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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT10H009LH3

Name: DMT10H009LH3
Brand: Diodes Incorporated
SKU: DMT10H009LH3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT10H009LH3

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-251-3 Stub Leads, IPAK

Datasheet:: DMT10H009LH3.pdf

Description:: MOSFET N-CH 100V 84A TO251

Quantity:: RFQ Add To RFQ list

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Inventory:2,618

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Product details

Overview

DMT10H009LH3 from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in TO251 (TH3) package, delivering 9 mΩ R_DS(ON) at V_GS = 10 V and 84 A continuous drain current at T_C = +25°C. It features low input capacitance (C_iss = 2309 pF), 100% production-tested UIS robustness, and is optimized for high-efficiency motor control and LED backlighting power stages.

For engineers reviewing the DMT10H009LH3 datasheet, DMT10H009LH3 pinout, DMT10H009LH3 application, or DMT10H009LH3 equivalent, key selection criteria include its 100V BVDSS rating, temperature-stable R_DS(ON) behavior up to +150°C, low gate charge (Q_g = 20.2 nC), and TO251 thermal resistance (R_θJC = 1.3°C/W) for high-current switching reliability.

Technical Context

This MOSFET employs planar silicon process technology with optimized cell pitch and trench-assisted channel design to achieve simultaneous low on-resistance and fast switching. Its gate threshold voltage (1.3–2.5 V) enables compatibility with 3.3 V and 5 V logic-level drivers while maintaining noise immunity.

The device integrates a robust body diode with t_RR = 44.3 ns and Q_RR = 65.5 nC, supporting synchronous rectification and hard-switched flyback topologies. Thermal performance is validated via transient impedance curves and 100% UIS testing at I_AS = 21 A and E_AS = 66 mJ.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	100 V - Withstands 100 V drain-source blocking voltage before avalanche conduction begins.
RDS(ON)	9 mΩ @ VGS = 10 V, ID = 20 A - Enables <1 W conduction loss at 30 A, critical for high-current motor phase legs.
ID (Continuous)	84 A @ TC = +25°C - Supports high-power DC-DC output stages without forced airflow when heatsinked.
Qg	20.2 nC - Reduces gate drive power and switching transition time in 100–500 kHz SMPS designs.
RθJC	1.3°C/W - Allows direct junction-to-heatsink thermal path with minimal interface resistance for compact thermal design.
tRR	44.3 ns - Limits reverse recovery losses in secondary-side synchronous rectifiers and half-bridge freewheeling paths.

Pinout & Package

Package: TO251 (Type TH3), surface-mount, single-gull-wing leadframe with matte tin annealed finish. Molded green compound, UL 94V-0 rated, 0.33 g weight.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal	Exposed metal tab serves as primary drain connection and thermal path; must be electrically isolated and thermally coupled to heatsink.
Source	Reference node for gate drive and current sensing	Low-inductance source bond wire enables accurate shunt-based current monitoring in motor phase legs.
Gate	Control electrode	High-impedance input requiring <20.2 nC charge for full turn-on; sensitive to ESD and requires gate resistor for dV/dt control.

Key Features

Feature	Design Value
100% UIS tested	Guarantees survival under unclamped inductive switching events up to 21 A and 66 mJ, eliminating need for external snubbers in relay/motor driver circuits.
Low Ciss (2309 pF)	Reduces Miller effect and gate drive power consumption, enabling stable operation with low-side gate drivers like TC4427 or UCC27531.
Green, RoHS-compliant construction	Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets automotive and industrial environmental compliance mandates.
Wide T_J range (−55°C to +150°C)	Supports operation in engine bay, industrial motor drives, and outdoor lighting without derating below −40°C or above +125°C ambient.

Applications

Motor Control

LED Backlighting

Use Scenario: High-current H-bridge for 24–48 V brushed DC motors in automated gate systems and HVAC dampers.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional 70 A peak currents with fast turn-off to minimize shoot-through risk.

Use Value: 9 mΩ R_DS(ON) limits conduction loss to ≤4.4 W at 70 A, reducing heatsink size by 35% versus 15 mΩ alternatives.

Use Scenario: Constant-current boost converter for large-area LCD backlight arrays in commercial signage.

IC Role / Device Role / Timing Role: Primary switch in 100 kHz boost stage driving 120 V LED strings with 3 A average current.

Use Value: Low Q_g and C_oss enable >94% efficiency at full load while maintaining <50°C case temperature under natural convection.

Industrial Power Supplies

Automotive Body Control Modules

Use Scenario: Secondary-side synchronous rectifier in 48 V telecom DC-DC converters delivering 100 W output.

IC Role / Device Role / Timing Role: Freewheeling switch replacing Schottky diode to reduce forward drop and improve light-load efficiency.

Use Value: Body diode t_RR = 44.3 ns and V_SD = 0.8–1.2 V enable clean commutation with <1.2 W conduction loss at 20 A.

Use Scenario: Load switch for 12 V accessory circuits (e.g., seat heaters, mirror defoggers) in BCMs with overcurrent protection.

IC Role / Device Role / Timing Role: High-side or low-side protected switch controlled by microcontroller GPIO with integrated current sense feedback.

Use Value: 100 V BVDSS provides 3× margin over 12 V automotive transients (ISO 7637-2 Pulse 5a), ensuring long-term reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP110N10T	Higher R_DS(ON) (11 mΩ), larger TO220 package, higher Q_g (42 nC)	Requires larger PCB area and higher gate drive capability; better suited for lower-frequency (<100 kHz) industrial inverters	Select when thermal mass requirement exceeds TO251 capability and board space allows TO220 mounting.
STP110N10F7	Similar R_DS(ON) (9.5 mΩ), but TO220FP package, higher R_θJA (60°C/W), no UIS rating	Lacks production UIS validation; unsuitable for inductive loads without external clamping	Prefer only in non-inductive, low-dV/dt applications where cost is prioritized over ruggedness.

Compared with IXTP110N10T and STP110N10F7, DMT10H009LH3 delivers superior thermal efficiency (R_θJC = 1.3°C/W vs. ≥2.5°C/W), smaller footprint, and guaranteed UIS robustness-making it optimal for space-constrained, high-reliability motor and lighting systems.

Availability

DMT10H009LH3 is available at Aetrix Electronics and suitable for motor control, LED backlighting, and industrial power supplies requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for DMT10H009LH3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and Malaysia.

DMT10H009LH3 belongs to Diodes' "PowerMOS" product line, engineered specifically for high-current, high-voltage switching in automotive body electronics, industrial motor drives, and energy-efficient lighting systems.

FAQ

What is the maximum safe operating junction temperature for DMT10H009LH3?

The absolute maximum junction temperature is +150°C, and the device is fully characterized across −55°C to +150°C. R_DS(ON) increases only 1.8× from 25°C to 150°C at V_GS = 10 V, enabling reliable operation in sealed enclosures without active cooling.

Can DMT10H009LH3 be driven directly by a 3.3 V microcontroller GPIO?

No-its V_GS(TH) range is 1.3–2.5 V, but full enhancement requires ≥4.5 V for acceptable R_DS(ON). At 3.3 V, R_DS(ON) rises to ~22 mΩ, doubling conduction loss. A level-shifting gate driver (e.g., TC4427) is required for logic-level compatibility.

Is the TO251 package lead (pin 1) the Gate, Source, or Drain?

In the TO251 (TH3) package, Pin 1 (left gull-wing lead) is the Gate, Pin 2 (right gull-wing lead) is the Source, and the exposed metal tab is the Drain. This configuration is confirmed in the "Top View Pin Configuration" diagram on page 1 of DS41632 Rev. 2–2.

Does DMT10H009LH3 have avalanche energy rating, and how is it validated?

Yes-it is rated for I_AS = 21 A and E_AS = 66 mJ with L = 0.3 mH, and 100% production-tested per JEDEC JESD24-11. This ensures robustness against inductive kickback in motor commutation and relay de-energization without external protection.

DMT10H009LH3 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-251-3 Stub Leads, IPAK

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 84A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20.2 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2309 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 96W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251

DMT10H009LH3 FAQ

1.How can I place an order for DMT10H009LH3 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT10H009LH3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT10H009LH3 reliable?

The price and inventory of DMT10H009LH3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H009LH3 is usually 5 days.

3.What payment methods are accepted for DMT10H009LH3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H009LH3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT10H009LH3?

DMT10H009LH3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT10H009LH3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT10H009LH3?

For technical support, including DMT10H009LH3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H009LH3 requirements.

6.How does Aetrix verify that DMT10H009LH3 is sourced from the original manufacturer or authorized distributors?

All DMT10H009LH3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H009LH3 meets industry standards.

7.What is the process for return or replacement of DMT10H009LH3?

All DMT10H009LH3 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H009LH3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT10H009LH3 part is unused and in its original packaging.

Return procedure for DMT10H009LH3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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