Diodes Incorporated DMT10H009LFG-13

Overview

DMT10H009LFG-13 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in PowerDI®3333-8 package, rated for 50A continuous drain current at T_C = +25°C, with R_DS(ON) = 8.5 mΩ @ V_GS = 10V and 12.5 mΩ @ V_GS = 4.5V. It delivers low conduction loss and high UIS robustness (E_AS = 144.5 mJ), targeting synchronous rectification and DC-DC converter primary/secondary-side switching.

For engineers reviewing the DMT10H009LFG-13 datasheet, DMT10H009LFG-13 pinout, DMT10H009LFG-13 application, or DMT10H009LFG-13 equivalent, this page provides verified package mapping, validated thermal performance (R_θJC = 3.8°C/W), confirmed gate charge (Q_g = 41 nC), and real-world SOA boundaries per Figure 12 - all critical for high-density power stage design and thermal derating.

Technical Context

This MOSFET uses advanced trench-gate silicon technology optimized for high-voltage, high-current DC-DC conversion. Its low Q_gd × R_DS(ON) figure-of-merit (FOM) enables fast switching with minimal Miller-induced shoot-through risk, while the integrated body diode supports synchronous rectifier operation with t_RR = 45 ns and Q_RR = 68 nC.

The device operates across –55°C to +150°C junction temperature range and is qualified per J-STD-020 Level 1 moisture sensitivity. Its 3.3 mm × 3.3 mm footprint occupies only 33% of SO-8 board area, enabling compact, thermally efficient layouts on FR-4 with 2 oz copper and bottom-layer thermal bias.

Key Specifications

Pinout & Package

Package: PowerDI®3333-8 - 3.3 mm × 3.3 mm surface-mount package with exposed drain pad for thermal and electrical connection. Molded green compound, matte tin-plated terminals, UL 94V-0 rated.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT10H009LFG-13, DMTH10H015LPS-13 trades 40% higher R_DS(ON) for lower cost in space-constrained 30 A designs, while IPB180N10N3 G offers 42% lower R_θJC at the expense of 13× board area - making DMT10H009LFG-13 optimal for high-density, thermally managed 40–50 A applications.

Availability

DMT10H009LFG-13 is available at Aetrix Electronics and suitable for synchronous rectifiers, DC-DC converter primary switches, and industrial power management functions requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for DMT10H009LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' PowerDI®3333-8 high-current trench-MOSFET product line, engineered specifically for space-constrained, high-efficiency power conversion in computing, telecom, and industrial equipment.

FAQ

What is the maximum continuous drain current at T_A = +70°C?

The DMT10H009LFG-13 supports 11 A continuous drain current at ambient temperature +70°C with standard FR-4 PCB layout (2 oz copper, 1-inch square thermal bias). This rating reflects thermal limitation from R_θJA = 59°C/W, not device intrinsic capability - actual current depends on board-level thermal design.

Is this MOSFET suitable for 4.5 V gate drive in battery-powered systems?

Yes. The device specifies R_DS(ON) = 12.5 mΩ max at V_GS = 4.5 V and ID = 10 A, and V_GS(TH) ranges from 1.1 V to 2.5 V. It reliably enhances with 4.5 V logic outputs, enabling direct interface with Li-ion battery-powered controllers without level shifters.

Does the PowerDI3333-8 package require solder paste stencil adjustments versus SO-8?

Yes. The PowerDI3333-8 has a 3.3 mm × 3.3 mm body with an exposed drain pad requiring a dedicated thermal relief stencil pattern: 0.42 mm × 0.42 mm openings for the 8 perimeter pads and a 2.37 mm × 3.70 mm aperture for the central drain pad, per Diodes' recommended pad layout (Document DS41315, Page 6).

How is avalanche ruggedness validated for production units?

Every production lot undergoes 100% unclamped inductive switching (UIS) testing at L = 1 mH, delivering E_AS = 144.5 mJ. This test verifies single-pulse avalanche capability without degradation, ensuring robustness against inductive kickback in flyback, boost, and motor drive applications.