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Diodes Incorporated DMS3012SFG-13

Part No.:
DMS3012SFG-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMS3012SFG-13.pdf
Description:
MOSFET N-CH 30V 12A POWERDI3333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,893

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Product details

Overview

DMS3012SFG-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET monolithically integrated with a Schottky diode in a single PowerDI3333-8 die, delivering 7.3 mΩ RDS(ON) @ VGS = 10V, 12 A continuous drain current at +25°C, and 4.3 nC Qrr, optimized for high-frequency DC-DC converter power stages.

For engineers reviewing the DMS3012SFG-13 datasheet, DMS3012SFG-13 pinout, DMS3012SFG-13 application, or DMS3012SFG-13 equivalent, key selection criteria include its integrated Schottky's low VSD (0.45 V), low gate charge ratio (Qgd/Qg ≈ 16%), 100% UIS rating, and thermally efficient 3333-8 footprint occupying only 33% board area vs. SO-8.

Technical Context

This DIOFET device uses a patented monolithic process to co-integrate an N-channel MOSFET and Schottky diode on one silicon die, eliminating parasitic body diode conduction losses and enabling fast reverse recovery (trr = 13.1 ns) without external diode placement.

Its gate threshold voltage (VGS(TH) = 1.0–2.5 V) supports 4.5 V logic-level drive, while low input capacitance (Ciss = 1296–4310 pF) and 0.26–2.6 Ω gate resistance enable stable high-frequency switching up to 1 MHz in synchronous buck topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30 V - Maximum blocking voltage in off-state; suitable for 24 V rail and 12 V automotive input systems.
RDS(ON) 7.3 mΩ @ VGS = 10 V - Enables <1.0 W conduction loss at 12 A, critical for high-efficiency power stages.
ID (continuous) 12 A @ TA = +25°C - Sustained output capability with 2.2 W power dissipation on 1-in² copper pad.
VSD 0.45 V @ IS = 1 A - Integrated Schottky reduces freewheeling loss by ~60% vs. standard MOSFET body diode.
Qrr 4.3 nC - Low reverse recovery charge minimizes switching loss and EMI during hard commutation.
RθJA 58 °C/W (with 1-in² copper) - Enables operation up to +125°C ambient in compact DC-DC modules.
trr 13.1 ns - Fast recovery supports >500 kHz PWM frequencies without shoot-through risk.

Pinout & Package

Package: PowerDI3333-8 - thermally enhanced, lead-free, halogen-free surface-mount package with exposed drain paddle for low RθJC = 11 °C/W; footprint occupies 3.3 × 3.3 mm, 33% area of SO-8.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4 Source Common source connection for all three internal MOSFET cells; tied to PCB ground plane for low-inductance return path.
5, 6, 7, 8 Drain Parallel-connected drain terminals linked to internal Schottky cathode; requires thermal pad connection to heatsink plane.
Gate Control terminal Single gate pad (pin not assigned; located between pins 4 and 5 per bottom view); accepts 4.5–10 V logic-level drive with 31.6 nC total gate charge.

Key Features

Feature Design Value
Monolithic MOSFET + Schottky integration Eliminates discrete diode placement, reduces layout parasitics, and cuts BOM count by one component.
Low Qrr / Qg ratio Qrr = 4.3 nC, Qg = 31.6 nC → ratio = 0.136 - suppresses cross-conduction in synchronous rectification.
100% UIS rated Withstands 43 mJ single-pulse avalanche energy (EAS) - ensures robustness against inductive load transients.
Thermally optimized package RθJA = 58 °C/W (1-in² copper) enables 12 A operation without forced air cooling in space-constrained modules.
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, HTRB, and UHAST - suitable for under-hood DC-DC converters.

Applications

Automotive LED Headlamp Driver Industrial 24 V Input Buck Converter

Use Scenario: High-current constant-current driver for adaptive front lighting systems requiring PWM dimming above 1 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in buck controller stage, handling 8–10 A peak load with minimal thermal rise.

Use Value: Integrated Schottky reduces VSD-related conduction loss by 0.35 V vs. body diode, improving efficiency by 1.8% at 8 A.

Use Scenario: Primary power switch in isolated industrial DC-DC module converting 24 V input to 5 V/10 A output.

IC Role / Device Role / Timing Role: High-side switch operating at 300–500 kHz with 100% duty-cycle capability during startup surge.

Use Value: 100% UIS rating absorbs 17 A inductive kickback from transformer leakage, preventing catastrophic failure.

USB-C PD Power Delivery Module Server VRM High-Density Point-of-Load

Use Scenario: Secondary-side synchronous rectifier in 20–100 W USB-C PD adapter with GaN primary controller.

IC Role / Device Role / Timing Role: Low-VDS freewheeling path during dead time, minimizing reverse recovery noise.

Use Value: trr = 13.1 ns and Qrr = 4.3 nC reduce EMI generation and eliminate need for snubber networks.

Use Scenario: Compact 3-phase interleaved VRM supplying 1.2 V/60 A to AI accelerator cards in data centers.

IC Role / Device Role / Timing Role: Phase-leg low-side switch with parallel-source configuration for current sharing.

Use Value: 3333-8 footprint allows 3× devices per cm², achieving >85 A/in² current density without thermal derating.

Availability

DMS3012SFG-13 is available at Aetrix Electronics and suitable for automotive LED drivers, industrial 24 V buck converters, and USB-C PD power delivery modules requiring stable component supply across extended product lifecycles.

Supply support for DMS3012SFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

The DMS3012SFG belongs to Diodes' DIOFET family - engineered specifically to replace discrete MOSFET + Schottky combinations in high-frequency, high-density power conversion applications where thermal and layout constraints dominate.

FAQ

What is the maximum junction temperature for DMS3012SFG-13?

The device is rated for TJ = –55°C to +150°C. With RθJA = 58 °C/W on a 1-inch square copper pad and 2.2 W power dissipation, maximum ambient temperature is +112°C before reaching 150°C junction limit - verified per JEDEC JESD51-2 thermal test conditions.

Is DMS3012SFG-13 pin-compatible with standard SO-8 MOSFETs?

No - it uses the PowerDI3333-8 package (3.3 × 3.3 mm), which has different pin spacing, thermal pad layout, and terminal assignment than SO-8 (4.9 × 6.0 mm). The pinout is non-interchangeable: all sources are on pins 1–4, all drains on pins 5–8, and gate is a center pad not aligned with SO-8 pin 1.

Does the integrated Schottky diode conduct during normal MOSFET turn-off?

Yes - the Schottky conducts during the dead-time interval when both high-side and low-side switches are off. Its forward voltage (VSD = 0.45 V @ 1 A) is significantly lower than the MOSFET's body diode (~1.2 V), reducing freewheeling loss and improving light-load efficiency.

Can DMS3012SFG-13 be used in linear regulator applications?

No - it is optimized for switching operation only. Its RDS(ON) variation over temperature (±30% from –55°C to +150°C) and lack of Safe Operating Area (SOA) characterization beyond pulsed conditions make it unsuitable for linear pass-element use.

DMS3012SFG-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
10mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
14.7 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4310 pF @ 15 V
FET Feature:
Schottky Diode (Body)
Power Dissipation (Max):
890mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
POWERDI3333-8

DMS3012SFG-13 FAQ

1.How can I place an order for DMS3012SFG-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMS3012SFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMS3012SFG-13 reliable?

The price and inventory of DMS3012SFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMS3012SFG-13 is usually 5 days.

3.What payment methods are accepted for DMS3012SFG-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMS3012SFG-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMS3012SFG-13?

DMS3012SFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMS3012SFG-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMS3012SFG-13?

For technical support, including DMS3012SFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMS3012SFG-13 requirements.

6.How does Aetrix verify that DMS3012SFG-13 is sourced from the original manufacturer or authorized distributors?

All DMS3012SFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMS3012SFG-13 meets industry standards.

7.What is the process for return or replacement of DMS3012SFG-13?

All DMS3012SFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMS3012SFG-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMS3012SFG-13 part is unused and in its original packaging.

Return procedure for DMS3012SFG-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMS3012SFG-13 Tags

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