My Inquiry
My Account
Diodes Incorporated DMPH6050SPDWQ-13
- Part No.:
- DMPH6050SPDWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMPH6050SPDWQ-13.pdf
- Description:
- MOSFET 2P-CH 60V 6.3A PWRDI50
- Quantity:
- Payment:
- Shipping:
Inventory:4,436
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMPH6050SPDWQ from Diodes Incorporated is a dual P-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for -60V VDSS, 48 mΩ RDS(ON) @ VGS = -10V, and continuous drain current of -26 A at TC = +25°C. It is AEC-Q101 qualified, PPAP-capable, and designed for high-reliability automotive power switching in engine management and body control modules.
For engineers reviewing the DMPH6050SPDWQ datasheet, DMPH6050SPDWQ pinout, DMPH6050SPDWQ application, or DMPH6050SPDWQ equivalent, key selection criteria include its -175°C rated junction temperature, wettable flank terminals for automated optical inspection, 100% unclamped inductive switching rating, and low Qg (14.5 nC @ VGS = -4.5V) enabling efficient high-frequency DC-DC converter operation.
Technical Context
This dual P-channel MOSFET integrates two matched, independently controllable power switches in a single thermally enhanced surface-mount package. Its symmetrical layout supports load-switching, half-bridge high-side configurations, and reverse-polarity protection circuits where gate drive simplicity and thermal coupling between channels are critical.
The device features an integrated body diode with tRR = 15.2 ns and QRR = 9.3 nC, optimized for synchronous rectification and fast recovery in automotive DC-DC stages. Its RθJC = 2.9°C/W enables direct heatsinking via the exposed drain pad, supporting high-power density designs under sustained +175°C ambient conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -60 V - Withstands up to -60V drain-source blocking voltage without breakdown. |
| RDS(ON) | 48 mΩ @ VGS = -10V - Enables <1.2 W conduction loss at -5A continuous current. |
| ID (TC = 25°C) | -26 A - Supports high-current load switching when mounted on thermally optimized PCBs. |
| Qg | 14.5 nC @ VGS = -4.5V - Reduces gate drive power and switching transition time in 100–500 kHz converters. |
| TJ max | +175°C - Certified for operation in under-hood automotive environments without derating. |
| EAS | 30 mJ - Sustains repetitive inductive energy spikes without failure in motor driver or solenoid control. |
| Ciss | 1525 pF - Defines input capacitance affecting gate drive loop stability and Miller effect in high-side switching. |
Pinout & Package
Package: PowerDI5060-8/SWP (Type UXD), thermally enhanced surface-mount package with exposed drain pads and wettable flank leads for solder joint inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D1) | Drain 1 | Primary high-side switch output terminal; electrically tied to exposed drain paddle for thermal conduction. |
| Pin 2 (S1) | Source 1 | Return path for Channel 1; referenced to gate drive ground for high-side configuration. |
| Pin 3 (G1) | Gate 1 | Control input for Channel 1; requires negative VGS to turn on (-1.0 to -3.0 V threshold). |
| Pin 4 (D2) | Drain 2 | Independent second high-side switch output; isolated but thermally coupled to D1 via shared paddle. |
| Pin 5 (S2) | Source 2 | Return path for Channel 2; allows independent load control or parallel operation with Channel 1. |
| Pin 6 (G2) | Gate 2 | Independent control input for Channel 2; enables dual-output sequencing or redundancy schemes. |
| Paddle (D1/D2) | Common Drain Thermal Pad | Primary heat dissipation path; must be soldered to large copper area for RθJC = 2.9°C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification & PPAP support | Validated for automotive production use with full change control, IATF 16949 manufacturing, and traceable lot documentation. |
| 100% unclamped inductive switching (UIS) | Guaranteed robustness against inductive kickback in relay/solenoid drivers without external snubbers. |
| Wettable flank leads | Enables automated optical inspection (AOI) of solder fillets on all side terminals, improving assembly yield in automotive SMT lines. |
| Low RDS(ON) temperature coefficient | RDS(ON) increases only ~1.8× from -55°C to +175°C at VGS = -10V, ensuring stable conduction across full automotive temperature range. |
| Halogen- and antimony-free "Green" construction | Complies with RoHS 3 and automotive environmental standards (<900 ppm Br/Cl, <1000 ppm Sb), supporting end-of-life recycling. |
Applications
| Engine Management Systems | Body Control Modules |
|---|---|
Use Scenario: High-side switching of fuel injectors and ignition coils in 12V/42V engine control units. IC Role / Device Role / Timing Role: Dual-channel P-MOSFET providing synchronized, current-limited drive with fast turn-off (tF = 45.3 ns) to prevent coil saturation. Use Value: Eliminates need for discrete flyback diodes and reduces board space by integrating two matched switches with shared thermal path. | Use Scenario: Reverse-polarity and overvoltage protection for infotainment head units and lighting controllers. IC Role / Device Role / Timing Role: Back-to-back P-channel configuration using both channels to block bidirectional fault currents. Use Value: Achieves <100 mΩ total protection path resistance while maintaining AEC-Q101 reliability and +175°C operation. |
| DC-DC Converters | Seat/Mirror Control Units |
Use Scenario: Synchronous rectification in 48V–12V buck converters for ADAS power domains. IC Role / Device Role / Timing Role: Low-Qg P-channel switch operating at 300 kHz with minimal gate drive loss and low tRR (15.2 ns). Use Value: Improves efficiency by >1.2% vs. Schottky diode solutions and enables compact magnetics due to reduced thermal margin requirements. | Use Scenario: Bidirectional motor control for power seat actuators and mirror positioning. IC Role / Device Role / Timing Role: H-bridge half-bridge driver using one channel for high-side and the other for low-side (with external N-MOSFET). Use Value: Simplifies gate drive design by eliminating bootstrap circuitry for high-side P-MOSFET, reducing BOM count and layout complexity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH6005LSDQ-13 | Lower RDS(ON) (3.8 mΩ @ -10V) but single-channel; requires two devices for dual function. | Higher cost and larger PCB footprint due to duplicated thermal pads and gate drive routing. | Select when higher current per channel (>30 A) is required and board space permits dual discrete placement. |
| IPD95R1K2P7ATMA1 | 950 V SiC MOSFET, single-channel, not AEC-Q101 qualified; significantly higher VGS(th) (2.5–4.5 V). | Not suitable for 12V/48V automotive loads; intended for high-voltage EV charging infrastructure. | Reject for this application-exceeds voltage rating, lacks automotive qualification, and incompatible gate drive architecture. |
Compared with DMTH6005LSDQ-13 and IPD95R1K2P7ATMA1, DMPH6050SPDWQ uniquely delivers dual-channel integration, AEC-Q101 compliance, and wettable flank inspection in a single PowerDI5060-8 package-reducing system-level validation effort and enabling compact, thermally robust automotive power stages.
Availability
DMPH6050SPDWQ is available at Aetrix Electronics and suitable for engine management systems, body control electronics, and DC-DC converters requiring stable component supply, automotive-grade traceability, and long-term lifecycle support.
Supply support for DMPH6050SPDWQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
This device belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for under-hood and chassis-mounted applications demanding AEC-Q101 qualification, extended temperature operation, and robust UIS performance.
FAQ
What is the maximum allowable gate-source voltage for reliable operation?
The absolute maximum VGS is ±20 V per the datasheet's Maximum Ratings table. Operation beyond ±15 V risks permanent gate oxide damage, especially at elevated temperatures. For robust design, limit VGS to -12 V during turn-on and ensure gate drive circuits include clamping to prevent overshoot during fast switching transients.
Can DMPH6050SPDWQ be used in parallel configurations across both channels?
Yes-both channels are electrically isolated but thermally coupled via the shared drain paddle, enabling balanced current sharing without external balancing resistors. Matching RDS(ON) tolerance (±20%) and symmetric PCB layout are required to maintain <10% current imbalance at full rated load and +125°C junction temperature.
Does the wettable flank feature require special stencil or reflow profile adjustments?
No-wettable flank leads are compatible with standard Type 3 solder paste and IPC-7527-compliant reflow profiles. The flank geometry is designed to form visible solder fillets under standard AOI systems without altering peak temperature (245°C max) or time above liquidus (60–90 s). No process changes are needed versus conventional SO-8 or PowerPAK packages.
How does the 100% UIS rating impact system-level reliability testing?
The 100% UIS rating means each device has been individually tested to sustain its full rated EAS (30 mJ) without parametric shift or failure. This eliminates the need for statistical safety margins in automotive solenoid or relay driver designs, directly supporting ISO 26262 ASIL-B functional safety claims when combined with appropriate current sensing and thermal monitoring.
DMPH6050SPDWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 6.3A (Ta), 26A (Tc)
- Rds On (Max) @ Id, Vgs:
- 48mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1525pF @ 30V
- Power - Max:
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI5060-8 (Type UX)
DMPH6050SPDWQ-13 FAQ
1.How can I place an order for DMPH6050SPDWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMPH6050SPDWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMPH6050SPDWQ-13 reliable?
The price and inventory of DMPH6050SPDWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMPH6050SPDWQ-13 is usually 5 days.
3.What payment methods are accepted for DMPH6050SPDWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMPH6050SPDWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMPH6050SPDWQ-13?
DMPH6050SPDWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMPH6050SPDWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMPH6050SPDWQ-13?
For technical support, including DMPH6050SPDWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMPH6050SPDWQ-13 requirements.
6.How does Aetrix verify that DMPH6050SPDWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMPH6050SPDWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMPH6050SPDWQ-13 meets industry standards.
7.What is the process for return or replacement of DMPH6050SPDWQ-13?
All DMPH6050SPDWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMPH6050SPDWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMPH6050SPDWQ-13 part is unused and in its original packaging.
Return procedure for DMPH6050SPDWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMPH6050SPDWQ-13 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
