Diodes Incorporated DMPH4026SFVWQ-13

Overview

DMPH4026SFVWQ-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET rated for -40 V V_DSS, 25 mΩ R_DS(ON) @ V_GS = -10 V, and -52 A continuous drain current at T_C = +25°C in PowerDI3333-8 package. It is AEC-Q101 qualified, PPAP-capable, and designed for automotive reverse-polarity protection and DC-DC converter power switches operating up to +175°C junction temperature.

For engineers reviewing the DMPH4026SFVWQ-13 datasheet, DMPH4026SFVWQ-13 pinout, DMPH4026SFVWQ-13 application, or DMPH4026SFVWQ-13 equivalent, key selection criteria include its low R_DS(ON) at -4.5 V gate drive, 100% production UIS rating, thermal resistance of 1.25°C/W (junction-to-case), and compact PowerDI3333-8 footprint occupying only 33% board area vs. SO-8.

Technical Context

This MOSFET employs trench-gate silicon process technology optimized for high-temperature automotive operation. Its gate threshold voltage range (-0.8 V to -1.8 V) enables robust turn-on control with standard logic-level drivers, while the body diode exhibits 17.3 ns reverse recovery time and 8.7 nC Q_RR under 100 A/μs dI/dt conditions.

The device features a thermally enhanced exposed-drain pad in the PowerDI3333-8 package, delivering R_θJC = 1.25°C/W and enabling 3.9 W power dissipation on FR-4 with 2 oz copper thermal bias. Its C_iss = 2064 pF and Q_g = 45.8 nC at V_GS = -10 V support efficient high-frequency switching in synchronous buck converters.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H), 0.65 mm pitch, 8-terminal configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with DMTH4007LPSQ-13 and IPB80P04P4L-02, DMPH4026SFVWQ-13 uniquely balances AEC-Q101 compliance, +175°C operation, and ultra-compact PowerDI3333-8 packaging - making it optimal for space-constrained automotive modules where thermal density and qualification rigor are both critical.

Availability

DMPH4026SFVWQ-13 is available at Aetrix Electronics and suitable for automotive reverse-polarity protection, engine control unit power management, and start-stop system load switching requiring stable component supply across multi-year vehicle production cycles.

Supply support for DMPH4026SFVWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets since 1964.

This part belongs to Diodes' AEC-Q101-qualified PowerMOS portfolio, engineered specifically for automotive power-switching applications demanding high temperature resilience, low conduction loss, and rigorous process control.

FAQ

What is the maximum continuous drain current at +100°C case temperature?

The DMPH4026SFVWQ-13 supports -38 A continuous drain current at T_C = +100°C with V_GS = -10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI3333-8 package at elevated temperatures and must be validated against actual PCB layout and airflow conditions.

Does this MOSFET require a gate resistor for automotive ESD protection?

Yes - a 10 Ω to 47 Ω series gate resistor is recommended to dampen ringing and limit peak gate current during fast edge transitions, especially in noisy automotive environments. The device's R_g = 2.5 Ω internal gate resistance alone is insufficient for robust EMC performance per ISO 11452-4.

Can the PowerDI3333-8 package be hand-soldered reliably?

Hand-soldering is not recommended due to the exposed drain pad's thermal mass and fine 0.65 mm pitch. Reflow soldering per J-STD-020 Level 1 profile with preheat, soak, and peak temperature (260°C max) is required to ensure void-free solder joints and thermal integrity of the drain pad attachment.

How does the body diode forward voltage affect reverse-polarity protection performance?

V_SD = -0.7 V typical at -1 A ensures low forward drop during fault conditions where the body diode conducts, minimizing power dissipation (≤0.7 W) and preventing thermal runaway during sustained reverse-battery events at ambient temperatures up to +125°C.