Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMS3016SFG-7

Part No.:
DMS3016SFG-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMS3016SFG-7.pdf
Description:
MOSFET N-CH 30V 7A POWERDI3333-8
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,475

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMS3016SFG from Diodes Incorporated is an N-channel enhancement-mode MOSFET monolithically integrated with a Schottky diode in a single PowerDI3333-8 die, delivering 30V VDSS, 13mΩ RDS(ON) @ 10VGS, and 10.2A ID at TA = +25°C. It serves as a high-efficiency synchronous rectifier or power switch in compact DC-DC converters.

For engineers reviewing the DMS3016SFG datasheet, DMS3016SFG pinout, DMS3016SFG application, or DMS3016SFG equivalent, key selection criteria include its low 0.37V typical VSD, 128pF Crss, 44.6nC total gate charge at 10VGS, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This DIOFET device integrates a trench MOSFET and Schottky diode on one silicon die to eliminate body diode conduction losses and reduce reverse recovery charge (Qrr). Its low 3.42°C/W RθJC enables high-power-density thermal management in space-constrained layouts.

The device features a 1.0–2.2V gate threshold voltage, 1886pF Ciss, and avalanche-rated operation (IAR = 13A, EAR = 24mJ), supporting robust switching in buck converters and load switches where shoot-through immunity and fast turn-off are critical.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30V - Maximum drain-source blocking voltage for 12V input rail applications with margin.
RDS(ON) 13mΩ @ 10VGS - Enables ≤1.3W conduction loss at 10A, critical for >95% efficiency in point-of-load converters.
ID (max) 10.2A @ 25°C - Sustains continuous output current in 5–12V DC-DC stages without derating on 2oz copper PCBs with thermal vias.
VSD 0.37V typ @ 1A - Reduces forward drop vs. standard body diode (typically >0.8V), cutting freewheeling losses by >50%.
Qg 44.6nC @ 10VGS - Matches gate driver capability for <50ns turn-on delay and controlled dV/dt in 500kHz–1MHz switching.
Crss 128pF - Limits Miller effect, enabling stable operation with moderate gate resistance (Rg = 2Ω) at high frequencies.
TJ range −55°C to +150°C - Supports under-hood automotive environments and industrial temperature cycling without parameter drift.

Pinout & Package

Package: PowerDI3333-8 - thermally enhanced 3.3mm × 3.3mm surface-mount package with exposed drain pad, occupying only 33% board area of SO-8 and rated for 2.08W dissipation on optimized 2oz copper PCBs.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4 Drain (D) Four parallel drain terminals connected to internal die backside and exposed thermal pad - primary heat path to PCB.
5 Source (S) Source terminal tied to source metallization; used for current return and gate drive reference in low-side configurations.
6 Gate (G) Control terminal requiring 1.0–2.2V threshold; low 2Ω gate resistance supports fast switching with minimal overshoot.
7, 8 Source (S) Additional source terminals reducing source inductance and improving current sharing in high-di/dt applications.

Key Features

Feature Design Value
Monolithic DIOFET integration Single-die MOSFET + Schottky eliminates discrete co-packaging, reduces layout parasitics, and guarantees matched thermal behavior.
Low Qrr Schottky Zero reverse recovery charge eliminates switching spikes and EMI during diode commutation in synchronous rectification.
Avalanche ruggedness Rated for 13A IAR and 24mJ EAR - withstands inductive kickback in motor drivers and unregulated input transients.
Thermal efficiency RθJC = 3.42°C/W enables 10.2A operation at 150°C junction without external heatsink on 1-inch² copper plate.
AEC-Q101 qualification Validated for automotive powertrain and body electronics per stress test requirements including HTGB, HTRB, and UHAST.

Applications

Automotive DC-DC Converter Industrial Point-of-Load Regulator

Use Scenario: 12V-to-5V/3.3V conversion in ADAS camera modules with strict size and thermal constraints.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 2MHz with forced PWM mode.

Use Value: 0.37V VSD cuts freewheeling loss by 55% vs. discrete MOSFET+Schottky solution, enabling 10mm² footprint reduction.

Use Scenario: 24V-to-12V step-down supply for PLC I/O modules in factory automation cabinets.

IC Role / Device Role / Timing Role: High-current low-side switch controlling 8A load with 100µs overcurrent response.

Use Value: 13mΩ RDS(ON) limits conduction loss to 1.0W at full load, eliminating need for airflow-dependent cooling.

USB-C Power Delivery Sink Telecom Hot-Swap Controller

Use Scenario: 20V input path switch in portable USB-C PD adapters with bidirectional current sensing.

IC Role / Device Role / Timing Role: Input protection FET with integrated Schottky for reverse polarity and inrush control.

Use Value: Low 128pF Crss ensures clean gate drive timing across 0–20V input range, preventing shoot-through during plug insertion.

Use Scenario: 48V hot-swap circuit in telecom line cards requiring fault current limiting and soft-start.

IC Role / Device Role / Timing Role: Main pass element with avalanche rating to absorb 48V line transients up to 100V.

Use Value: 24mJ EAR rating sustains 10ms 60V surge without failure, meeting GR-1089 Class B lightning immunity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET-with-integrated-Schottky applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN3016LSD-13 Same die, identical RDS(ON) and VSD, but in leaded SO-8 package with higher RθJA (65°C/W). Requires larger PCB area and cannot achieve same power density; unsuitable for ultra-thin consumer designs. Select only when legacy SO-8 footprint compatibility is mandatory and thermal headroom exceeds 30°C.
SI7157DP-T1-GE3 30V, 11.5mΩ @ 10VGS, but no integrated Schottky; uses standard body diode with 1.2V VSD. Lacks low-VSD benefit - increases freewheeling loss by 2.3× and requires snubber design in high-frequency converters. Choose only if Schottky integration is unnecessary and lower RDS(ON) outweighs body diode limitations.

Compared with DMN3016LSD-13 and SI7157DP-T1-GE3, DMS3016SFG uniquely combines PowerDI3333-8's 3.3mm² footprint, monolithic Schottky, and AEC-Q101 rating - making it the sole option for space-constrained automotive and industrial DC-DC where both thermal density and body-diode loss elimination are required.

Availability

DMS3016SFG is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial point-of-load regulators, and USB-C power delivery systems requiring stable component supply and long-term lifecycle assurance.

Supply support for DMS3016SFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management solutions for automotive, industrial, and computing markets.

This part belongs to Diodes' DIOFET product line, engineered specifically to replace discrete MOSFET + Schottky combinations in high-frequency, high-density power conversion - prioritizing conduction loss reduction and thermal efficiency.

FAQ

Is DMS3016SFG pin-compatible with standard SO-8 MOSFETs?

No. DMS3016SFG uses the PowerDI3333-8 package with eight terminals arranged as four drains (pins 1–4), two sources (pins 5, 7–8), and one gate (pin 6). Its pinout differs fundamentally from SO-8's dual-source/dual-drain layout, requiring dedicated PCB layout and thermal pad design per Diodes' recommended footprint.

What is the maximum continuous drain current at 100°C ambient?

At TA = +100°C, the device supports 6.4A continuous drain current with VGS = 4.5V and 5.5A with VGS = 10V, based on thermal derating curves in DS35434 Rev. 8–3. This assumes mounting on FR-4 with 2oz copper, thermal vias, and 1-inch² copper plane per Diodes' test condition Note 6.

Does the integrated Schottky diode conduct in reverse bias?

No. The integrated Schottky conducts only from source to drain (forward direction) when VGS = 0V and current flows from source to drain - acting as the freewheeling path in buck converters. It does not conduct in reverse-biased drain-to-source conditions, maintaining full 30V blocking capability.

Can DMS3016SFG be used in linear regulator applications?

No. Its Safe Operating Area (SOA) is optimized for switching operation, not linear mode. At VDS = 5V and ID = 2A, power dissipation exceeds 10W - far beyond its 2.08W maximum rated power on optimized PCBs. Linear use risks immediate thermal runaway due to positive temperature coefficient of RDS(ON).

DMS3016SFG-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
13mOhm @ 11.2A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
44.6 nC @ 10 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
1886 pF @ 15 V
FET Feature:
Schottky Diode (Body)
Power Dissipation (Max):
980mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
POWERDI3333-8

DMS3016SFG-7 FAQ

1.How can I place an order for DMS3016SFG-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMS3016SFG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMS3016SFG-7 reliable?

The price and inventory of DMS3016SFG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMS3016SFG-7 is usually 5 days.

3.What payment methods are accepted for DMS3016SFG-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMS3016SFG-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMS3016SFG-7?

DMS3016SFG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMS3016SFG-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMS3016SFG-7?

For technical support, including DMS3016SFG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMS3016SFG-7 requirements.

6.How does Aetrix verify that DMS3016SFG-7 is sourced from the original manufacturer or authorized distributors?

All DMS3016SFG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMS3016SFG-7 meets industry standards.

7.What is the process for return or replacement of DMS3016SFG-7?

All DMS3016SFG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMS3016SFG-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMS3016SFG-7 part is unused and in its original packaging.

Return procedure for DMS3016SFG-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMS3016SFG-7 Tags

  • DMS3016SFG-7
  • DMS3016SFG-7 PDF
  • DMS3016SFG-7 Datasheet
  • DMS3016SFG-7 Specifications
  • DMS3016SFG-7 Images
  • Diodes Incorporated
  • Diodes Incorporated DMS3016SFG-7
  • Buy DMS3016SFG-7
  • DMS3016SFG-7 Price
  • DMS3016SFG-7 Distributor
  • DMS3016SFG-7 Supplier
  • DMS3016SFG-7 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER