacement Motor Drive Power Stage Protection

Use Scenario: Replaces discrete Schottky diodes in redundant 48V server power supply OR-ing circuits to reduce forward voltage drop and improve efficiency.

IC Role / Device Role / Timing Role: Synchronous OR-ing FET used in back-to-back configuration; body diode conducts during dead-time, then channel conducts during active phase.

Use Value: Achieves <0.05V effective forward drop at 30A (vs. 0.35V for Schottky), cutting conduction loss by ~85% and enabling higher power density.

Use Scenario: Provides overvoltage and reverse-current protection for BLDC motor gate drivers and Hall sensor interfaces in HVAC blowers and pump controllers.

IC Role / Device Role / Timing Role: Input-stage protection switch placed upstream of motor controller IC; activated only during fault conditions (e.g., battery reversal or regen surge).

Use Value: Withstands 109 mJ avalanche energy and operates reliably at +150°C ambient - prevents latch-up or destruction during motor stall or short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMTH4007LPSQ-13 Same -40V rating but 7.3 mΩ RDS(ON) @ -10V; larger PowerFLAT 5x6 package; AEC-Q101 qualified. Targeted at automotive safety-critical systems requiring full qualification; not drop-in due to footprint and thermal pad layout differences. Select when AEC-Q101 compliance and lower RDS(ON) justify larger board area and cost premium.
SI7157DP-T1-GE3 40V P-MOSFET in PowerPAK SO-8; 22 mΩ RDS(ON) @ -10V; RθJA = 50°C/W (higher thermal resistance). Compatible with legacy SO-8 layouts but lacks +175°C rating and fails UIS testing per datasheet. Choose only for cost-sensitive, non-automotive designs where ambient stays below 105°C and inductive stress is absent.

Compared with DMTH4007LPSQ-13 and SI7157DP-T1-GE3, DMPH4026SFVW-7 uniquely balances ultra-compact PowerDI3333-8 size, +175°C operation, and production-tested UIS ruggedness - making it optimal for next-gen automotive and industrial power modules where space, temperature, and reliability are co-constrained.

Availability

DMPH4026SFVW-7 is available at Aetrix Electronics and suitable for automotive reverse-polarity protection, industrial DC-DC converter high-side switching, and server OR-ing diode replacement requiring stable component supply and long-term lifecycle support.

Supply support for DMPH4026SFVW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection devices for automotive, industrial, and computing markets.

This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-temperature power-switching applications where thermal density, ruggedness, and footprint reduction are design priorities.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMPH4026SFVW-7 supports -38A continuous drain current at TC = +100°C with VGS = -10V, as specified in the Absolute Maximum Ratings table. This derating reflects junction-to-case thermal resistance and safe operating area limits under steady-state conduction.

Does this MOSFET require a gate resistor for driving with a microcontroller GPIO?

A gate resistor is recommended to limit peak gate current and damp ringing, especially given its 45.8 nC total gate charge and 2.5 Ω intrinsic gate resistance. For 3.3V GPIO driving, a 10–22 Ω series resistor ensures controlled turn-on while avoiding excessive shoot-through risk in half-bridge configurations.

Can DMPH4026SFVW-7 be used in linear regulation mode?

No - this MOSFET is not characterized or rated for linear (ohmic) operation. Its Safe Operating Area (SOA) curve shows only pulsed operation above 10 µs, and thermal runaway risk is high under sustained VDS × ID > 2W conditions without active cooling. Use only in switching or saturated on/off modes.

Is the PowerDI3333-8 package compatible with standard reflow profiles?

Yes - the package meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 and is qualified for standard lead-free reflow profiles (peak 260°C). The matte tin finish on copper leadframe ensures solderability per MIL-STD-202, Method 208, and the UL 94V-0 molding compound withstands thermal cycling without delamination.

DMPH4026SFVW-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
9.3A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
25mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
45.8 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2064 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
2W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
PowerDI3333-8 (SWP) Type UX

DMPH4026SFVW-7 FAQ

1.How can I place an order for DMPH4026SFVW-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMPH4026SFVW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMPH4026SFVW-7 reliable?

The price and inventory of DMPH4026SFVW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMPH4026SFVW-7 is usually 5 days.

3.What payment methods are accepted for DMPH4026SFVW-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMPH4026SFVW-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMPH4026SFVW-7?

DMPH4026SFVW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMPH4026SFVW-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMPH4026SFVW-7?

For technical support, including DMPH4026SFVW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMPH4026SFVW-7 requirements.

6.How does Aetrix verify that DMPH4026SFVW-7 is sourced from the original manufacturer or authorized distributors?

All DMPH4026SFVW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMPH4026SFVW-7 meets industry standards.

7.What is the process for return or replacement of DMPH4026SFVW-7?

All DMPH4026SFVW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMPH4026SFVW-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMPH4026SFVW-7 part is unused and in its original packaging.

Return procedure for DMPH4026SFVW-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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