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Diodes Incorporated DMS3012SFG-7
- Part No.:
- DMS3012SFG-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMS3012SFG-7.pdf
- Description:
- MOSFET N-CH 30V 12A POWERDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:2,864
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Product details
Overview
DMS3012SFG-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET monolithically integrated with a Schottky diode in a single PowerDI3333-8 die, delivering 7.3 mΩ RDS(ON) at VGS = 10V, 12 A continuous drain current, and 0.45 V forward diode voltage (VSD). It serves as a high-efficiency synchronous rectifier or power switch in DC-DC converters.
For engineers reviewing the DMS3012SFG-7 datasheet, DMS3012SFG-7 pinout, DMS3012SFG-7 application, or DMS3012SFG-7 equivalent, key selection criteria include its low Qrr (4.3 nC), 100% UIS-rated avalanche capability, integrated Schottky's reduced body-diode conduction loss, and thermally optimized PowerDI3333-8 package for high-density power stages.
Technical Context
This device implements Diodes Incorporated's patented DIOFET process to co-integrate an N-channel MOSFET and Schottky diode on one silicon die-eliminating parasitic body diode conduction and enabling fast, low-loss reverse recovery (trr = 13.1 ns, Qrr = 4.3 nC). Its gate threshold voltage (VGS(TH) = 1.0–2.5 V) supports 3.3 V and 5 V logic-level drive.
The PowerDI3333-8 package provides 11 °C/W junction-to-case thermal resistance and occupies only 33% of the board area of an SO-8, with a 0.072 g mass and UL 94V-0 molding compound. It is qualified to AEC-Q101 and rated for operation from –55 °C to +150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage before avalanche breakdown; suitable for 24 V rail and 12 V automotive input systems. |
| RDS(ON) | 7.3 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 12 A, critical for high-efficiency buck converter output stages. |
| ID (continuous) | 12 A @ TA = +25 °C - Sustains full-load current in compact DC-DC modules without forced airflow. |
| VSD | 0.45 V @ IS = 1 A - Reduces forward drop vs. standard body diode (~1.2 V), cutting synchronous rectifier losses by >60%. |
| Qrr | 4.3 nC - Low reverse recovery charge minimizes switching loss and EMI during hard commutation in synchronous buck topologies. |
| RθJA | 58 °C/W (with 1″² copper) - Enables 2.2 W steady-state dissipation at +70 °C ambient, supporting high-power density designs. |
| tr/tf | 27.8 ns / 13.6 ns - Fast switching transitions reduce dead-time losses and improve light-load efficiency in PWM controllers. |
Pinout & Package
Package: PowerDI3333-8 - surface-mount, thermally enhanced 8-pin leadframe package with exposed drain paddle; 3.30 mm × 3.30 mm footprint, 0.80 mm height, UL 94V-0 green molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Common source connection for all three internal MOSFET cells; electrically tied to cathode of integrated Schottky. |
| 5, 6, 7, 8 | Drain | Common drain connection for MOSFET and anode of integrated Schottky; also serves as thermal pad for heat dissipation. |
| Center Pad (exposed) | Drain (thermal) | Primary thermal path to PCB; must be soldered to large copper pour for RθJA = 58 °C/W performance. |
| Pin 5 (top view label) | Gate | Single gate input controlling all MOSFET cells; low Rg (0.26–2.6 Ω) enables clean 10 MHz+ switching with minimal gate drive loss. |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic MOSFET + Schottky integration | Eliminates external Schottky placement and layout parasitics; reduces BOM count and PCB area by >60% vs. discrete solutions. |
| Low Qrr and fast trr | 4.3 nC Qrr and 13.1 ns trr cut reverse-recovery energy loss by >85% versus standard MOSFET body diodes in synchronous rectification. |
| Thermally optimized PowerDI3333-8 | 11 °C/W RθJC and 33% smaller footprint than SO-8 enable higher power density in space-constrained DC-DC modules. |
| 100% UIS avalanche rated | Withstands 43 mJ single-pulse avalanche energy (EAS) without degradation-critical for inductive load switching reliability. |
| AEC-Q101 qualified | Validated for automotive-grade temperature cycling, humidity, and mechanical stress-supports under-hood and infotainment power rails. |
Applications
| Automotive Infotainment Power Supply | LCD Backlight Boost Converter |
|---|---|
|
Use Scenario: 12 V input to 24 V boost stage powering LED backlight in automotive center display. IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing external Schottky; operates at 500 kHz PWM frequency with zero-voltage switching assist. Use Value: VSD = 0.45 V cuts conduction loss by 62% vs. 1.2 V body diode, raising boost efficiency from 87% to 92.5% at 1.5 A load. |
Use Scenario: High-side switch in portable tablet LCD boost converter with 3.3 V input and 18 V output. IC Role / Device Role / Timing Role: Main power switch controlling inductor current; driven by PWM controller with 10 ns rise/fall edge timing. Use Value: RDS(ON) = 7.3 mΩ limits I²R loss to 0.17 W at 10 A peak, enabling 94% efficiency and eliminating need for heatsink. |
| Industrial 24 V DC-DC POL Module | USB-C PD Sink Protection Switch |
|
Use Scenario: Point-of-load buck converter supplying 5 V/6 A to FPGA core logic in factory automation controller. IC Role / Device Role / Timing Role: Low-side synchronous rectifier; commutates with 100 ns dead time to prevent shoot-through. Use Value: Qg = 31.6 nC at VGS = 10 V ensures clean turn-on with 1 Ω gate resistor, reducing gate drive loss to <15 mW. |
Use Scenario: Input protection switch between USB-C receptacle and system PMIC, handling up to 3 A continuous current. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch; leverages integrated Schottky for fault-current clamping. Use Value: 100% UIS rating (17 A IAS, 43 mJ EAS) withstands 500 ms short-circuit events without failure per USB-C spec. |
Availability
DMS3012SFG-7 is available at Aetrix Electronics and suitable for automotive infotainment power supplies, LCD backlight boost converters, and industrial point-of-load DC-DC modules requiring stable component supply and AEC-Q101 compliance.
Supply support for DMS3012SFG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection devices for automotive, industrial, and consumer markets.
DMS3012SFG belongs to the DIOFET product line-engineered to replace discrete MOSFET + Schottky combinations with monolithic, thermally optimized power switches for high-frequency DC-DC conversion.
FAQ
What is the maximum junction temperature and thermal derating behavior of DMS3012SFG-7?
The device is rated for TJ = –55 °C to +150 °C. With a 1″² copper pad, RθJA = 58 °C/W allows 2.2 W dissipation at +25 °C ambient, dropping to 1.3 W at +70 °C. Derating follows linear 16.7 mW/°C slope above +70 °C ambient per datasheet Note 6.
Does DMS3012SFG-7 require a gate resistor, and what value is recommended?
Yes-a gate resistor is required to control dV/dt and suppress ringing. For 500 kHz operation with 10 V drive, a 1.0 Ω resistor balances switching speed (tr/tf ≈ 25 ns) and gate drive loss (<15 mW), per typical gate charge curve (Fig. 14) and Rg = 0.26–2.6 Ω specification.
How does the integrated Schottky diode differ from the MOSFET's intrinsic body diode in operation?
The monolithic Schottky replaces the parasitic body diode entirely: it conducts during freewheeling with VSD = 0.45 V (vs. ~1.2 V), exhibits no minority-carrier storage, and delivers Qrr = 4.3 nC (vs. >50 nC for body diode), eliminating reverse-recovery spikes and associated EMI in synchronous rectifiers.
Is DMS3012SFG-7 suitable for new designs despite the "NOT RECOMMENDED FOR NEW DESIGN" note?
No-the datasheet explicitly states "NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART". This reflects Diodes Incorporated's end-of-life status; Aetrix Electronics stocks remaining inventory for legacy repair and continuity, but advises migration to active alternatives like DMN3016LSD-13 or DMP3018LPS-13 for new projects.
DMS3012SFG-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4310 pF @ 15 V
- FET Feature:
- Schottky Diode (Body)
- Power Dissipation (Max):
- 890mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMS3012SFG-7 FAQ
1.How can I place an order for DMS3012SFG-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMS3012SFG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMS3012SFG-7 reliable?
The price and inventory of DMS3012SFG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMS3012SFG-7 is usually 5 days.
3.What payment methods are accepted for DMS3012SFG-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMS3012SFG-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMS3012SFG-7?
DMS3012SFG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMS3012SFG-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMS3012SFG-7?
For technical support, including DMS3012SFG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMS3012SFG-7 requirements.
6.How does Aetrix verify that DMS3012SFG-7 is sourced from the original manufacturer or authorized distributors?
All DMS3012SFG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMS3012SFG-7 meets industry standards.
7.What is the process for return or replacement of DMS3012SFG-7?
All DMS3012SFG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMS3012SFG-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMS3012SFG-7 part is unused and in its original packaging.
Return procedure for DMS3012SFG-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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