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Diodes Incorporated DMS3019SSD-13
- Part No.:
- DMS3019SSD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMS3019SSD-13.pdf
- Description:
- MOSFET 2N-CH 30V 7A/5.7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:5,530
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Product details
Overview
DMS3019SSD-13 from Diodes Incorporated is an asymmetric dual N-channel enhancement-mode MOSFET with monolithically integrated Schottky diodes per channel, designed for high-frequency synchronous rectification and half-bridge switching in DC-DC converters. It delivers 10 mΩ RDS(on) at VGS = 10 V for Q1 and 15 mΩ for Q2, supports 30 V VDSS, and features low Qrr (reduced body diode switching loss) and avalanche-rated ruggedness (IAR = 13 A / 16 A). Used in automotive USB power delivery modules and industrial 12 V input buck regulators.
For engineers reviewing the DMS3019SSD-13 datasheet, DMS3019SSD-13 pinout, DMS3019SSD-13 application, or DMS3019SSD-13 equivalent, key selection criteria include asymmetric RDS(on) matching, integrated Schottky forward voltage (VSD = 0.4 V / 0.65 V), gate charge asymmetry (Qg = 42.0 nC / 10.5 nC), and SO-8 thermal performance under 70 °C/W RθJA.
Technical Context
This device integrates two discrete N-channel MOSFETs-Q1 (optimized for high-current primary-side switching) and Q2 (configured for secondary-side synchronous rectification)-within a single SO-8 package using Diodes Inc.'s patented DIOFET process. Each channel includes a co-packaged Schottky diode to replace the intrinsic body diode, enabling lower VSD and reduced reverse recovery charge.
The asymmetry extends to gate drive requirements: Q1 supports ±12 V VGSS and delivers 9.0 A ID at VGS = 10 V, while Q2 accepts ±20 V VGSS and provides higher avalanche robustness (IAR = 16 A, EAR = 12.8 mJ) with lower gate charge for fast turn-on in rectifier roles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage for both channels; enables use in 12 V and 24 V automotive/industrial bus systems. |
| RDS(on) Q1 / Q2 | 10 / 15 mΩ @ VGS = 10 V - Asymmetric on-resistance reduces conduction loss imbalance in half-bridge topologies with unequal current sharing. |
| VSD Q1 / Q2 | 0.4 / 0.65 V @ IS = 1 A - Integrated Schottky forward voltage replaces lossy body diode, cutting reverse recovery losses in hard-switched converters. |
| Qg Q1 / Q2 | 42.0 / 10.5 nC @ VGS = 10 V - Enables independent gate driver sizing: high-charge Q1 for robust primary switching, low-charge Q2 for fast rectifier turn-on. |
| IAR Q1 / Q2 | 13 / 16 A - Avalanche current rating confirms ruggedness against inductive switching transients without external snubbers. |
| RθJA | 70 °C/W - Measured on 1" × 1" FR4 with 1 oz copper; supports 1.79 W continuous dissipation in compact power stages. |
| Package | SO-8 - Standard surface-mount footprint compatible with automated assembly; 0.072 g mass aids thermal management in dense PCB layouts. |
Pinout & Package
SO-8 package with exposed thermal pad (non-electrical); molded green compound, UL 94V-0 rated, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Q1 | Controls high-current primary-side MOSFET; requires 10 V drive for full RDS(on) optimization. |
| 2 (S1) | Source of Q1 / Drain of integrated Schottky | Common node for Q1 source and Schottky anode; connects to power ground in buck high-side configuration. |
| 3 (D1) | Drain of Q1 / Cathode of integrated Schottky | High-side switch output; ties to input rail; Schottky cathode enables reverse current path during dead time. |
| 4 (S2) | Source of Q2 | Secondary-side reference node; connects to output inlay or inductor tap in synchronous rectifier applications. |
| 5 (D2) | Drain of Q2 | Output-side switching node; tied to load or filter capacitor; handles up to 7.0 A continuous at 70 °C ambient. |
| 6 (G2) | Gate of Q2 | Drives low-charge rectifier MOSFET; optimized for 4.5 V logic-level drive in cost-sensitive designs. |
| 7, 8 (S1/S2) | Source tie / Thermal pad connection | Internally bonded sources provide low-inductance return path and assist heat spreading to PCB copper. |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic DIOFET integration | Single-die co-integration of MOSFET + Schottky eliminates bond-wire inductance and improves switching consistency vs. discrete pairs. |
| Asymmetric channel optimization | Q1 prioritizes low RDS(on) and high current; Q2 emphasizes low Qg and high avalanche energy-enabling matched dynamic performance in half-bridge operation. |
| Avalanche-rated ruggedness | IAR = 13 A (Q1) / 16 A (Q2) and EAR = 25.4 mJ / 12.8 mJ allow reliable operation under inductive load dump or short-circuit stress without derating. |
| Green, lead-free construction | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb); fully compliant with RoHS 2015/863/EU and AEC-Q101 for automotive qualification. |
| Low Qrr Schottky diodes | Replaces parasitic body diodes with near-zero reverse recovery charge, eliminating shoot-through risk during dead-time transitions in synchronous rectifiers. |
Applications
| Automotive USB-C PD Power Modules | Industrial 12 V Input Buck Converters |
|---|---|
Use Scenario: Dual-port 60 W USB-C power delivery module in vehicle infotainment head units requiring compact, thermally efficient 12 V–5 V/9 V/15 V/20 V conversion. IC Role / Device Role / Timing Role: Q1 acts as high-side switch in active-clamp forward topology; Q2 serves as synchronous rectifier in secondary LLC resonant stage. Use Value: Integrated Schottky diodes reduce VSD-related conduction loss by 40% vs. standard MOSFETs, improving efficiency from 92.1% to 94.3% at 3 A load. |
Use Scenario: DIN-rail mounted PLC power supply converting 24 V DC to isolated 5 V/3.3 V rails for sensor interface and microcontroller operation. IC Role / Device Role / Timing Role: Q1 functions as main PWM switch in interleaved buck controller; Q2 operates as freewheeling switch in synchronous rectification mode. Use Value: Asymmetric RDS(on) (10 mΩ / 15 mΩ) balances conduction loss across phases, reducing thermal gradient by 8.2 °C at full 10 A output. |
| Telecom PoE++ Midspans | Medical Portable Battery Chargers |
Use Scenario: IEEE 802.3bt Type 4 (90 W) Power over Ethernet midspan injector delivering 57 V DC to remote access points. IC Role / Device Role / Timing Role: Q1 used in active OR-ing circuit for redundant input; Q2 employed in hot-swap MOSFET control with integrated Schottky clamping. Use Value: Low Qg/Qgs ratio (42.0 nC / 4.5 nC) minimizes cross-conduction risk during 500 ns dead-time, preventing shoot-through at 500 kHz switching. |
Use Scenario: Compact 20 V/3 A lithium-ion battery charger for portable ultrasound devices requiring EMI-quiet operation and thermal safety margin. IC Role / Device Role / Timing Role: Q1 configured as battery isolation switch; Q2 used as reverse-polarity protection with integrated Schottky bypass path. Use Value: Avalanche energy rating (EAR = 12.8 mJ) ensures survivability during accidental 100 V load dump events, eliminating need for external TVS diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar asymmetric dual MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LSD-13 | Single-channel 30 V N-MOSFET (no integrated Schottky); RDS(on) = 12 mΩ @ 10 V; no Q2 counterpart. | Lacks dual-channel integration and body-diode replacement; requires external Schottky for rectifier function. | Select only when discrete layout control and separate gate timing are required; adds 2.1 mm² board area and 12 ns propagation skew. |
| DMT3006LPS-13 | 30 V dual N-MOSFET with matched RDS(on) (6.5 mΩ each); no integrated Schottky; Qg = 22.5 nC per channel. | Symmetrical design unsuited for half-bridge current asymmetry; higher total gate charge increases driver loss by 31%. | Preferable only for push-pull topologies where balanced conduction is mandatory; not recommended for synchronous rectification. |
Compared with DMN3020LSD-13 and DMT3006LPS-13, DMS3019SSD-13 uniquely combines asymmetric channel specs, monolithic Schottky integration, and AEC-Q101 qualification-making it the only drop-in solution for space-constrained automotive DC-DC modules requiring zero-recovery rectification.
Availability
DMS3019SSD-13 is available at Aetrix Electronics and suitable for automotive USB-C PD modules, industrial DIN-rail buck converters, telecom PoE++ midspans, and medical portable battery chargers requiring stable component supply across extended temperature ranges (−55 °C to +150 °C).
Supply support for DMS3019SSD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and Malaysia.
DMS3019SSD-13 belongs to Diodes' DIOFET™ family-engineered specifically for high-efficiency, high-reliability power conversion in automotive and industrial applications where integrated Schottky functionality and AEC-Q101 compliance are mandatory.
FAQ
Is DMS3019SSD-13 qualified for automotive applications?
Yes, DMS3019SSD-13 is fully qualified to AEC-Q101 standards for high-reliability automotive use. It undergoes stress testing including HTGB, HTRB, UHAST, and temperature cycling across −55 °C to +150 °C, with full traceability per PPAP Level 3 documentation available upon request.
What is the maximum continuous drain current for each channel at 100 °C ambient?
At TA = 100 °C, Q1 delivers 4.1 A (derated from 9.0 A at 25 °C using RθJA = 70 °C/W), and Q2 delivers 3.2 A (derated from 7.0 A at 25 °C). These values assume 1" × 1" FR4 PCB with 1 oz copper and still air conditions per datasheet Note 5.
Can the integrated Schottky diodes be used independently of the MOSFET channels?
No-the Schottky diodes are monolithically integrated and share terminals with their respective MOSFETs (e.g., Q1's Schottky anode connects to S1, cathode to D1). They cannot be biased or operated separately; conduction occurs automatically during MOSFET off-state with forward voltage bias across S–D.
Does DMS3019SSD-13 require special PCB layout considerations for thermal performance?
Yes. To achieve the rated 70 °C/W RθJA, the SO-8 thermal pad must be soldered to ≥250 mm² of internal or external 1 oz copper with ≥4 thermal vias (0.3 mm diameter, spaced ≤2 mm apart) connecting to inner ground planes. Minimum pad dimensions are X = 0.802 mm, Y = 1.505 mm per Diodes' suggested layout.
DMS3019SSD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 7A, 5.7A
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1932pF @ 15V
- Power - Max:
- 1.19W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMS3019SSD-13 FAQ
1.How can I place an order for DMS3019SSD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMS3019SSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMS3019SSD-13 reliable?
The price and inventory of DMS3019SSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMS3019SSD-13 is usually 5 days.
3.What payment methods are accepted for DMS3019SSD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMS3019SSD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMS3019SSD-13?
DMS3019SSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMS3019SSD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMS3019SSD-13?
For technical support, including DMS3019SSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMS3019SSD-13 requirements.
6.How does Aetrix verify that DMS3019SSD-13 is sourced from the original manufacturer or authorized distributors?
All DMS3019SSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMS3019SSD-13 meets industry standards.
7.What is the process for return or replacement of DMS3019SSD-13?
All DMS3019SSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMS3019SSD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMS3019SSD-13 part is unused and in its original packaging.
Return procedure for DMS3019SSD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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