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Diodes Incorporated DMPH6050SFGQ-13
- Part No.:
- DMPH6050SFGQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMPH6050SFGQ-13.pdf
- Description:
- MOSFET P-CH 60V PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:8,333
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Product details
Overview
DMPH6050SFGQ-13 from Diodes Incorporated is a 60V P-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for continuous drain current of –18A at TC = +25°C, RDS(ON) = 50 mΩ @ VGS = –10V, and qualified to AEC-Q101 for automotive use up to +175°C junction temperature. It serves as a high-reliability power switch in DC-DC converters and backlighting circuits.
For engineers reviewing the DMPH6050SFGQ-13 datasheet, DMPH6050SFGQ-13 pinout, DMPH6050SFGQ-13 application, or DMPH6050SFGQ-13 equivalent, key selection criteria include its –60V VDSS, low RDS(ON) at –4.5V gate drive, 100% unclamped inductive switching rating, thermal robustness to +175°C, and AEC-Q101 qualification with PPAP support.
Technical Context
This P-channel MOSFET employs a trench-gate process optimized for low RDS(ON) and fast switching in high-temperature automotive environments. Its gate threshold voltage (–1 to –3 V) enables reliable turn-on with standard logic-level drivers, and its body diode exhibits tRR = 13.6 ns and QRR = 7.4 nC under IF = –5A, di/dt = 100 A/μs conditions.
The device features a thermally enhanced PowerDI3333-8 package with exposed drain pad, delivering RθJC = 6°C/W and enabling 2.8 W power dissipation on a 2 oz copper FR-4 board with thermal bias. Its Ciss = 1293 pF and Qg = 24.1 nC @ VGS = –10V support efficient gate driving in synchronous buck and load-switch topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –60 V - Withstands reverse drain-source voltage up to 60V without breakdown, suitable for 48V automotive bus switching. |
| RDS(ON) | 50 mΩ @ VGS = –10V, ID = –7A - Minimizes conduction loss in high-current power paths; increases to 70 mΩ at VGS = –4.5V. |
| ID (continuous) | –18 A @ TC = +25°C - Supports high-side load switching in compact DC-DC stages with adequate heatsinking. |
| TJ max | +175°C - Enables operation in engine bay or under-hood modules where ambient exceeds 125°C. |
| Avalanche Energy | EAS = 30.8 mJ @ L = 0.1 mH - Sustains repetitive inductive switching events without failure, critical for relay replacement and motor control. |
| Qg | 24.1 nC @ VGS = –10V - Determines gate driver strength requirement; enables <50 ns total switching time with 3Ω source impedance. |
| Ciss | 1293 pF @ VDS = –30V - Impacts high-frequency gate drive loop stability and EMI behavior in SMPS designs. |
Pinout & Package
Package: PowerDI3333-8 - Thermally enhanced 8-pin surface-mount package with exposed drain pad (pins 1–4 and 5–8 are drain-connected), 3.3 mm × 3.3 mm footprint, 0.8 mm height, and RoHS-compliant matte tin finish over copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | High-current output node; electrically and thermally tied to exposed pad - must be soldered to large copper pour for thermal management. |
| 5, 6, 7, 8 | Drain (D) | Secondary drain terminals; redundant connection to same internal drain structure - improves current sharing and reduces bond wire inductance. |
| Source (S) | Source (S) | Reference node for gate drive; connects to system ground or high-side return path - requires low-inductance layout near gate driver. |
| Gate (G) | Gate (G) | Control input; threshold –1 to –3 V - compatible with 3.3V/5V logic; gate resistor selection must balance switching speed vs. ringing. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified + PPAP capable | Validated for automotive production use with full change control, IATF 16949 manufacturing, and traceable lot documentation. |
| 100% unclamped inductive switching (UIS) | Rated for repeated avalanche energy (EAS = 30.8 mJ), eliminating need for external snubbers in relay/motor drive applications. |
| PowerDI3333-8 package | 33% smaller board area than SO-8; 6°C/W RθJC enables higher power density in space-constrained modules. |
| –175°C operating range | Guaranteed functionality at TJ = +175°C supports placement near heat sources (e.g., power inductors, engines) without derating. |
| Halogen- and antimony-free "Green" | Meets EU RoHS 3 (2015/863/EU); Br+Cl <1500 ppm, Sb <1000 ppm - compliant with automotive OEM environmental requirements. |
Applications
| Automotive LED Backlighting | 48V Automotive Load Switch |
|---|---|
|
Use Scenario: Driving high-brightness LED strings in instrument clusters and center displays with PWM dimming. IC Role / Device Role / Timing Role: High-side P-channel switch controlling LED cathode return path; operates in linear or saturated mode during dimming transitions. Use Value: Low RDS(ON) minimizes power loss at 15A peak current; +175°C rating ensures reliability behind dash bezels with minimal airflow. |
Use Scenario: Hot-swap protection and controlled power-up of infotainment ECUs powered from 48V battery rail. IC Role / Device Role / Timing Role: High-side load switch with slew-rate controlled gate drive to limit inrush current during insertion. Use Value: 100% UIS rating prevents failure during connector mating arcs; small PowerDI3333-8 footprint saves PCB space in tight ECU layouts. |
| Automotive DC-DC Converter High-Side Switch | Engine Control Unit (ECU) Power Management |
|
Use Scenario: Synchronous rectification in 48V-to-12V buck converters supplying ADAS sensors and radar modules. IC Role / Device Role / Timing Role: Complementary high-side P-MOSFET paired with N-channel low-side switch; driven by dedicated gate driver IC. Use Value: Fast tF = 25.3 ns and low Qgd/Qgs ratio reduce switching losses; Coss = 86.3 pF enables stable zero-voltage switching behavior. |
Use Scenario: Isolating auxiliary power domains (e.g., CAN transceivers, memory, MCU cores) during sleep/wake transitions. IC Role / Device Role / Timing Role: Always-on power switch enabling selective domain shutdown; controlled via microcontroller GPIO with level-shifting. Use Value: Gate threshold of –1 to –3 V ensures clean turn-on with 3.3V logic; low IDSS < –1 µA prevents leakage-induced wake-up in deep sleep modes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH6005LSDQ-13 | VDSS = –60V, RDS(ON) = 4.5 mΩ @ –10V, but in larger SO-8 package; higher ID = –60A, no AEC-Q101 rating. | Higher current capacity suits industrial DC-DC, but lacks automotive qualification and thermal density of PowerDI3333-8. | Select when board space allows SO-8 and AEC-Q101 is not required; avoid for under-hood automotive use. |
| IPB80P04P4L-02 | VDSS = –40V, RDS(ON) = 3.2 mΩ @ –10V, TO-263 package; AEC-Q101 qualified, but lower voltage rating. | Not suitable for 48V systems due to 40V VDSS; better for 24V or 12V domains where lower RDS(ON) is prioritized over voltage margin. | Choose only for ≤36V nominal rails; verify system transient overvoltage does not exceed 40V. |
Compared with DMTH6005LSDQ-13 and IPB80P04P4L-02, DMPH6050SFGQ-13 uniquely balances AEC-Q101 compliance, +175°C operation, compact PowerDI3333-8 footprint, and –60V rating - making it optimal for space- and temperature-constrained 48V automotive power switches where qualification and reliability are mandatory.
Availability
DMPH6050SFGQ-13 is available at Aetrix Electronics and suitable for automotive LED backlighting, 48V load switching, and DC-DC converter high-side applications requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 traceability.
Supply support for DMPH6050SFGQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
DMPH6050SFGQ-13 belongs to Diodes' AEC-Q101-qualified Power MOSFET product line, engineered specifically for automotive power management where high temperature resilience, avalanche ruggedness, and PPAP-ready supply chain integrity are essential.
FAQ
What is the maximum continuous drain current for DMPH6050SFGQ-13 at 100°C case temperature?
The maximum continuous drain current is –12 A at TC = +100°C with VGS = –10V, per the Absolute Maximum Ratings table. This reflects thermal derating due to reduced channel conductivity and increased RDS(ON) at elevated temperatures, and assumes proper PCB copper thermal relief per Note 7 in the datasheet.
Does DMPH6050SFGQ-13 support gate drive from a 3.3V microcontroller without level shifting?
No - its gate threshold voltage range is –1 V to –3 V, requiring a negative gate-source voltage for full enhancement. A 3.3V GPIO cannot directly drive the gate; a charge pump, level-shifting driver, or complementary N-channel high-side configuration is necessary to achieve VGS ≤ –4.5V for low RDS(ON) operation.
How is the PowerDI3333-8 package thermally connected to the PCB?
The PowerDI3333-8 exposes the drain metal on the bottom surface as a thermal pad. It must be soldered to a minimum 1-inch square 2 oz copper plane on the PCB's bottom layer, with thermal vias to inner/ground planes, to achieve the specified RθJA = 54°C/W and 2.8 W power dissipation capability.
Is DMPH6050SFGQ-13 suitable for reverse polarity protection in a 48V automotive system?
Yes - with VDSS = –60V and surge capability validated by 100% UIS testing, it can block reverse battery connections up to –60V. Its low RDS(ON) minimizes voltage drop during normal operation, and AEC-Q101 qualification ensures reliability across automotive temperature and vibration profiles.
DMPH6050SFGQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.1A (Ta), 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1293 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMPH6050SFGQ-13 FAQ
1.How can I place an order for DMPH6050SFGQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMPH6050SFGQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMPH6050SFGQ-13 reliable?
The price and inventory of DMPH6050SFGQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMPH6050SFGQ-13 is usually 5 days.
3.What payment methods are accepted for DMPH6050SFGQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMPH6050SFGQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMPH6050SFGQ-13?
DMPH6050SFGQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMPH6050SFGQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMPH6050SFGQ-13?
For technical support, including DMPH6050SFGQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMPH6050SFGQ-13 requirements.
6.How does Aetrix verify that DMPH6050SFGQ-13 is sourced from the original manufacturer or authorized distributors?
All DMPH6050SFGQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMPH6050SFGQ-13 meets industry standards.
7.What is the process for return or replacement of DMPH6050SFGQ-13?
All DMPH6050SFGQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMPH6050SFGQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMPH6050SFGQ-13 part is unused and in its original packaging.
Return procedure for DMPH6050SFGQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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