Diodes Incorporated DMS3016SSS-13

Overview

DMS3016SSS-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET monolithically integrated with a Schottky diode in a single SO-8 die, delivering 30 V V_DSS, 9.8 A I_D (at V_GS = 4.5 V), 11 mΩ R_DS(ON) (at V_GS = 4.5 V), and 0.4 V V_SD. It serves as a high-efficiency synchronous rectifier or power switch in DC-DC converters for automotive body electronics and industrial power supplies.

For engineers reviewing the DMS3016SSS-13 datasheet, DMS3016SSS-13 pinout, DMS3016SSS-13 application, or DMS3016SSS-13 equivalent, key selection criteria include its low Q_rr (reducing body-diode switching loss), avalanche-rated I_AR = 13 A, and AEC-Q101 qualification for automotive-grade reliability under thermal cycling and humidity stress.

Technical Context

This DIOFET device integrates a trench MOSFET and Schottky diode on one silicon die, eliminating parasitic inductance between discrete components and enabling faster reverse recovery than conventional body diodes. Its gate threshold voltage (1.0–2.3 V) supports direct drive from 3.3 V logic controllers without level shifting.

The SO-8 package provides dual-source/drain terminals per side to support paralleled current paths and reduce PCB trace resistance. Thermal resistance R_θJA = 81 °C/W is specified for minimum recommended layout-critical for sustained 6.3 A operation at +85 °C ambient.

Key Specifications

Pinout & Package

Package: SO-8 surface-mount plastic package with exposed drain pad for enhanced thermal dissipation; UL 94V-0 rated molding compound; moisture sensitivity level 1.

Key Features

Applications

Availability

DMS3016SSS-13 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC conversion, and smart actuator control requiring stable component supply and AEC-Q101-compliant sourcing.

Supply support for DMS3016SSS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

The DMS3016SSS belongs to Diodes' DIOFET product line, engineered specifically to replace discrete MOSFET + Schottky combinations in space-constrained, thermally demanding power stages where board area and EMI reduction are critical.

FAQ

What is the maximum continuous drain current at 100°C ambient?

At T_A = +100 °C, the maximum continuous drain current is derated to approximately 4.8 A, based on the 1.54 W power dissipation limit and R_θJA = 81 °C/W. This assumes use of the minimum recommended PCB copper area per Diodes' layout guidelines.

Can DMS3016SSS-13 be used in a high-side configuration with 12 V gate drive?

Yes - its ±12 V V_GSS rating and 2.3 V max V_GS(TH) allow robust high-side operation using bootstrap gate drive. However, the integrated Schottky's anode is tied to source, so it only clamps source-to-drain - not gate-to-source - during transients.

Is the SO-8 package lead-free and RoHS 3 compliant?

Yes - DMS3016SSS-13 is fully lead-free and complies with EU Directive 2015/863/EU (RoHS 3), containing <900 ppm bromine, <900 ppm chlorine, and <1000 ppm antimony compounds, as certified by Diodes Incorporated's Green material declaration.

Why is this part marked "Not Recommended for New Design"?

Diodes Incorporated issued this designation due to planned obsolescence; the device remains fully functional and supported for existing designs, but no new design-in is advised. No direct pin-compatible replacement has been announced, and migration paths require redesign evaluation for R_DS(ON), Q_g, and thermal performance.