Diodes Incorporated DMT10H009LFG-7

Overview

DMT10H009LFG from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in PowerDI®3333-8 package, optimized for high-efficiency DC-DC converters and synchronous rectification. It delivers 8.5 mΩ R_DS(ON) at V_GS = 10 V, 50 A continuous drain current at T_C = +25°C, and 100% production-tested UIS robustness. Its low Q_gd × R_DS(ON) figure of merit supports fast switching with minimal conduction loss in compact power stages.

For engineers reviewing the DMT10H009LFG datasheet, DMT10H009LFG pinout, DMT10H009LFG application, or DMT10H009LFG equivalent, this page provides verified package mapping, thermal resistance data (R_θJC = 3.8°C/W), gate charge profile (Q_g = 41 nC), diode forward voltage (V_SD = 0.8–1.2 V), and junction temperature derating curves up to +150°C.

Technical Context

This MOSFET employs advanced trench-gate silicon technology to simultaneously reduce R_DS(ON) and gate-drain charge (Q_gd = 9.3 nC), enabling high-frequency operation in buck converters and OR-ing circuits. Its 3.3 mm × 3.3 mm footprint occupies only 33% of SO-8 board area while maintaining 30 W power dissipation capability at T_C = +25°C.

The device features a fully rated body diode with 25 A continuous forward current and 45 ns reverse recovery time (t_RR), validated under 100 A/µs di/dt conditions. Thermal design is supported by transient thermal resistance curves (R_θJC(t)) and normalized R_DS(ON) vs. junction temperature data across –55°C to +150°C.

Key Specifications

Pinout & Package

Package: PowerDI®3333-8 - 3.3 mm × 3.3 mm surface-mount thermally enhanced plastic package with exposed drain pad for low-inductance, high-current routing and efficient heat transfer to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with DMT10H009LFG, DMTH10H015LPS-13 trades board area for superior thermal margin, while SiR626DP-T1-GE3 prioritizes conduction loss over switching loss and ruggedness - making DMT10H009LFG optimal for space-constrained, high-reliability 48–100 V DC-DC systems requiring both efficiency and fault tolerance.

Availability

DMT10H009LFG is available at Aetrix Electronics and suitable for server voltage regulator modules, USB-C power delivery adapters, and industrial motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable green-sourcing compliance.

Supply support for DMT10H009LFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

This part belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-density power conversion in DC-DC, synchronous rectification, and load switching applications where thermal performance and ruggedness are critical.

FAQ

What is the maximum continuous drain current at T_A = +70°C?

The DMT10H009LFG supports 11 A continuous drain current at ambient temperature +70°C when mounted on an FR-4 PCB with 2 oz copper and thermal bias to a 1-inch square copper plate. This rating reflects real-world board-level thermal limitations, not idealized heatsink conditions.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is recommended to dampen ringing and limit peak gate current during switching. With Q_g = 41 nC and typical gate driver rise/fall times, a 2.2 Ω to 10 Ω resistor balances switching speed and EMI control - values confirmed by Diodes' application note AN-7001 for PowerDI3333-8 layout guidelines.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes - the body diode is characterized with t_RR = 45 ns and Q_RR = 68 nC at I_F = 13 A and di/dt = 100 A/µs. These values are measured and guaranteed per datasheet Figure 9 and Table 1, enabling predictable timing in synchronous rectifier control loops.

Can DMT10H009LFG be used in automotive applications?

While DMT10H009LFG itself is not AEC-Q101 qualified, Diodes offers automotive-grade variants (e.g., DMT10H009LFGQ-7) with PPAP documentation, IATF 16949 manufacturing, and extended temperature validation. For non-automotive use, its –55°C to +150°C operating range supports under-hood industrial environments.