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Diodes Incorporated DMT10H009LCG-7
- Part No.:
- DMT10H009LCG-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT10H009LCG-7.pdf
- Description:
- MOSFET N-CH 100V 12.4A/47A 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:1,483
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Product details
Overview
DMT10H009LCG-7 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in V-DFN3333-8 (Type B) package, optimized for low RDS(ON) (7.2 mΩ typ @ VGS = 10V, 20A) and fast switching. It delivers 47A continuous drain current at TC = +25°C and supports notebook battery power management and high-efficiency load switching.
For engineers reviewing the DMT10H009LCG-7 datasheet, DMT10H009LCG-7 pinout, DMT10H009LCG-7 application, or DMT10H009LCG-7 equivalent, key selection criteria include its 100V VDSS, 8.8 mΩ max RDS(ON) @ 10V, 4.5V gate drive capability, 2309 pF Ciss, and AEC-Q101 readiness for automotive-grade power management designs.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low on-resistance while maintaining robust unclamped inductive switching (UIS) performance-rated for 21A avalanche current and 66 mJ energy with L = 0.3 mH. Its gate threshold voltage (1.1–2.5 V) enables compatibility with 3.3V and 5V logic-level drivers.
The device features low input capacitance (Ciss = 2309 pF), fast switching times (tD(ON) = 5.4 ns, tF = 14.9 ns), and integrated body diode with VSD = 0.8–1.2 V @ IS = 20A. Thermal resistance RθJC = 4.2 °C/W supports high-power density PCB layouts with copper thermal pads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100V drain-source blocking voltage, suitable for 48V industrial bus and notebook adapter inputs. |
| RDS(ON) max | 8.8 mΩ @ VGS = 10V, 20A - Minimizes conduction loss in high-current load switches and DC-DC high-side applications. |
| ID continuous | 47 A @ TC = +25°C - Supports high-current battery discharge paths without external heatsinking under controlled case temperature. |
| Ciss | 2309 pF @ VDS = 50V - Enables efficient gate drive design with moderate Qg = 40.2 nC (VGS = 10V), reducing driver power loss. |
| tF | 14.9 ns - Ensures rapid turn-off for high-frequency synchronous rectification and PWM-controlled power rails. |
| EAS | 66 mJ @ L = 0.3 mH - Provides margin against inductive kickback in motor control and solenoid drive circuits. |
| RθJC | 4.2 °C/W - Allows direct thermal coupling to PCB copper pour or heatsink for sustained 30W+ dissipation in compact footprints. |
Pinout & Package
Package: V-DFN3333-8 (Type B), 3.3 mm × 3.3 mm × 0.8 mm, exposed thermal pad, RoHS-compliant NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main current path output terminal | Connected to high-side switch node; ties directly to internal die drain metallization and bottom thermal pad for low-inductance, low-resistance conduction. |
| S (Source) | Current return path and reference node | Four parallel source terminals provide low-impedance return path and reduce layout parasitic inductance in high-di/dt applications. |
| G (Gate) | Control input for channel modulation | Single gate terminal with low RG = 1.9 Ω; designed for standard logic-level drivers without requiring gate boosters. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees ruggedness against inductive transients without derating-critical for hot-swap and battery disconnect circuits. |
| Low RDS(ON) @ 4.5V | 12.9 mΩ max enables full enhancement with 3.3V/5V microcontroller GPIOs, eliminating level-shifters in portable systems. |
| Green, halogen-free construction | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Meets IPC-1752A Class 2 and automotive OEM environmental compliance requirements. |
| Moisture sensitivity Level 1 | Zero bake requirement before reflow-reduces manufacturing cost and eliminates moisture-related popcorning risk. |
| Thermal resistance RθJC | 4.2 °C/W - Enables >30W power handling with minimal junction-to-case delta-T, supporting high-density power modules. |
Applications
| Notebook Battery Protection | USB-C Power Delivery Load Switch |
|---|---|
|
Use Scenario: Bidirectional overvoltage/overcurrent protection between battery pack and system bus in ultrabooks. IC Role / Device Role / Timing Role: High-side load switch controlling main power rail with fast fault response and low quiescent loss. Use Value: 7.2 mΩ RDS(ON) limits voltage drop to <150 mV at 20A, preserving battery runtime and enabling accurate coulomb counting. |
Use Scenario: 20V/5A USB-C PD 3.0 power path management in docking stations and portable monitors. IC Role / Device Role / Timing Role: Low-loss, logic-controlled power gate with fast turn-on (<10 ns delay) for dynamic port negotiation. Use Value: 4.5V gate drive compatibility allows direct MCU control; 14.9 ns fall time prevents shoot-through during hot-plug transitions. |
| Industrial 48V DC-DC Converter High-Side Switch | Automotive Body Control Module Load Driver |
|
Use Scenario: Primary-side synchronous rectifier in isolated 48V-to-12V buck converters for telecom and server PSUs. IC Role / Device Role / Timing Role: High-efficiency, high-voltage switching element with low Coss and fast recovery for 300–500 kHz operation. Use Value: 536 pF Coss and 13.7 pF Crss minimize switching loss and EMI; 66 mJ EAS withstands transformer leakage spikes. |
Use Scenario: 12V/24V load switching for LED lighting, window lift motors, and HVAC actuators in BCMs. IC Role / Device Role / Timing Role: AEC-Q101-qualified discrete power switch with integrated diagnostics via VGS(TH) stability across -55°C to +150°C. Use Value: Gate threshold variation ≤ ±0.3 V over full temp range ensures reliable turn-on at cold cranking; 100% UIS test meets ISO 7637-2 pulse 5a immunity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT10H009LQ-7 | Same die, QFN-8 (3×3 mm) but non-exposed pad; RθJA = 72 °C/W vs. 59 °C/W for LCG-7 | Limited to lower ambient/power conditions due to higher thermal resistance; no direct thermal pad attachment | Select when board-level thermal management is constrained and peak power <15W is acceptable. |
| DMTH10H009LPS-13 | Same RDS(ON) spec but in PowerDI5060-8 package; RθJC = 3.0 °C/W, higher ID = 60A @ TC | Better thermal performance and higher current rating, but larger 5.0×6.0 mm footprint and higher Ciss (2700 pF) | Choose for higher-power (>40A) industrial loads where PCB space permits and faster switching is secondary. |
Compared with DMT10H009LQ-7, the DMT10H009LCG-7 offers superior thermal performance via its exposed pad, enabling 2.5× higher continuous power in the same footprint; versus DMTH10H009LPS-13, it trades 1.2 °C/W lower RθJC for 1.7 mm² smaller area and 400 pF lower input capacitance-ideal for space-constrained, high-frequency designs.
Availability
DMT10H009LCG-7 is available at Aetrix Electronics and suitable for notebook battery management, USB-C power delivery load switching, and industrial 48V DC-DC converter designs requiring stable component supply, long-term lifecycle support, and traceable green sourcing.
Supply support for DMT10H009LCG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
The DMT10H009LCG-7 belongs to Diodes' high-voltage, low-RDS(ON) PowerMOS™ family, engineered specifically for high-efficiency power switching in portable, industrial, and automotive applications demanding compact size and thermal reliability.
FAQ
What is the maximum safe operating junction temperature for DMT10H009LCG-7?
The absolute maximum junction temperature is +150°C per the datasheet's TJ, TSTG specification. Operation at this limit requires strict thermal design: RθJA must be ≤59 °C/W with 1-inch² copper pad, and transient power must stay within SOA curves (Figure 12). For reliable long-term use, keep TJ ≤125°C under steady-state conditions.
Does DMT10H009LCG-7 support 3.3V logic-level gate drive?
Yes-its gate threshold voltage VGS(TH) ranges from 1.1 V to 2.5 V, and RDS(ON) is specified at VGS = 4.5 V (12.9 mΩ max). At 3.3V, typical RDS(ON) is ~18 mΩ (per Figure 5 extrapolation), sufficient for ≤15A loads with acceptable conduction loss in battery-powered systems.
Is DMT10H009LCG-7 qualified for automotive applications?
While not pre-qualified to AEC-Q101, Diodes states that "for automotive applications requiring specific change control… please contact us or your local representative." The device shares process and test flow with AEC-Q101-qualified variants (e.g., DMT10H009LQ-7Q), and its -55°C to +150°C operating range, 100% UIS testing, and green material set align with automotive requirements.
How does the V-DFN3333-8 (Type B) package differ from standard DFN-8?
The V-DFN3333-8 (Type B) uses a dual-row pin arrangement: four drain (D), three source (S), and one gate (G) terminal, with an exposed thermal pad centered beneath the die. Unlike single-row DFN-8 packages, this layout reduces source inductance and improves current sharing-critical for high-di/dt switching-and enables direct thermal coupling to inner-layer copper planes.
DMT10H009LCG-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.4A (Ta), 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20.2 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2309 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- V-DFN3333-8 (Type B)
DMT10H009LCG-7 FAQ
1.How can I place an order for DMT10H009LCG-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT10H009LCG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT10H009LCG-7 reliable?
The price and inventory of DMT10H009LCG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H009LCG-7 is usually 5 days.
3.What payment methods are accepted for DMT10H009LCG-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H009LCG-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT10H009LCG-7?
DMT10H009LCG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT10H009LCG-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT10H009LCG-7?
For technical support, including DMT10H009LCG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H009LCG-7 requirements.
6.How does Aetrix verify that DMT10H009LCG-7 is sourced from the original manufacturer or authorized distributors?
All DMT10H009LCG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H009LCG-7 meets industry standards.
7.What is the process for return or replacement of DMT10H009LCG-7?
All DMT10H009LCG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H009LCG-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT10H009LCG-7 part is unused and in its original packaging.
Return procedure for DMT10H009LCG-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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