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Diodes Incorporated DMS3014SFG-13

Part No.:
DMS3014SFG-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMS3014SFG-13.pdf
Description:
MOSFET N-CH POWERDI3333-8
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,785

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Product details

Overview

DMS3014SFG-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET with integrated Schottky diode in PowerDI3333-8 package, featuring 13 mΩ RDS(ON) @ VGS = 10 V, 9.5 A continuous drain current at TA = +25°C, and 100% UIS avalanche rating-designed for high-efficiency DC-DC converters and backlighting power stages.

For engineers reviewing the DMS3014SFG-13 datasheet, DMS3014SFG-13 pinout, DMS3014SFG-13 application, or DMS3014SFG-13 equivalent, key selection criteria include its monolithic DIOFET architecture (MOSFET + Schottky), low QRR (8.0 nC), 100% Rg tested gate resistance (0.26–2.34 Ω), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This device implements Diodes Incorporated's patented DIOFET process to co-integrate an N-channel MOSFET and a Schottky diode on a single die, enabling simultaneous optimization of conduction loss (via 13 mΩ RDS(ON)) and body-diode switching loss (via 12.9 ns tRR and 8.0 nC QRR). Its gate charge profile (Qg = 45.7 nC @ 10 V) and low Ciss (2296–4310 pF) support high-frequency synchronous rectification.

The PowerDI3333-8 package delivers 7.1 °C/W RθJC, enabling 2.1 W steady-state power dissipation on 1-inch² copper, while its 33% board area reduction versus SO-8 supports compact DC-DC designs. Thermal derating follows RθJA = 63 °C/W (with heatsink) and 131 °C/W (standard FR-4).

Key Specifications

ParameterValue and Actual Design Meaning
VDSS30 V - maximum blocking voltage for 12 V input rail DC-DC stages
RDS(ON)13 mΩ @ VGS = 10 V - enables <130 mW conduction loss at 10 A
ID (continuous)9.5 A @ TA = +25°C - supports >10 W output in buck converters
QRR8.0 nC - reduces body-diode recovery loss in hard-switched topologies
tRR12.9 ns - minimizes dead-time-induced shoot-through risk in synchronous FETs
Rg0.26–2.34 Ω - tightly controlled gate resistance ensures consistent turn-on timing
VSD0.4–0.55 V - low forward drop of integrated Schottky improves light-load efficiency

Pinout & Package

Package: PowerDI3333-8, thermally enhanced 8-pin surface-mount package with exposed drain paddle; dimensions 3.30 × 3.30 × 0.80 mm; UL 94V-0 molding compound; matte tin annealed terminals.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 5, 6, 7, 8Drain (D)Common high-current output node; pins 1/2/3/5/6/7/8 are internally paralleled to the exposed thermal pad for low-inductance, high-current path and thermal conduction
4Gate (G)Control terminal; requires ≤±12 V drive; low Ciss enables fast switching with minimal gate driver power
Source (S)Source (S)Internally connected to pins 1–3 and 5–8 via substrate; external S connection not available-source is referenced to PCB ground plane through package mounting

Key Features

FeatureDesign Value
Monolithic DIOFET integrationSingle-die MOSFET + Schottky eliminates discrete layout parasitics and ensures matched thermal behavior
100% UIS avalanche ratedWithstands 30 A repetitive avalanche current (L = 0.1 mH), enabling robust operation under inductive load transients
100% Rg testedGuarantees gate resistance between 0.26 Ω and 2.34 Ω-critical for predictable gate drive timing in high-frequency converters
AEC-Q101 qualifiedValidated for automotive temperature range (−55°C to +150°C) and mechanical stress, supporting infotainment and ADAS power supplies
Green, halogen-free constructionMeets RoHS 3 and JEDEC J-STD-020 moisture sensitivity Level 1-enables lead-free reflow without popcorn effect

Applications

LED Backlight DriverPoint-of-Load DC-DC Converter

Use Scenario: Driving white LED strings in automotive center-stack displays using boost topology with synchronous rectification.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500 kHz–1 MHz, replacing external Schottky to reduce BOM count and improve efficiency.

Use Value: Integrated Schottky lowers VSD to 0.4 V, reducing conduction loss by ~35% vs. discrete MOSFET+Schottky solutions at 2 A load.

Use Scenario: Output stage of 5 V → 3.3 V buck converter powering FPGA I/O banks in industrial PLC modules.

IC Role / Device Role / Timing Role: Low-side synchronous FET with tight gate charge matching (Qgd/Qgs = 0.58) to minimize cross-conduction during 1 MHz switching.

Use Value: 13 mΩ RDS(ON) limits I²R loss to 117 mW at 3 A, enabling >94% efficiency at full load without forced air cooling.

Automotive USB-C PD Power PathPortable Device Battery Protection

Use Scenario: Input power path switch in automotive USB-C PD sink, handling up to 20 V/3 A with reverse polarity and overvoltage protection.

IC Role / Device Role / Timing Role: Hot-swap FET with fast turn-off (tF = 6.6 ns) and 100% avalanche rating to survive load dump transients.

Use Value: 30 V VDSS and 30 A IAR withstand ISO 7637-2 Pulse 5a (120 V/100 ms), eliminating need for external TVS clamping.

Use Scenario: Charge/discharge path switch in Bluetooth earbud battery management, placed between Li-ion cell and system load.

IC Role / Device Role / Timing Role: Load switch with ultra-low leakage (IDSS ≤ 100 μA) and low VGS(TH) (1.0–2.2 V) enabling direct control from 1.8 V GPIO.

Use Value: 0.072 g weight and 3.3 × 3.3 mm footprint allow placement within 2 mm of battery connector-reducing trace inductance and improving short-circuit response.

Availability

DMS3014SFG-13 is available at Aetrix Electronics and suitable for LED backlight drivers, point-of-load DC-DC converters, and automotive USB-C PD power path applications requiring stable component supply and long-term lifecycle continuity.

Supply support for DMS3014SFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMS3014SFG belongs to Diodes' DIOFET product line-engineered specifically to replace discrete MOSFET + Schottky combinations in space-constrained, high-efficiency power conversion systems where thermal performance and layout simplicity are critical.

FAQ

Is DMS3014SFG-13 pin-compatible with standard SO-8 MOSFETs?

No. DMS3014SFG-13 uses the PowerDI3333-8 package with 8 pins arranged in a 3.3 mm × 3.3 mm outline and an exposed drain paddle. It has no direct SO-8 pin mapping-pin 4 is Gate, and pins 1–3/5–8 are all Drain-connected to the thermal pad. Layout requires dedicated land pattern per Diodes' recommended pad layout.

What does "NOT RECOMMENDED FOR NEW DESIGN" mean for DMS3014SFG-13?

This designation indicates Diodes Incorporated no longer recommends DMS3014SFG-13 for new product designs due to newer-generation alternatives with improved RDS(ON), lower Qg, or enhanced thermal performance. However, it remains fully supported for existing production, with guaranteed supply and unchanged specifications per DS35594 Rev. 7–3.

Can DMS3014SFG-13 be used in linear mode (e.g., as a pass element)?

No. Its Safe Operating Area (SOA) curve (Fig. 1) shows limited DC capability: at VDS = 10 V, maximum DC current is ~1.5 A. The device is optimized for switching operation-not linear regulation-due to thermal limitations and lack of SOA derating data beyond 100 µs pulses.

Does the integrated Schottky diode share the same thermal path as the MOSFET junction?

Yes. The Schottky diode is monolithically integrated on the same silicon die as the MOSFET, sharing identical junction-to-case thermal resistance (RθJC = 7.1 °C/W). This ensures matched thermal tracking and eliminates thermal runaway risk between active and body-diode conduction modes.

DMS3014SFG-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
13mOhm @ 10.4A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
45.7 nC @ 10 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
4310 pF @ 15 V
FET Feature:
Schottky Diode (Body)
Power Dissipation (Max):
1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
POWERDI3333-8

DMS3014SFG-13 FAQ

1.How can I place an order for DMS3014SFG-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMS3014SFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMS3014SFG-13 reliable?

The price and inventory of DMS3014SFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMS3014SFG-13 is usually 5 days.

3.What payment methods are accepted for DMS3014SFG-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMS3014SFG-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMS3014SFG-13?

DMS3014SFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMS3014SFG-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMS3014SFG-13?

For technical support, including DMS3014SFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMS3014SFG-13 requirements.

6.How does Aetrix verify that DMS3014SFG-13 is sourced from the original manufacturer or authorized distributors?

All DMS3014SFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMS3014SFG-13 meets industry standards.

7.What is the process for return or replacement of DMS3014SFG-13?

All DMS3014SFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMS3014SFG-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMS3014SFG-13 part is unused and in its original packaging.

Return procedure for DMS3014SFG-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMS3014SFG-13 Tags

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