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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMS2220LFDB-7

Name: DMS2220LFDB-7
Brand: Diodes Incorporated
SKU: DMS2220LFDB-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMS2220LFDB-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: DMS2220LFDB-7.pdf

Description:: MOSFET P-CH 20V 3.5A 6-DFN

Quantity:: RFQ Add To RFQ list

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Inventory:2,997

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Product details

Overview

DMS2220LFDB-7 from Diodes Incorporated is a P-channel enhancement-mode MOSFET integrated with a 20 V SBR® Super Barrier Rectifier in a single U-DFN2020-6 Type B package. It delivers R_DS(on) of 95 mΩ at V_GS = −4.5 V, −20 V V_DSS, and 1 A average rectified output current, enabling compact DC-DC converter high-side switch and synchronous rectification in portable power management.

For engineers reviewing the DMS2220LFDB-7 datasheet, DMS2220LFDB-7 pinout, DMS2220LFDB-7 application, or DMS2220LFDB-7 equivalent, key selection criteria include verified gate threshold voltage (−1.3 V max), integrated SBR forward voltage (0.52 V at 1.0 A), thermal resistance (89 °C/W), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This dual-die device integrates a P-channel MOSFET (Q1) and an SBR rectifier (D1) on a shared leadframe within a monolithic U-DFN2020-6 Type B package. The MOSFET operates with V_GS(th) ≤ −1.3 V and supports −3.5 A continuous drain current, while the SBR provides low VF (0.52 V @ 1 A) and 20 V reverse blocking capability.

The co-packaged topology eliminates external routing between switch and rectifier, reducing parasitic inductance and layout area. Its 0.5 mm max height and NiPdAu-plated terminals support fine-pitch automated assembly and meet J-STD-020 Level 1 moisture sensitivity requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−20 V: Maximum drain-source voltage rating for safe high-side switching in 12 V automotive and 5–12 V industrial rails.
R_DS(on) @ V_GS = −4.5 V	95 mΩ max: Enables <100 mW conduction loss at 1 A load, critical for thermally constrained portable designs.
V_GS(th)	−0.45 to −1.3 V: Ensures reliable turn-on with low-voltage controllers (e.g., 1.8 V/2.5 V logic outputs).
SBR V_F @ I_F = 1.0 A	0.52 V typ: Reduces forward drop by ~30% vs. standard Schottky, improving efficiency in buck converter freewheel paths.
I_O (SBR)	1 A avg: Supports sustained output current in space-constrained 1–2 W DC-DC modules without external heatsinking.
R_θJA	89 °C/W: Validated on FR-4 with minimum 2 oz copper pad; enables 1.4 W power dissipation at +70 °C ambient.
AEC-Q101	Qualified: Meets stress test requirements for automotive under-hood and infotainment applications.

Pinout & Package

Package: U-DFN2020-6 Type B - 2.0 mm × 2.0 mm × 0.5 mm profile, molded green compound (UL 94V-0), NiPdAu-plated copper leadframe, 0.0065 g weight.

Pin/Terminal	Circuit Role	Design Meaning
1 (A)	No Connect	Internal die paddle tie-off; electrically isolated, no PCB connection required.
2 (D)	MOSFET Drain / SBR Cathode	Common node linking MOSFET drain and SBR cathode; forms high-side switch output and rectifier output terminal.
3 (S)	MOSFET Source / SBR Anode	Common source-anode node; serves as return path for both MOSFET conduction and SBR forward current.
4 (G)	MOSFET Gate	Control input for P-channel MOSFET; accepts logic-level gate drive with −1.3 V max V_GS(th).
5 (K)	SBR Cathode	Redundant cathode connection (tied internally to Pin 2); improves current sharing and thermal distribution in high-current layouts.
6 (Q1)	MOSFET Drain	Redundant drain connection (tied internally to Pin 2); enhances power handling and reduces bond wire inductance.

Key Features

Feature	Design Value
Integrated SBR rectifier	Eliminates discrete diode placement, reduces BOM count and PCB area by >30% in buck converter footprints.
Low-profile 0.5 mm height	Enables use in ultra-thin consumer devices (e.g., wearables, TWS earbuds) where Z-height is constrained.
−1.3 V max gate threshold	Guarantees full enhancement with 1.8 V GPIOs, removing need for level-shifting circuitry in MCU-controlled power stages.
AEC-Q101 qualified	Validated for temperature cycling, HTRB, and ESD per automotive stress standards-no requalification needed for Tier 1 designs.
NiPdAu terminal finish	Ensures robust solderability and long-term intermetallic stability under thermal cycling and humidity exposure.

Applications

USB Power Delivery Sink

Automotive Cabin Lighting

Use Scenario: 5–20 V USB PD input stage regulating 5 V/3 A output using synchronous buck topology.

IC Role / Device Role / Timing Role: High-side P-MOSFET switch and integrated SBR freewheel diode in single-package synchronous rectification.

Use Value: Reduces component count by one device versus discrete MOSFET+Schottky solution, lowering layout complexity and EMI from loop area reduction.

Use Scenario: LED driver for interior dome lights powered from 12 V battery with PWM dimming and reverse-polarity protection.

IC Role / Device Role / Timing Role: Reverse-battery protection switch (P-MOSFET) with integrated SBR clamping transient energy during load dump events.

Use Value: Withstands 20 V reverse transients and delivers 1 A continuous current without external TVS, meeting ISO 7637-2 Pulse 5a requirements.

Portable Medical Monitor

Industrial Sensor Node

Use Scenario: Dual-rail (3.3 V & 5 V) power supply for low-power ARM Cortex-M microcontroller and analog front-end in handheld diagnostics.

IC Role / Device Role / Timing Role: Input protection and power-path switch with integrated SBR for efficient low-I_Q operation during battery backup mode.

Use Value: 1 µA max IDSS and 0.52 V SBR VF minimize standby losses, extending battery life beyond 72 hours on coin-cell backup.

Use Scenario: 24 V to 3.3 V step-down converter powering LoRaWAN sensor nodes deployed in remote field enclosures.

IC Role / Device Role / Timing Role: Primary switching element and synchronous rectifier in high-efficiency buck regulator operating at −40 to +85 °C ambient.

Use Value: AEC-Q101 qualification and 150 °C T_J(max) ensure stable operation across extended industrial temperature range without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET + integrated rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2020LFG-7	Same U-DFN2020-6 package but lacks integrated SBR; discrete rectifier required.	Higher BOM cost and larger PCB footprint due to added Schottky diode and routing.	Select when design requires independent optimization of MOSFET and rectifier parameters.
DMTH2006LPSQ-13	60 V rated P-MOSFET in SO-8; no integrated rectifier; higher R_DS(on) (100 mΩ @ −4.5 V).	SO-8 thermal performance limits continuous current to ~2.5 A; unsuitable for space-constrained layouts.	Select only if higher voltage margin (>20 V) or through-hole assembly is mandatory.

Compared with DMN2020LFG-7 and DMTH2006LPSQ-13, DMS2220LFDB-7 uniquely combines AEC-Q101 qualification, integrated SBR, and sub-1 mm height-enabling smaller, more efficient, and automotive-compliant power stages without trade-offs in thermal or electrical performance.

Availability

DMS2220LFDB-7 is available at Aetrix Electronics and suitable for USB Power Delivery sinks, automotive cabin lighting, portable medical monitors, and industrial sensor nodes requiring stable component supply and long-term lifecycle assurance.

Supply support for DMS2220LFDB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

The DMS2220LFDB belongs to Diodes' SBR-integrated power MOSFET product line, designed specifically to reduce footprint and improve efficiency in space- and thermally constrained DC-DC converters for automotive and portable electronics.

FAQ

What is the maximum junction temperature for DMS2220LFDB-7?

The absolute maximum junction temperature is +150 °C, validated per AEC-Q101 stress testing. Thermal derating begins above +70 °C ambient, with full 1.4 W power dissipation supported only up to +70 °C on FR-4 with minimum 2 oz copper pad layout per datasheet Figure 16.

Can Pin 1 (NC) be connected to ground or left floating?

Pin 1 is a no-connect terminal tied to internal mold compound; it must remain unconnected on PCB. Connecting it to ground or any net violates the mechanical design and may compromise package integrity or thermal performance per AP02002 layout guidelines.

How does the integrated SBR differ from a standard Schottky diode in this device?

The SBR exhibits lower forward voltage (0.52 V @ 1 A vs. typical 0.65–0.75 V for Schottky), reduced reverse leakage (<100 µA @ 20 V), and superior temperature stability-verified in Figures 12 and 13 of DS31546 Rev. 9-2, enabling higher efficiency in warm environments.

Is DMS2220LFDB-7 suitable for reverse polarity protection in 24 V systems?

No-its SBR and MOSFET share a 20 V V_RWM/V_DSS rating. Applying 24 V exceeds maximum reverse blocking voltage and risks catastrophic failure. It is rated only for ≤20 V nominal input systems such as 12 V automotive or 5–12 V industrial rails.

DMS2220LFDB-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 95mOhm @ 2.8A, 4.5V

Vgs(th) (Max) @ Id:: 1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 632 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.4W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type B)

DMS2220LFDB-7 FAQ

1.How can I place an order for DMS2220LFDB-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMS2220LFDB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMS2220LFDB-7 reliable?

The price and inventory of DMS2220LFDB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMS2220LFDB-7 is usually 5 days.

3.What payment methods are accepted for DMS2220LFDB-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMS2220LFDB-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMS2220LFDB-7?

DMS2220LFDB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMS2220LFDB-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMS2220LFDB-7?

For technical support, including DMS2220LFDB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMS2220LFDB-7 requirements.

6.How does Aetrix verify that DMS2220LFDB-7 is sourced from the original manufacturer or authorized distributors?

All DMS2220LFDB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMS2220LFDB-7 meets industry standards.

7.What is the process for return or replacement of DMS2220LFDB-7?

All DMS2220LFDB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMS2220LFDB-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMS2220LFDB-7 part is unused and in its original packaging.

Return procedure for DMS2220LFDB-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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