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Diodes Incorporated DMS2085LSD-13
- Part No.:
- DMS2085LSD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMS2085LSD-13.pdf
- Description:
- MOSFET P-CH 20V 3.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,784
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Product details
Overview
DMS2085LSD from Diodes Incorporated is a P-channel enhancement-mode MOSFET with integrated Schottky diode in SO-8 package, rated for -20V VDSS, 85 mΩ RDS(on) @ VGS = -10V, and 1.0A Schottky forward current. It serves as a synchronous rectifier or high-side switch in compact DC-DC converters where low conduction loss and fast body-diode recovery are critical.
For engineers reviewing the DMS2085LSD datasheet, DMS2085LSD pinout, DMS2085LSD application, or DMS2085LSD equivalent, key selection criteria include its dual-function integration (MOSFET + Schottky), -4.5V gate drive compatibility, 33 ns body diode reverse recovery time, and thermal resistance of 78 °C/W under enhanced PCB layout - all essential for space-constrained power management designs.
Technical Context
This device integrates a P-channel MOSFET and a Schottky diode in a single SO-8 package to eliminate external diode placement and reduce parasitic inductance in buck converter synchronous rectification paths. Its gate threshold voltage range (-0.5 V to -2.2 V) enables reliable turn-on with standard logic-level controllers.
The integrated Schottky diode provides 400 mV forward voltage at 0.5 A and exhibits 33 ns reverse recovery time, minimizing switching losses during dead-time conduction. The MOSFET's 353 pF input capacitance and 7.8 nC total gate charge at -10 V support efficient high-frequency operation up to 1 MHz in point-of-load regulators.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -20 V - Maximum drain-source blocking voltage for 3.3 V/5 V input rail applications |
| RDS(on) | 85 mΩ @ VGS = -10 V - Enables ≤0.27 W conduction loss at 3.3 A continuous current |
| VF (Schottky) | 400 mV @ IF = 0.5 A - Reduces forward drop vs. standard PN diodes, improving light-load efficiency |
| trr | 33 ns - Limits reverse recovery charge (Qrr = 46 nC), suppressing voltage spikes in hard-switched topologies |
| RθJA | 78 °C/W (with 1-inch² copper) - Supports 1.0 W continuous dissipation at ≤70 °C ambient in industrial PCB layouts |
| Qg | 7.8 nC @ VGS = -10 V - Determines gate driver strength requirement for <15 ns turn-on delay |
| ID (cont) | -3.3 A @ TA = 25 °C - Sustains full-rated load without derating in thermally optimized layouts |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin, 4.9 mm × 6.0 mm footprint, 1.27 mm lead pitch). Molded green plastic, matte tin annealed terminals, JEDEC-compliant outline per Diodes Inc. package drawing SO-8.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate of P-channel MOSFET | Accepts negative gate drive relative to source; threshold ensures logic-level compatibility with -4.5 V control |
| 2 (S) | Source of MOSFET / Anode of Schottky | Common node for MOSFET source and Schottky anode; connects to input rail in high-side switch configuration |
| 3 (D) | Drain of MOSFET / Cathode of Schottky | Shared terminal for MOSFET drain and Schottky cathode; output node in buck sync rectifier topology |
| 4 (S) | Source of MOSFET (tied internally to Pin 2) | Dual-source connection improves current sharing and reduces package inductance in high-di/dt paths |
| 5 (D) | Drain of MOSFET (tied internally to Pin 3) | Dual-drain connection lowers RDS(on) contribution from bond wire resistance |
| 6 (S) | Source of MOSFET (tied internally to Pins 2 & 4) | Third source terminal enhances thermal and electrical path to PCB ground plane |
| 7 (D) | Drain of MOSFET (tied internally to Pins 3 & 5) | Third drain terminal supports higher pulsed current handling (IDM = -11.2 A) |
| 8 (S) | Source of MOSFET (tied internally to Pins 2, 4 & 6) | Fourth source terminal maximizes copper pour connectivity for thermal dissipation |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Schottky diode | Eliminates discrete diode placement, reducing board area by ≥25% and parasitic loop inductance in buck converters |
| Low RDS(on) at -4.5 V | 125 mΩ enables stable operation with 3.3 V microcontroller GPIO or dedicated gate drivers without level shifting |
| Fast body diode recovery | 33 ns trr prevents cross-conduction losses and EMI generation during synchronous rectifier dead-time |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets IPC-1752A Tier 1 reporting requirements |
| JEDEC-qualified reliability | Qualified to AEC-Q101 stress test standards for high-reliability industrial and automotive auxiliary systems |
Applications
| DC-DC Buck Converter | LED Backlight Driver |
|---|---|
|
Use Scenario: Synchronous rectification in 5 V → 3.3 V/1.8 V point-of-load converters powering FPGAs and SoCs. IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing external Schottky diode; operates in phase with PWM controller. Use Value: Achieves >92% efficiency at 2 A load due to 85 mΩ RDS(on) and 400 mV VF, reducing thermal footprint by 30% vs. discrete solutions. |
Use Scenario: Current regulation and reverse polarity protection in automotive LCD backlight modules. IC Role / Device Role / Timing Role: High-side switch controlling LED string anode; Schottky clamps inductive kickback during PWM dimming. Use Value: Withstands 20 V reverse blocking and delivers 1.0 A average current while maintaining <0.5 V dropout across temperature range. |
| USB Power Delivery Sink | Industrial Sensor Node Power Path |
|
Use Scenario: Input protection and power path management in USB-C PD sink devices with 20 V max input. IC Role / Device Role / Timing Role: Reverse-voltage protection switch; MOSFET blocks reverse current, Schottky handles transient surges. Use Value: Prevents backfeed into upstream source with -20 V VDSS rating and supports 20 A non-repetitive surge via integrated Schottky. |
Use Scenario: Low-quiescent-power supply switching in battery-operated IIoT sensor nodes with 3.6 V Li-ion input. IC Role / Device Role / Timing Role: Load switch enabling/disabling subsystem power; Schottky provides fail-safe reverse-current blocking. Use Value: Delivers 2.8 A continuous current at -4.5 V gate drive with only 1 µA IDSS leakage, extending battery life in sleep mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET-with-integrated-Schottky applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2085LSD-13 | N-channel counterpart with same RDS(on) and Schottky specs; requires high-side gate driver or bootstrap circuitry | Suitable only in low-side switch configurations or when controller supports N-channel sync rectification | Select only if existing design uses N-channel topology and gate drive architecture accommodates floating bias |
| SI7157DP-T1-GE3 | P-channel MOSFET + Schottky in PowerPAK SO-8; RDS(on) = 90 mΩ @ -10 V but higher Qg (10.5 nC) and no specified trr | Lacks documented body diode recovery performance; less suitable for high-frequency (>500 kHz) buck converters | Prefer for cost-sensitive, lower-frequency applications where 33 ns trr is not required |
Compared with DMN2085LSD-13 and SI7157DP-T1-GE3, DMS2085LSD offers superior switching fidelity via verified 33 ns trr and lower gate charge, making it optimal for high-efficiency, high-frequency DC-DC designs where diode recovery noise and driver loading are critical.
Availability
DMS2085LSD is available at Aetrix Electronics and suitable for DC-DC converters, LED backlighting, and USB power delivery systems requiring stable component supply, JEDEC-qualified reliability, and integrated MOSFET–Schottky functionality.
Supply support for DMS2085LSD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
DMS2085LSD belongs to Diodes' "PowerMOS+" family, engineered specifically for space-constrained synchronous rectification and high-side switching applications demanding low RDS(on), fast recovery, and integrated Schottky functionality.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMS2085LSD supports -2.7 A continuous drain current at TA = +70°C with standard FR-4 PCB layout (2 oz copper, minimum pad), and -3.4 A with enhanced thermal layout (1 inch² copper plate). This reflects its RθJA of 78 °C/W under optimized conditions, enabling robust operation in thermally constrained enclosures.
Can this device replace a discrete MOSFET + Schottky diode pair?
Yes - DMS2085LSD is designed as a drop-in replacement for discrete P-channel MOSFET and Schottky combinations in SO-8 footprints. Its pinout matches industry-standard dual-device layouts, and internal connections replicate the functional topology: shared source (P-MOS anode) and drain (P-MOS cathode), eliminating routing complexity and parasitic inductance.
Is the Schottky diode rated for repetitive 20 V reverse voltage?
Yes - the integrated Schottky diode has VRWM = 20 V (working peak reverse voltage) and VR = 20 V (DC blocking voltage), fully rated for continuous 20 V reverse bias in buck converter freewheeling paths. Its reverse leakage remains ≤80 µA at 20 V and 150°C, ensuring minimal standby loss.
Does this part meet automotive qualification requirements?
The DMS2085LSD is qualified to AEC-Q101 for discrete semiconductors and manufactured in IATF 16949-certified facilities. While not automotive-grade by default (lacking Q-suffix), it satisfies stress-test requirements for automotive auxiliary systems; Diodes offers the automotive-qualified DMS2085LSDQ-13 variant for PPAP-controlled production.
DMS2085LSD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 85mOhm @ 3.05A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.8 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 353 pF @ 15 V
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 1.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMS2085LSD-13 FAQ
1.How can I place an order for DMS2085LSD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMS2085LSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMS2085LSD-13 reliable?
The price and inventory of DMS2085LSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMS2085LSD-13 is usually 5 days.
3.What payment methods are accepted for DMS2085LSD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMS2085LSD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMS2085LSD-13?
DMS2085LSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMS2085LSD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMS2085LSD-13?
For technical support, including DMS2085LSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMS2085LSD-13 requirements.
6.How does Aetrix verify that DMS2085LSD-13 is sourced from the original manufacturer or authorized distributors?
All DMS2085LSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMS2085LSD-13 meets industry standards.
7.What is the process for return or replacement of DMS2085LSD-13?
All DMS2085LSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMS2085LSD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMS2085LSD-13 part is unused and in its original packaging.
Return procedure for DMS2085LSD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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