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Diodes Incorporated DMT10H009LSS-13
- Part No.:
- DMT10H009LSS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMT10H009LSS-13.pdf
- Description:
- MOSFET N-CH 100V 13A/48A 8SO T&R
- Quantity:
- Payment:
- Shipping:
Inventory:7,346
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Product details
Overview
DMT10H009LSS from Diodes Incorporated is a 100V N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-efficiency power conversion with RDS(ON) = 9 mΩ @ VGS = 10 V, 13 A continuous drain current at TA = +25°C, and fast switching performance. It serves as a primary or synchronous rectifier switch in DC-DC converters operating up to 1 MHz.
For engineers reviewing the DMT10H009LSS datasheet, DMT10H009LSS pinout, DMT10H009LSS application, or DMT10H009LSS equivalent, key selection criteria include its low RDS(ON) at 4.5 V gate drive (13.8 mΩ), 100% UIS-tested ruggedness, SO-8 thermal performance (RθJA = 50 °C/W on 1-in² copper), and body diode recovery time (tRR = 44.3 ns).
Technical Context
This MOSFET employs planar trench-gate technology to balance low conduction loss and fast switching speed. Its gate threshold voltage (1.3–2.5 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while its low Ciss (2309 pF) and Qg (40.2 nC at VGS = 10 V) support high-frequency operation in buck, boost, and synchronous rectifier topologies.
The device integrates a robust intrinsic body diode with tRR = 44.3 ns and QRR = 65.5 nC, enabling efficient reverse recovery in hard-switched and resonant converters. Thermal design is supported by RθJC = 4 °C/W and validated 100% unclamped inductive switching (UIS) testing per production lot.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100 V drain-source blocking voltage in off-state, suitable for 48 V input bus systems. |
| RDS(ON) | 9 mΩ @ VGS = 10 V - Enables ≤1.3 W conduction loss at 13 A, critical for high-current point-of-load regulation. |
| ID (continuous) | 13 A @ TA = +25°C - Supports high-current output stages without forced airflow or heatsinking on standard FR-4 PCBs. |
| Ciss | 2309 pF @ VDS = 50 V - Low input capacitance reduces gate drive power and improves switching efficiency above 500 kHz. |
| tRR | 44.3 ns - Fast body diode recovery minimizes shoot-through risk and switching loss in synchronous rectification. |
| EAS | 66 mJ - Confirmed avalanche energy rating ensures robustness against transient overvoltage events in inductive loads. |
| RθJC | 4 °C/W - Enables direct thermal coupling to heatsink via exposed drain pads in SO-8, supporting >30 W dissipation with external cooling. |
Pinout & Package
Package: SO-8 (Surface-mount, 8-pin, dual-gull-wing lead form, 1.27 mm pitch, RoHS-compliant matte tin finish). Exposed drain pad thermally connects pins 1, 2, 3, 4, 5, 6, 7, and 8 internally to enhance heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–4, 6–8 (Drain) | Main current-carrying terminal (connected to internal die drain) | All eight pins except Gate and Source are tied to drain; provides low-inductance, high-current path and thermal conduction to PCB copper. |
| 5 (Gate) | Control electrode for channel formation | High-impedance input requiring <40.2 nC total charge for full turn-on; compatible with standard PWM controllers. |
| Source | Reference node for gate drive and current return path | Internally connected to pin 5's source bond wire; must be routed with low-inductance layout to minimize switching oscillation. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5 V | 13.8 mΩ - Enables use with 3.3 V/5 V microcontroller GPIO or logic-level gate drivers without level-shifting. |
| 100% UIS tested | 21 A IAS, 66 mJ EAS - Guarantees ruggedness against inductive kickback in motor drives and solenoid control. |
| Green compound packaging | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Meets strict halogen-free requirements for automotive and industrial end equipment. |
| Fast body diode | tRR = 44.3 ns, QRR = 65.5 nC - Reduces reverse recovery loss and EMI in synchronous rectifiers and LLC resonant converters. |
| Thermal performance | RθJC = 4 °C/W - Allows direct mounting to heatsink or large copper pour, supporting >40 W pulsed power handling. |
Applications
| Server VRM Power Stage | Automotive DC-DC Converter |
|---|---|
|
Use Scenario: High-current, high-frequency buck converter supplying core voltage to Xeon or AMD EPYC processors. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 500–1000 kHz with 13 A continuous load. Use Value: 9 mΩ RDS(ON) limits conduction loss to <1.5 W at full load, while low Qg enables clean 10 ns rise/fall times under 3.3 V gate drive. |
Use Scenario: 12 V to 5 V/3.3 V step-down converter in ADAS camera module or infotainment head unit. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side of isolated flyback or non-isolated buck regulator. Use Value: 44.3 ns tRR prevents cross-conduction loss during dead-time, improving efficiency by ≥1.2% vs. standard MOSFETs at 250 kHz. |
| Industrial PoE++ PSE | Telecom Base Station PSU |
|
Use Scenario: 90 W Power Sourcing Equipment (PoE++) switch implementing IEEE 802.3bt Type 4 classification and detection. IC Role / Device Role / Timing Role: Current-limiting pass switch in 57 V power path with integrated hot-swap and fault protection. Use Value: 100 V VDSS and 100% UIS qualification ensure reliable operation during cable surge events and short-circuit recovery. |
Use Scenario: Intermediate bus converter (48 V to 12 V) feeding distributed power architecture in macro-cell base stations. IC Role / Device Role / Timing Role: High-side switch in interleaved two-phase buck topology running at 300 kHz. Use Value: SO-8 package with RθJA = 50 °C/W on 1-in² copper sustains 13 A continuous current without derating at 70°C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH10H009LPS-13 | Same die, PQFN 5×6 mm package with enhanced thermal performance (RθJA = 30 °C/W), no leadframe plating. | Better suited for high-power density designs where board space allows PQFN footprint and thermal vias. | Select when junction temperature must stay below 125°C at >15 A continuous current; not drop-in for SO-8 footprints. |
| IPB113N10N3 G | 100 V, 113 A rated part in TO-263; RDS(ON) = 6.8 mΩ @ 10 V but higher Qg (72 nC) and larger footprint. | Targeted at high-current industrial inverters, not compact DC-DC modules. | Choose only if system requires >30 A peak current and can accommodate TO-263 thermal mass and layout area. |
Compared with DMTH10H009LPS-13 and IPB113N10N3 G, DMT10H009LSS uniquely balances SO-8 manufacturability, 13 A capability, and 4.5 V logic-level drive-making it optimal for space-constrained, mid-power DC-DC converters where thermal budget and gate drive simplicity are prioritized over maximum current rating.
Availability
DMT10H009LSS is available at Aetrix Electronics and suitable for server VRM power stages, automotive DC-DC converters, and industrial PoE++ PSE applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for DMT10H009LSS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, high-reliability power conversion in computing, automotive, and industrial infrastructure-emphasizing low RDS(ON), fast switching, and ruggedness under real-world stress conditions.
FAQ
What is the maximum continuous drain current at 70°C ambient temperature?
The DMT10H009LSS supports 10 A continuous drain current at TA = +70°C when mounted on an FR-4 PCB with 2 oz copper and minimum recommended pad layout. This rating reflects thermal derating due to increased RθJA at elevated ambient, not device degradation.
Does this MOSFET require a gate resistor for stability in high-frequency switching?
Yes-a 3 Ω gate resistor is used in the datasheet's switching time test (tD(ON), tR, etc.) to suppress ringing and control dV/dt. For 500–1000 kHz operation, a 2–5 Ω non-inductive resistor between driver output and pin 5 is recommended to dampen parasitic oscillation without compromising turn-on speed.
Is the body diode suitable for synchronous rectification without external Schottky replacement?
Yes-the intrinsic body diode has tRR = 44.3 ns and QRR = 65.5 nC, verified across -55°C to +150°C. In buck converters operating ≤300 kHz with proper dead-time control, it delivers >92% efficiency without external diode, reducing BOM count and layout area.
Can DMT10H009LSS be used in automotive applications per AEC-Q101?
No-this specific part number is not AEC-Q101 qualified. Diodes offers automotive-grade variants (e.g., DMT10H009LSSQ) with PPAP documentation, IATF 16949 manufacturing, and extended temperature validation. Standard DMT10H009LSS is intended for commercial/industrial use only.
DMT10H009LSS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Ta), 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 40.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2309 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMT10H009LSS-13 FAQ
1.How can I place an order for DMT10H009LSS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT10H009LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT10H009LSS-13 reliable?
The price and inventory of DMT10H009LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT10H009LSS-13 is usually 5 days.
3.What payment methods are accepted for DMT10H009LSS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT10H009LSS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT10H009LSS-13?
DMT10H009LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT10H009LSS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT10H009LSS-13?
For technical support, including DMT10H009LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT10H009LSS-13 requirements.
6.How does Aetrix verify that DMT10H009LSS-13 is sourced from the original manufacturer or authorized distributors?
All DMT10H009LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT10H009LSS-13 meets industry standards.
7.What is the process for return or replacement of DMT10H009LSS-13?
All DMT10H009LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT10H009LSS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT10H009LSS-13 part is unused and in its original packaging.
Return procedure for DMT10H009LSS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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