Diodes Incorporated DMPH4029LFG-13

Overview

DMPH4029LFG-13 from Diodes Incorporated is a P-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for -40V V_DSS, 29 mΩ R_DS(ON) @ V_GS = -10V, and -8.0A continuous drain current at T_A = +25°C, designed for high-efficiency DC-DC converters and backlighting power stages.

For engineers reviewing the DMPH4029LFG-13 datasheet, DMPH4029LFG-13 pinout, DMPH4029LFG-13 application, or DMPH4029LFG-13 equivalent, key selection criteria include R_DS(ON) at low gate drive (-4.5V), +175°C junction rating, thermal resistance (R_θJA = 54°C/W with enhanced layout), and AEC-Q101 qualification status.

Technical Context

This MOSFET employs trench-gate silicon process to achieve low on-resistance while maintaining fast switching performance: t_D(ON) = 3.9 ns, t_D(OFF) = 83 ns, and Q_g = 34 nC at V_GS = -10V. Its body diode exhibits t_RR = 17.3 ns and Q_RR = 7.2 nC under IF = -3A, di/dt = 100 A/μs.

Thermal design is enabled by R_θJC = 6°C/W and dual thermal derating profiles: 1.2 W PD (R_θJA = 125°C/W, minimal pad) and 2.8 W PD (R_θJA = 54°C/W, 2 oz copper + thermal bias). It operates across -55°C to +175°C with V_GS(TH) = -1.0 to -3.0 V.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 - thermally enhanced surface-mount package with exposed drain paddle, 3.3 mm × 3.3 mm footprint, 0.8 mm height, and 0.65 mm pitch; occupies only 33% board area of SO-8.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with DMTH4007LPS-13, DMPH4029LFG-13 trades 12 mΩ higher R_DS(ON) for 18 nC lower Q_g, favoring high-frequency efficiency; versus SI7157DP-T1-GE3, it delivers 2.8 W power handling in 33% smaller area with superior thermal resistance.

Availability

DMPH4029LFG-13 is available at Aetrix Electronics and suitable for automotive LED drivers, industrial DC-DC converters, and portable display backlighting requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMPH4029LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' PowerMOS™ portfolio, engineered for high-reliability power switching in automotive, industrial, and computing applications where thermal resilience and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum gate-source voltage rating for DMPH4029LFG-13?

The absolute maximum V_GS is ±20 V. Exceeding this risks oxide breakdown and permanent gate damage. Recommended operating range is -10 V to 0 V for full enhancement; -4.5 V is sufficient for 95% R_DS(ON) performance in most applications.

Does DMPH4029LFG-13 have an integrated Schottky body diode?

No-it features a parasitic body diode inherent to the P-channel MOSFET structure. This diode has V_SD = -0.7 to -1.2 V at -1 A and t_RR = 17.3 ns, which is faster than standard silicon diodes but slower than discrete Schottky devices.

Can DMPH4029LFG-13 be used in synchronous rectification?

Yes-its low R_DS(ON) and fast body diode recovery make it suitable for synchronous rectification in buck or flyback topologies up to 500 kHz, provided gate drive timing avoids shoot-through and accounts for t_RR-induced overlap.

Is the PowerDI3333-8 package lead-free and halogen-free?

Yes-DMPH4029LFG-13 uses matte tin annealed over copper leadframe, complies with RoHS 2015/863/EU, and is halogen- and antimony-free (<900 ppm Br, <900 ppm Cl, <1000 ppm Sb), certified as a "Green" device per Diodes Incorporated standards.