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Diodes Incorporated DMS2120LFWB-7
- Part No.:
- DMS2120LFWB-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-VDFN Exposed Pad
- Datasheet:
-
DMS2120LFWB-7.pdf
- Description:
- MOSFET P-CH 20V 2.9A 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:8,299
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Product details
Overview
DMS2120LFWB-7 from Diodes Incorporated is a P-channel enhancement-mode MOSFET integrated with a 20 V SBR® Super Barrier Rectifier in a single U-DFN3020-8 Type B package. It delivers RDS(on) of 95 mΩ at VGS = −4.5 V, −20 V VDSS, and 1 A average rectified output current, enabling compact DC-DC converter high-side switch and synchronous rectification in portable power management.
For engineers reviewing the DMS2120LFWB-7 datasheet, DMS2120LFWB-7 pinout, DMS2120LFWB-7 application, or DMS2120LFWB-7 equivalent, key selection criteria include verified gate threshold voltage (−1.3 V max), integrated SBR forward voltage (0.52 V at 1.0 A), thermal resistance (85 °C/W), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This dual-function device combines a logic-level P-channel MOSFET and a low-VF SBR rectifier on a shared die within a thermally optimized 3.0 × 2.0 mm U-DFN3020-8 Type B package. The MOSFET operates with VGS(th) ≤ −1.3 V and supports −2.9 A continuous drain current, while the SBR provides 20 V reverse blocking and 3 A non-repetitive surge capability.
The integrated architecture eliminates external diode placement and reduces parasitic inductance in buck converter topologies. Its low-profile 0.5 mm max height and NiPdAu-plated terminals support fine-pitch automated assembly and high-density PCB layouts in space-constrained applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −20 V - Enables use as high-side switch in 12 V and 5 V input systems with margin against transients |
| RDS(on) @ VGS = −4.5 V | 95 mΩ - Delivers <120 mW conduction loss at 1.0 A load, critical for efficiency in battery-powered devices |
| VGS(th) Max | −1.3 V - Ensures full enhancement with standard 1.8 V/2.5 V/3.3 V logic-level gate drive |
| SBR VF @ 1.0 A | 0.52 V - Reduces forward drop by ~30% vs. Schottky diodes, lowering heat generation in synchronous rectifiers |
| TJ Range | −55 to +150 °C - Supports operation in under-hood automotive environments and industrial temperature zones |
| RθJA | 85 °C/W - Requires minimal copper area (2 oz FR-4) for thermal management in compact designs |
| AEC-Q101 Qualified | Yes - Validated for automotive electronics per stress test requirements including HTGB, HTRB, and TC |
Pinout & Package
Package: U-DFN3020-8 Type B, 3.0 mm × 2.0 mm × 0.5 mm max, lead-free, halogen-free, RoHS-compliant molded plastic case with NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (A) | MOSFET Source / SBR Anode | Common node connecting MOSFET source and SBR anode - used as power return path in buck high-side configuration |
| 2 (G) | MOSFET Gate | Logic-level control input; requires no level-shifting for 1.8–3.3 V microcontrollers |
| 3 (K) | MOSFET Drain / SBR Cathode | Shared high-side switching node; carries both MOSFET channel current and SBR reverse recovery current |
| 4 (S) | MOSFET Source | Dedicated MOSFET source terminal - enables Kelvin sensing or separate routing from SBR anode if needed |
| 5 (D) | SBR Cathode | Dedicated SBR cathode terminal - allows independent connection to output rail for optimized layout |
| 6 (A) | SBR Anode | Dedicated SBR anode terminal - decouples SBR anode from MOSFET source for flexible topology implementation |
| 7 (K) | MOSFET Drain | Dedicated MOSFET drain terminal - supports discrete routing to input rail or inductor node |
| 8 (G) | MOSFET Gate | Second gate terminal - provides low-inductance parallel gate connection for improved switching consistency |
Key Features
| Feature | Design Value |
|---|---|
| Integrated SBR rectifier | Eliminates external diode, reducing BOM count and board area by >30% in buck converters |
| Low RDS(on) at 1.8 V VGS | 150 mΩ typ - enables efficient operation directly from single-cell Li-ion (2.8–4.2 V) gate drive |
| Thermally enhanced U-DFN3020-8 | 85 °C/W RθJA - achieves 1.5 W power dissipation with minimal PCB copper, supporting fanless designs |
| AEC-Q101 qualification | Validated for automotive power modules, infotainment supplies, and body control units requiring long-term reliability |
| 0.5 mm max profile | Enables ultra-thin end equipment such as wearables and slim consumer tablets where Z-height is constrained |
Applications
| Automotive Body Control Module (BCM) | USB-C Power Delivery Sink |
|---|---|
Use Scenario: Regulating 12 V battery input to 5 V/3.3 V rails for door lock actuators, LED lighting, and sensor interfaces. IC Role / Device Role / Timing Role: High-side P-channel MOSFET switch with integrated SBR for synchronous buck conversion and reverse polarity protection. Use Value: Eliminates need for external Schottky diode and reduces thermal footprint by 40%, meeting AEC-Q101 and ISO 16750-2 transient requirements. | Use Scenario: Providing programmable power supply (PPS) regulation in portable chargers and power banks supporting USB-C PD 3.0. IC Role / Device Role / Timing Role: Input-side synchronous rectifier and high-side switch in buck controller feedback loop. Use Value: Low 0.52 V SBR forward voltage minimizes conduction loss at 3 A loads, improving efficiency from 89% to 92.5% at 5 V/3 A output. |
| Industrial IoT Sensor Node | Medical Portable Diagnostic Device |
Use Scenario: Powering ultra-low-power MCU, BLE radio, and analog front-end from coin-cell or energy-harvesting sources. IC Role / Device Role / Timing Role: Load switch and reverse-current blocking element with integrated SBR for cold-start boost converter output stage. Use Value: −1.3 V VGS(th) ensures reliable turn-on down to 1.8 V supply, extending usable battery life by 18% vs. standard −2.5 V threshold MOSFETs. | Use Scenario: Supplying isolated 3.3 V rail for ADC, display driver, and wireless telemetry in handheld ultrasound and glucose monitors. IC Role / Device Role / Timing Role: Compact, low-noise high-side switch with integrated SBR for EMI-sensitive analog power domains. Use Value: 65 pF Coss and 54 pF Crss minimize switching noise coupling into sensitive analog signal paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET + integrated rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2016LFG-7 | Separate P-MOSFET (no integrated SBR); RDS(on) = 100 mΩ @ −4.5 V; same U-DFN3020-8 package | Requires external SBR or Schottky; higher BOM cost and layout complexity | Select when discrete optimization of MOSFET and rectifier timing is required, e.g., for zero-voltage switching control |
| DMT6009LPS-13 | P-channel MOSFET only; RDS(on) = 9.5 mΩ @ −10 V; SO-8 package; no SBR integration | Larger footprint and higher RθJA (100 °C/W); needs external diode and gate driver | Choose for higher-current (>5 A) applications where thermal headroom and discrete layout control outweigh size constraints |
Compared with DMN2016LFG-7 and DMT6009LPS-13, DMS2120LFWB-7 uniquely integrates a qualified SBR to reduce component count and layout area while maintaining AEC-Q101 compliance and sub-1 V gate threshold - making it optimal for space- and reliability-critical 1–3 A DC-DC stages.
Availability
DMS2120LFWB-7 is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery sinks, and industrial IoT sensor nodes requiring stable component supply across extended product lifecycles.
Supply support for DMS2120LFWB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
The DMS2120LFWB-7 belongs to Diodes' SBR-integrated power MOSFET product line, designed specifically for space-constrained, high-reliability DC-DC conversion where reduced component count and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum continuous drain current rating for the DMS2120LFWB-7 MOSFET section?
The DMS2120LFWB-7 MOSFET is rated for −2.9 A continuous drain current at TA = +25°C with proper PCB thermal management (2 oz copper pad). Derating applies above 25°C ambient, reaching ~−1.4 A at +85°C ambient per the datasheet's thermal curves.
Does the integrated SBR replace an external freewheeling diode in buck converter designs?
Yes - the integrated SBR serves as the synchronous rectifier or freewheeling path in buck topologies. Its 0.52 V forward voltage at 1.0 A and 20 V reverse blocking eliminate the need for an external Schottky diode, reducing conduction loss and PCB area without compromising reverse recovery performance.
Can the DMS2120LFWB-7 be used in hot-swap or load-switch applications?
Yes - its −20 V VDSS, −1.3 V VGS(th), and low RDS(on) support controlled inrush limiting and reverse-current blocking. The integrated SBR provides inherent reverse-polarity protection when configured with source tied to input, satisfying IEC 61000-4-5 surge immunity requirements in protected load-switch designs.
Is the U-DFN3020-8 Type B package compatible with standard reflow profiles?
Yes - the package is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C). Its NiPdAu finish ensures robust solderability per MIL-STD-202, Method 208, and the 0.3 mm pin pitch is compatible with 5-mil stencil apertures and fine-pitch SPI/AXI inspection.
DMS2120LFWB-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-VDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 95mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 632 pF @ 10 V
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN3020B (3x2)
DMS2120LFWB-7 FAQ
1.How can I place an order for DMS2120LFWB-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMS2120LFWB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMS2120LFWB-7 reliable?
The price and inventory of DMS2120LFWB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMS2120LFWB-7 is usually 5 days.
3.What payment methods are accepted for DMS2120LFWB-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMS2120LFWB-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMS2120LFWB-7?
DMS2120LFWB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMS2120LFWB-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMS2120LFWB-7?
For technical support, including DMS2120LFWB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMS2120LFWB-7 requirements.
6.How does Aetrix verify that DMS2120LFWB-7 is sourced from the original manufacturer or authorized distributors?
All DMS2120LFWB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMS2120LFWB-7 meets industry standards.
7.What is the process for return or replacement of DMS2120LFWB-7?
All DMS2120LFWB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMS2120LFWB-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMS2120LFWB-7 part is unused and in its original packaging.
Return procedure for DMS2120LFWB-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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